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61. 发明公开

EP1602444A3 Polishing method 有权
标题翻译：抛光工艺
公开(公告)号：EP1602444A3
公开(公告)日：2005-12-14
申请号：EP05018524.8
申请日：2001-01-29
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Kiuchi, Etsuo Mimasu Semiconductor Ind. Co., Ltd. , Hayashi, Toshiyuki Mimasu Semic. Ind. Co., Ltd.
IPC分类号： B24B37/04 , B24B37/00 , B24B41/06 , B24B49/14 , B24B55/02 , B24B57/02
CPC分类号： B24B55/02 , B24B37/015 , B24B37/042 , B24B37/12 , B24B37/14 , B24B37/30 , B24B41/042 , B24B41/06 , B24B49/14 , B24B57/02
摘要： There are provided a polishing apparatus and a polishing method capable of performing polishing a work (such as a wafer) with high efficiency and high precision, a novel work holding plate effectively holding a work and an adhering method for a work capable of adhering the work on the work holding plate with high precision. The polishing apparatus comprises: a polishing table(29); and a work holding plate(38), wherein a work held on the work holding plate(38) is polished supplying a polishing agent solution(41) in the apparatus, and in polishing action, an amount of deformation of the polishing table(29) in a direction normal to an upper surface thereof with respect to the upper surface thereof and/or an amount of deformation of the work holding plate(38) in a direction normal to a work holding surface thereof is restricted to 100 µm or less by forming the polishing table(29) in one-piece, contriving flow paths of cooling water and others.

62. 发明公开

EP1549465A1 METHODS AND SYSTEMS FOR CONTROLLING BELT SURFACE TEMPERATURE AND SLURRY TEMPERATURE IN LINEAR CHEMICAL MECHANICAL PLANARIZATION 审中-公开
标题翻译：方法和系统，用于控制化学 - 机械LINEARPLANARISIEREN BAND地表温度和浆料温度
公开(公告)号：EP1549465A1
公开(公告)日：2005-07-06
申请号：EP03799354.0
申请日：2003-09-29
申请人： LAM RESEARCH CORPORATION
发明人： WU, Patrick, P., H. , PHAM, Xuyen , NGUYEN, Tuan, A. , ZHOU, Ren
IPC分类号： B24B37/04 , B24B49/14 , B24B21/02 , B24B57/02
CPC分类号： B24B37/015 , B24B21/04 , B24B57/02
摘要： A linear chemical mechanical planarization (CMP) system includes a belt pad (102), a slurry bar (120) having a plurality of nozzles, and a heating module (130) for heating slurry. The heating module (130) has a plurality of heating elements, each of which is coupled in flow communication with one of the plurality of nozzles of the slurry bar. The system also may include a control system (300) for controlling the heating elements of the heating module and first and second temperature sensors coupled to the control system. The first temperature sensors (TC) measure the temperature of slurry heated by each of the heating elements, and the second temperature sensors (320a-320f) measure the temperature of the surface of the belt pad. A method for dispensing slurry in a linear CMP system, and methods for controlling the temperature of the surface of the belt pad and the temperature of slurry in a linear CMP system also are described.

63. 发明公开

EP1197293A1 POLISHING DEVICE AND METHOD 有权
标题翻译： POLIERVERFAHREN UND VORRICHTUNG
公开(公告)号：EP1197293A1
公开(公告)日：2002-04-17
申请号：EP01902662.4
申请日：2001-01-29
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： KIUCHI, Etsuo MIMASU SEMICONDUCTOR IND. CO., LTD. , HAYASHI, Toshiyuki MIMASU SEMIC. IND. CO., LTD.
IPC分类号： B24B37/04 , B24B37/00
CPC分类号： B24B55/02 , B24B37/015 , B24B37/042 , B24B37/12 , B24B37/14 , B24B37/30 , B24B41/042 , B24B41/06 , B24B49/14 , B24B57/02
摘要： There are provided a polishing apparatus and a polishing method capable of performing polishing a work (such as a wafer) with high efficiency and high precision, a novel work holding plate effectively holding a work and an adhering method for a work capable of adhering the work on the work holding plate with high precision. The polishing apparatus comprises: a polishing table(29); and a work holding plate(38), wherein a work held on the work holding plate(38) is polished supplying a polishing agent solution(41) in the apparatus, and in polishing action, an amount of deformation of the polishing table(29) in a direction normal to an upper surface thereof with respect to the upper surface thereof and/or an amount of deformation of the work holding plate(38) in a direction normal to a work holding surface thereof is restricted to 100 µm or less by forming the polishing table(29) in one-piece, contriving flow paths of cooling water and others.
摘要翻译：提供了能够以高效率，高精度进行工件（例如晶片）的研磨的研磨装置和研磨方法，能够有效地保持作业的新型的保持板和能够使工件粘着的工件的粘合方法在工作夹具上高精度。抛光装置包括：抛光台（29）; 以及工件保持板（38），其中在所述设备中抛光保持在所述工件保持板（38）上的工件供给抛光剂溶液（41），并且在抛光动作中，抛光台（29）的变形量）和/或工件保持板（38）在与其工件保持面垂直的方向上的变形量限制在100μm以下通过将抛光台（29）形成为冷却水等一体的，可变的流动路径。

64. 发明授权

EP0916450B1 Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben 有权
公开(公告)号：EP0916450B1
公开(公告)日：2002-01-09
申请号：EP98119004.4
申请日：1998-10-08
申请人： Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft
发明人： Hennhöfer, Heinrich , Krämer, Hans , Kirschner, Helmut , Thurner, Manfred , Buschhardt, Thomas , Röttger, Klaus Dr.
IPC分类号： B24B37/04 , B24B49/14
CPC分类号： B24B37/12 , B24B37/015 , B24B37/042

