专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US2945214A Magnetic storage systems 失效
标题翻译：磁存储系统
公开(公告)号：US2945214A
公开(公告)日：1960-07-12
申请号：US57697256
申请日：1956-04-09
申请人： IBM
发明人： TOM KIBURN , RICHARD HOFFMAN GEORGE
IPC分类号： G11C11/06
CPC分类号： G11C11/06071 , G11C11/06042

62. 发明授权

US2902678A Magnetic switching systems 失效
公开(公告)号：US2902678A
公开(公告)日：1959-09-01
申请号：US60732456
申请日：1956-08-31
申请人： RCA CORP
发明人： KOSONOCKY WALTER F
IPC分类号： G11C11/06
CPC分类号： G11C11/06042

63. 发明申请

US20180068707A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20180068707A1
公开(公告)日：2018-03-08
申请号：US15614714
申请日：2017-06-06
申请人： JoongShik SHIN , Byoungil LEE , Hyunmog PARK , Euntaek JUNG
发明人： JoongShik SHIN , Byoungil LEE , Hyunmog PARK , Euntaek JUNG
IPC分类号： G11C11/408 , G11C11/06 , G11C8/12 , G11C8/08 , H01L21/8239 , H01L23/528
CPC分类号： G11C11/4085 , G11C8/08 , G11C8/12 , G11C8/14 , G11C11/06042 , H01L21/8239 , H01L23/5286 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L27/11582
摘要： A semiconductor memory device includes a substrate, a ground selection line, a word line, an insulating layer, a vertical channel portion, and a first peripheral circuit gate pattern. The substrate includes a cell array region and a peripheral circuit region. The ground selection line is on the cell array region. The word line is on the ground selection line. The insulating layer is between the ground selection line and the word line. The vertical channel portion penetrates the ground selection line, word line, and insulating layer in a direction vertical to a top surface of the substrate. The first peripheral circuit gate pattern is on the peripheral circuit region of the substrate. The insulating layer extends from the cell array region onto the peripheral circuit region to cover a top surface of the first peripheral circuit gate pattern.

64. 发明授权

US5389566A Method of forming a ferromagnetic memory device 失效
标题翻译：形成铁磁存储器件的方法
公开(公告)号：US5389566A
公开(公告)日：1995-02-14
申请号：US218395
申请日：1994-03-28
申请人： Craig S. Lage
发明人： Craig S. Lage
IPC分类号： G11C11/06 , H01L21/70 , H01L27/00
CPC分类号： G11C11/06035 , G11C11/06042
摘要： A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).
摘要翻译：铁磁存储器电路（10）和具有衬底（42）的铁磁存储器件（15）。在基板（42）内形成第一电流电极（44）和第二电流电极（46）。形成控制电极（50）以控制第一和第二电流电极（44和46）之间的电流。铁磁区域（68）用于通过磁通量存储逻辑值。两个导电层（62和70）和导电间隔物（78）形成用于装置（15）的感测导体。感测导体用于外部提供存储在设备（15）中的逻辑值。导电层（82）形成用于改变存储在装置（15）中的逻辑值的编程/擦除线。取决于通过导电层（82）的电流的方向和大小，将逻辑1或逻辑零存储在铁磁区域（68）中。

65. 发明授权

US3593322A Sequential address magnetic memory system 失效
标题翻译：顺序地址磁记录系统
公开(公告)号：US3593322A
公开(公告)日：1971-07-13
申请号：US3593322D
申请日：1968-04-23
申请人： ENGLISH ELECTRIC COMPUTERS LTD
发明人： MORRIS DAVID JOSEPH
IPC分类号： G11C7/02 , G11C11/06 , G11C5/08 , G11C5/02
CPC分类号： G11C11/06042
摘要： This invention relates to a magnetic core store with coincident current selection. In such a store, the readout of successive words in sequential addresses involves the selection of each word in turn. By the present invention, such successive reading out of words in a block is achieved by energizing that selection line which is common to the block continuously, and pulse energizing the other selection lines in succession. Thus, for the first word, noise is produced on the sense lines by both selection lines, but for the remaining words the only noise is that due to the selection lines individual to the successive words being read out. Preferably, the store is arranged so that this latter noise is small compared with the noise produced on normal full selection of a word. A more rapid readout of the block is thereby achieved.

66. 发明授权

US3488637A Looped plated wire magnetic memory 失效
标题翻译：环形电磁记忆体
公开(公告)号：US3488637A
公开(公告)日：1970-01-06
申请号：US3488637D
申请日：1963-12-30
申请人： IBM
发明人： ELFANT ROBERT F , GREBE KURT R
IPC分类号： G11C11/06 , G11B5/00 , H01F7/06
CPC分类号： G11C11/06042 , Y10T29/49069

67. 发明授权

US3478333A Magnetic memory system 失效
标题翻译：磁记忆系统
公开(公告)号：US3478333A
公开(公告)日：1969-11-11
申请号：US3478333D
申请日：1964-02-24
申请人： GEN MOTORS CORP
发明人： FAULKNER ALFRED H
IPC分类号： G11C11/06 , G11B5/12
CPC分类号： G11C11/06042

68. 发明授权

US3462748A Memory using sense amplifiers with gated feedback 失效
标题翻译：使用感应放大器与存储反馈的记忆
公开(公告)号：US3462748A
公开(公告)日：1969-08-19
申请号：US3462748D
申请日：1965-01-28
申请人： BELL TELEPHONE LABOR INC
发明人： KLIBBE ARTHUR W , REGITZ WILLIAM M
IPC分类号： G11C7/02 , G11C11/06 , G11B5/02
CPC分类号： G11C11/06007 , G11C11/06042

69. 发明授权

US3374474A Noise suppression circuit for magnetic core matrix 失效
标题翻译：磁芯矩阵噪声抑制电路
公开(公告)号：US3374474A
公开(公告)日：1968-03-19
申请号：US31099963
申请日：1963-09-24
申请人： BELL TELEPHONE LABOR INC
发明人： CONRATH JULES R
IPC分类号： A62C13/00 , G11C7/02 , G11C11/06
CPC分类号： G11C11/06042 , A62C13/003 , G11C11/06078

70. 发明授权

US3296604A Bi-directional current steering switch 失效
标题翻译：双向电流转向开关
公开(公告)号：US3296604A
公开(公告)日：1967-01-03
申请号：US32023863
申请日：1963-10-30
申请人： PERSCHY JAMES A
发明人： PERSCHY JAMES A
IPC分类号： G11C11/06 , H03K17/81
CPC分类号： H03K17/81 , G11C11/06042

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式