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61. 发明公开

EP2057506A1 A METHOD AND A SYSTEM FOR REDUCING OVERLAY ERRORS WITHIN EXPOSURE FIELDS BY APC CONTROL STRATEGIES 有权
标题翻译：方法和系统减少曝光区域覆盖误差由APC的税务策略
公开(公告)号：EP2057506A1
公开(公告)日：2009-05-13
申请号：EP07801880.1
申请日：2007-08-24
申请人： ADVANCED MICRO DEVICES, INC.
发明人： SELTMANN, Rolf , SCHULZ, Bernd , HEMPEL, Fritjof , SCHULZE, Uwe
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70458 , G03F7/70633 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： By taking into consideration tool specific distortion signatures and reticle specific placement characteristics in an alignment control system the control quality of sophisticated APC strategies may significantly be enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

62. 发明授权

EP1195647B1 Surface position detecting method and scanning exposure method using the same 失效
标题翻译：一种用于使用相同的检测表面的位置和扫描曝光方法的方法
公开(公告)号：EP1195647B1
公开(公告)日：2007-11-28
申请号：EP01204135.6
申请日：1997-02-27
申请人： CANON KABUSHIKI KAISHA
发明人： Iwanaga, Takehiko , Yamada, Yuichi , Uzawa, Shigeyuki
IPC分类号： G03F9/00 , G03F7/20 , G01B11/06 , G01B11/00
CPC分类号： G03F9/7026 , G03F7/70358 , G03F7/70458 , G03F9/7034

63. 发明公开

EP1760531A1 Lithographic method 审中-公开
标题翻译： Lfhografisf Verfahren
公开(公告)号：EP1760531A1
公开(公告)日：2007-03-07
申请号：EP06254621.3
申请日：2006-09-04
申请人： ASML Netherlands B.V.
发明人： Zaal, Koen Jacobus Johannes Maria , de Kort, Antonius Johannes , de Jong, Frederik Eduard , Goorman, Koen , Menchtchikov, Boris , Pen, Hermen Folken
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70341 , G03F7/7045 , G03F7/70458
摘要： In calibration of overlay performance of an immersion lithographic apparatus, two sets of overlay data are obtained from exposures carried out using normal and reversed meanders. The two data sets can then be used to eliminate effects due to wafer cooling.
摘要翻译：在浸没式光刻设备的叠加性能的校准中，从使用正反转曲折进行的曝光获得两组覆盖数据。然后可以使用两个数据集来消除由于晶片冷却引起的影响。

64. 发明授权

EP0793073B1 Surface position detecting method and scanning exposure method using the same 失效
标题翻译：一种用于使用相同的检测表面的位置和扫描曝光方法的方法
公开(公告)号：EP0793073B1
公开(公告)日：2002-12-04
申请号：EP97301291.7
申请日：1997-02-27
申请人： CANON KABUSHIKI KAISHA
发明人： Iwanaga, Takehiko , Yamada, Yuichi , Uzawa, Shigeyuki
IPC分类号： G01B11/00 , G01B11/06 , G03F9/00 , G03F7/20
CPC分类号： G03F9/7026 , G03F7/70358 , G03F7/70458 , G03F9/7034

65. 发明公开

EP0793073A3 Surface position detecting method and scanning exposure method using the same 失效
标题翻译：一种用于使用相同的检测表面的位置和扫描曝光方法的方法
公开(公告)号：EP0793073A3
公开(公告)日：1998-09-30
申请号：EP97301291
申请日：1997-02-27
申请人： CANON KK
发明人： IWANAGA TAKEHIKO , YAMADA YUICHI , UZAWA SHIGEYUKI
IPC分类号： G01B11/03 , G03F7/20 , G03F7/207 , G03F9/00 , G01B11/00
CPC分类号： G03F9/7026 , G03F7/70358 , G03F7/70458 , G03F9/7034
摘要： A surface position detecting method for detecting a surface position of a surface to be examined, having surface height irregularity, while relatively scanning the surface, is disclosed. The method includes detecting characteristic data related to a surface state at plural measurement positions on the surface, while relatively scanning the surface, and processing the detected characteristic data related to the measurement positions to determine a measurement position for measurement of the surface position in a subsequent surface position detecting process.

