专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

GB2163902B FIELD EFFECT TRANSISTOR-TYPE MOISTURE SENSOR 未知
公开(公告)号：GB2163902B
公开(公告)日：1988-06-08
申请号：GB8521432
申请日：1985-08-28
申请人： SHARP KK
发明人： INAMI YASUHIKO , WATANABE MASANORI , HIJIKIGAWA MASAYA
IPC分类号： G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , H01L29/62 , H01L29/78
摘要： A field effect transistor-type moisture sensor comprising a field effect transistor device incorporated with a moisture sensitive means, the electrostatic capacity or the electrical conductivity of which varies with the absorption and the desorption of water vapor or moisture, wherein said moisture sensitive means is disposed on a gate insulating film of said field effect transistor device to form an electrode structure, said moisture sensitive means being a film prepared by cross-linking cellulose acetate butyrate with at least one selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxylic acid groups; and acid anhydrides of carboxylic acids.

63. 发明专利

NL8502478A 未知
公开(公告)号：NL8502478A
公开(公告)日：1987-04-01
申请号：NL8502478
申请日：1985-09-11
申请人： PHILIPS NV
IPC分类号： H01L21/768 , H01L21/31 , H01L21/339 , H01L29/52 , H01L29/54 , H01L29/60 , H01L29/62 , H01L29/76
摘要： A method of manufacturing a three-layer electrode system, more particularly for use in CCD image sensors. A group of first electrodes (4A,B,C) is formed on a gate oxide layer (3) from a first silicon layer (4). After etching away the exposed gate oxide, a first thermal oxidation is carried out. Subsequently, an anti-oxidation layer (6) of, for example, silicon nitride is provided, on which a second silicon layer (7) is provided, from which a group of second electrodes (7A,B) is formed, which overlap the first electrodes in part, whereupon they are subjected to a second thermal oxidation. The exposed part of the anti-oxidation layer (6) is removed by anisotropic plasma etching except parts (6A) on the edge of the first electrodes and under projecting oxide edges. After a third thermal oxidation, a third silicon layer (9) is provided, from which a third group of electrodes (9A,B) is formed, which overlap the first and second electrodes. The thermal oxidations are carried out in such a manner that the dielectric thickness is the same under all electrodes.

64. 发明专利

DE3628399A1 未知
公开(公告)号：DE3628399A1
公开(公告)日：1987-03-05
申请号：DE3628399
申请日：1986-08-21
申请人： RCA CORP
发明人： KAGANOWICZ GRZEGORZ , ROBINSON JOHN WALTER , IPRI ALFRED CHARLES
IPC分类号： H01L21/316 , C23C14/02 , C23C14/08 , H01L21/28 , H01L29/51 , H01L21/285 , H01L29/62 , H01L29/78
摘要： Silicon (44) is oxidized in an oxygen-containing ambient to form a first region (48) of silicon oxide. Once oxidation has begun, reactive sputtering of aluminum in an oxygen plasma is initiated. This forms a second region (50) of said dielectric film which comprises a mixture of silicon and aluminum oxides. A third region (52) comprising substantially aluminum oxide is formed by the continuing reactive sputtering step. In making a MOSFET device, for instance, a metal electrode layer (54) may be deposited over the third region (52), and source and drain regions (56, 58) may be formed in the silicon (44) provided as a layer formed on a substrate (42) such as of glass. A semiconductor device comprising said three region dielectric film interposed between an electrode and a semiconductor body has little or no shift in threshold voltage, providing good stability, and can be fabricated in substantially less time and/or at lower temperatures than prior art methods.