66. 发明公开

EP0715215A1 Alignment method and semiconductor exposure method 失效
标题翻译： Ausrichtverfahren und Halbleiterbelichtungsverfahren
公开(公告)号：EP0715215A1
公开(公告)日：1996-06-05
申请号：EP95308529.7
申请日：1995-11-28
申请人： CANON KABUSHIKI KAISHA
发明人： Mitome, Noriyuki , Murakami, Eiichi , Uzawa, Shigeyuki
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F9/7084 , G03F7/70458 , G03F9/7003
摘要： Disclosed is an alignment method or an exposure method in an exposure process in which a first stepper having a first reduction magnification and a second stepper having a second reduction magnification, higher than the first reduction magnification, are used in combination. Global alignment of the first stepper is achieved on the basis of a subset of the set of alignment marks defined by the second stepper. The subset comprises alignment marks (60,70) which lie in an annular region between the central and peripheral regions of the wafer (10). The marks occupy a variety of different positions with respect to the exposure field (20) of the first stepper.
摘要翻译：公开了一种曝光处理中的对准方法或曝光方法，其中组合使用具有第一缩小倍率的第一步进器和具有高于第一缩小倍率的第二缩小倍率的第二步进器。基于由第二步进机定义的一组对准标记的子集来实现第一步进机的全局对准。该子集包括位于晶片（10）的中心和周边区域之间的环形区域中的对准标记（60,70）。相对于第一步进机的曝光场（20），标记占据各种不同的位置。

67. 发明公开

EP3153924A1 METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE 有权转让
标题翻译：方法用于确定剂量修正IC制造过程中，通过一个平衡程序
公开(公告)号：EP3153924A1
公开(公告)日：2017-04-12
申请号：EP15306580.0
申请日：2015-10-07
申请人： Aselta Nanographics
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago , BAYLE, Sébastien
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.
摘要翻译：本发明盘松的方法容易地确定矿的第二工艺参数，用于从第一工艺的参数制造。度量代表的两个过程之间的差异从多个参数的值的，可以测量这两个过程在校准布局计算，或可以是确定性从预先存在的值开采布局或基准数据的两个过程通过内插/外插步骤。度量的数量被选择以便做他们的组合给出了在一个设计的所有区域的两个过程之间的差异精确表示。有利的是，所述度量计算为目标设计的卷积的产物和核函数的化合物和变形函数。参考过程的参考物理模型是确定性的开采。的施胶校正将被施加到由参考处理计算所产生的设计的边缘。然后，它被转化，全部或部分，变成了剂量校正。

68. 发明公开

EP2261739A3 Method and apparatus for creating overlapping patterns on a substrate 失效
标题翻译：用于产生在衬底上叠置的结构的方法和装置
公开(公告)号：EP2261739A3
公开(公告)日：2013-01-30
申请号：EP10171096.0
申请日：2007-12-03
申请人： ASML Netherlands B.V.
发明人： Mos, Everhardus , Van Der Schaar, Maurits , Simons, Hubertus
IPC分类号： G03F7/20
CPC分类号： G03F7/70725 , G03F7/70258 , G03F7/70358 , G03F7/70458 , G03F7/70525 , G03F7/70633 , G03F7/70783
摘要： A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, thereby reducing the intra-field overlay errors.

69. 发明授权

EP2028546B1 A method of performing model-based scanner tuning, a computer program and a lithographic apparatus 有权转让
标题翻译：一种用于执行基于模型的扫描器调整，计算机程序和光刻设备的方法
公开(公告)号：EP2028546B1
公开(公告)日：2012-10-03
申请号：EP08252671.6
申请日：2008-08-12
申请人： ASML Netherlands BV
发明人： Ye, Jun , Cao, Yu
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70458 , G03F7/70516 , G03F7/70525
摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

70. 发明公开

EP2028546A3 A method of performing model-based scanner tuning, a computer program and a lithographic apparatus 有权转让
标题翻译：一种用于执行基于模型的扫描器调整，计算机程序和光刻设备的方法
公开(公告)号：EP2028546A3
公开(公告)日：2009-12-09
申请号：EP08252671.6
申请日：2008-08-12
申请人： Brion Technologies, Inc.
发明人： Ye, Jun , Cao, Yu
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70458 , G03F7/70516 , G03F7/70525
摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

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