65. 发明专利

AU555820B2 SELECTIVELY RESPONSIBLE FIELD EFFECT DEVICES 未知
公开(公告)号：AU555820B2
公开(公告)日：1986-10-09
申请号：AU8860282
申请日：1982-09-22
申请人： CRITIKON INC
发明人： BLACKBURN GARY FIFE
IPC分类号： H01L29/80 , G01N27/00 , G01N27/07 , G01N27/30 , G01N27/414 , H01L21/338 , H01L29/78 , H01L29/812 , H01L21/28 , H01L29/62

67. 发明专利

DE3264992D1 LATERAL BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE 未知
公开(公告)号：DE3264992D1
公开(公告)日：1985-09-05
申请号：DE3264992
申请日：1982-03-05
申请人： EFCIS
发明人： MACKOWIAK EUGENE , BOREL JOSEPH , MONTIER MICHEL
IPC分类号： H01L21/331 , H01L29/10 , H01L29/423 , H01L29/73 , H01L29/72 , H01L21/285 , H01L29/60 , H01L29/62

68. 发明专利

AU2993284A OROUS MATERIAL 未知
公开(公告)号：AU2993284A
公开(公告)日：1985-01-03
申请号：AU2993284
申请日：1984-06-27
申请人： STAUFFER CHEMICAL CO
发明人： SCHACHTER ROZALIE , VISCOGLIOSI MARCELLO , BUNZ LEWIS ANDREW
IPC分类号： C30B23/08 , H01L21/203 , H01L21/314 , H01L21/3205 , H01L29/51 , H01L51/05 , C01B25/02 , C01B25/08 , C23C15/00 , H01L29/04 , H01L29/24 , H01L29/46 , H01L29/54 , H01L29/62 , H01L29/86 , H01L29/91
摘要： A process for the production of a semiconducting catenated phosphorus film characterised in that it comprises sputtering a thin film thereof onto a substrate is disclosed. The present process may be applied to the production of semiconductor devices. Referring to the accompanying illustrative drawing, a sputtered film 22 may be used in a sandwich configuration on a glass substrate 24 with a metallic lock contact 26 and metal dot top contacts 28. For example, amorphous and polycrystalline films of KP15 may be formed by RF diode sputtering targets of KP15 and excess phosphorus in an argon phase. Substrate temperatures up to 280-300 DEG C provide amorphous films. Higher temperatures provide microcrystalline or polycristalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10 (ohm-cm) to 10 (ohm-cm) ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals, such as titanium, nickel and aluminium. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sputterred thereon thin film polyphosphides and nickel with nickel and titanium top contacts. The present invention represents an advance over the prior art.

69. 发明专利

GB2092824B A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 未知
公开(公告)号：GB2092824B
公开(公告)日：1984-08-15
申请号：GB8135384
申请日：1981-11-24
申请人： SUWA SEIKOSHA KK
IPC分类号： H01L21/28 , H01L21/321 , H01L29/788 , H01L29/62 , H01L29/78

70. 发明专利

NL8204833A Integrated cct. incorporating printed wiring - has multilayer current injection forming rectifier bridge with interzonal diode junctions 未知
公开(公告)号：NL8204833A
公开(公告)日：1983-04-05
申请号：NL8204833
申请日：1982-12-15
申请人： PHILIPS NV
IPC分类号： H03F3/185 , G11C11/34 , G11C11/411 , G11C11/413 , G11C11/414 , H01L21/331 , H01L21/8226 , H01L27/00 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/082 , H01L27/102 , H01L29/47 , H01L29/72 , H01L29/73 , H01L29/872 , H03F3/04 , H03F3/34 , H03F3/343 , H03F3/347 , H03K3/012 , H03K3/288 , H03K3/289 , H03K19/08 , H03K19/091 , H04R25/00 , H01L29/06 , H01L29/70 , H01L29/52 , H01L29/54 , H01L29/56 , H01L29/60 , H01L29/62 , H01L29/64 , G11C11/40
摘要： The integrated circuit has several transistors arranged near one another on a surface (11) of a semiconductor body (12) and there is an intermediate layer (21) of the first conducting type forming a common zone for several transistors and for each of these there is a second zone (1 to 10), an adjusting zone of the second type bordering the first layer as a rectifying junction (19). These second zones each have a terminal for electrical signals (14), forming part of a pattern of conducting paths, and each acts as the last layer of a three-layered structure (20,21,6) for a current injector or current adjusting source. The structure includes an injecting layer (20) and the intermediate layer (21), separated from the injecting layer by a first rectifying junction (18) and from the last layer by the second rectifying junction (19). The first junction is polarised, to supply the charge carriers to the last layer, in the direction of transmission.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式