65. 发明公开

EP0620585A1 Apparatus and method for flattening an insulating layer by etching in a semiconductor device 失效
标题翻译：的装置和方法通过Planarizierung在半导体器件中的蚀刻的绝缘层。
公开(公告)号：EP0620585A1
公开(公告)日：1994-10-19
申请号：EP94103890.3
申请日：1994-03-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Mase, Yasukazu, Intell. Property Division , Abe, Masahiro, Intell. Property Division , Tomita, Ken-ichi, Intell. Property Division , Yahiro, Kazuyuki, Intell. Property Division , Ishiguro, Akira, Intell. Property Division
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/00
CPC分类号： B24B37/015 , H01L21/31053 , H01L21/76819
摘要： An ice layer (26) of an etchant is formed on the upper surface of a surface table (25) by a cooling mechanism (25b), and is kept at a temperature near the freezing point of the etchant. Thereafter, a semiconductor substrate (20) having an insulating layer formed on one surface thereof is fixed on the lower surface of a chuck mechanism (24) such that the other surface of the substrate (20) is in contact with the lower surface. The insulating layer is pressed against the ice layer (26) with a predetermined load. Then, the chuck mechanism (24) is rotated by a second motor in a first direction (27), together with a second shaft (24a), while the surface table (25) is rotated by a first motor in a second direction (28), together with a first shaft (25a). At the same time, the chuck mechanism (24) is slid on the surface table (25), thereby selectively etching the insulating layer.
摘要翻译：的蚀刻剂的冰层（26）由冷却机构（25B）上形成的表面（25）的上表面上，并且被保持在所述蚀刻剂的凝固点附近的温度。有后，具有在绝缘层，形成在其一个表面层的半导体基片（20）被固定的卡盘机构（24）的下表面上检查做的基板（20）与所述下表面相接触的另一面。该绝缘层被压在冰层（26）以预定的负荷。然后，卡盘机构（24）由在第一方向（27）的第二电动机旋转时，与第二轴（24a）的一起，而表面表（25）通过在第二方向上的第一马达旋转（28 ），与第一轴（25A）一起。在在Sametime，卡盘机构（24）上滑动的表面的表（25），从而有选择地蚀刻绝缘层。

66. 发明公开

EP0366027A2 Wafer flood polishing 失效
标题翻译： Polieren von Wafern在einemFlüssigkeitsbad。
公开(公告)号：EP0366027A2
公开(公告)日：1990-05-02
申请号：EP89119566.1
申请日：1989-10-21
申请人： International Business Machines Corporation
发明人： Cote, William J. , Leach, Michael A.
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： H01L21/31053 , B24B37/013 , B24B37/015 , B24B37/04 , B24B37/042 , B24B49/16
摘要： In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 29.4-35.0°C (85°F-95°F). The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.
摘要翻译：在用于平坦化绝缘体（例如氧化硅和氮化硅）的化学机械抛光工艺中，在29.4-35.0℃（85°F-95°F）的温度下使用浆料池。浆料颗粒（例如二氧化硅）具有与要抛光的绝缘体的硬度相当的硬度。在这些条件下，晶片可以更经济地（通过增加焊盘寿命）以高度的均匀度抛光，而不引入局部不完全抛光的区域。

67. 发明授权

EP2474978B1 METHOD AND APPARATUS FOR REPAIRING OPTICAL DISC 有权
标题翻译：方法和设备恢复光盘
公开(公告)号：EP2474978B1
公开(公告)日：2016-12-07
申请号：EP09812508.1
申请日：2009-08-31
申请人： Elm Inc.
发明人： MIYAHARA, Takakazu , MIYAHARA, Terumasa , CHIJIIWA, Kazutoshi
IPC分类号： B24B37/00 , B24B57/02 , G11B23/50
CPC分类号： B24B57/02 , B24B37/015 , B24B37/107 , G11B23/505

68. 发明公开

EP2548696A1 POLISHING APPARATUS, POLISHING PAD, AND POLISHING INFORMATION MANAGEMENT SYSTEM 审中-公开
标题翻译： POLIERVORRICHTUNG，POLIERKISSEN UND SYSTEM ZUR VERWALTUNG VON POLIERINFORMATIONEN
公开(公告)号：EP2548696A1
公开(公告)日：2013-01-23
申请号：EP11755851.0
申请日：2011-03-09
申请人： Nitta Haas Incorporated
发明人： PARK, Jaehong
IPC分类号： B24B37/00 , B24B49/10 , H01L21/304
CPC分类号： B24B37/20 , B24B37/005 , B24B37/015 , B24B49/10
摘要： A polishing pad has structural parts embedded therein; sensors, a memory for storing detected information obtained by the sensors, and a communication unit driven by a power supply unit to communicate with outside in a non-contact manner. The polishing pad and a communication unit configured to communicate with the communication unit of the polishing pad in a non-contact manner constitute a polishing information management system. The polishing pad and a communication unit configured to transmit and receive the information to and from the communication unit of the polishing pad in a non-contact manner constitute a polishing apparatus.
摘要翻译：抛光垫具有嵌入其中的结构部件; 传感器，用于存储由传感器获得的检测信息的存储器，以及由电源单元驱动的通信单元，以便以非接触的方式与外部通信。抛光垫和配置为以非接触方式与抛光垫的通信单元通信的通信单元构成抛光信息管理系统。抛光垫和被配置为以非接触方式向抛光垫的通信单元发送信息和从该通信单元接收信息的通信单元构成抛光装置。

69. 发明授权

EP1238755B1 TABLE OF WAFER POLISHER, METHOD OF POLISHING WAFER, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER 有权
标题翻译：晶片抛光机床工作台，晶片的研磨方法及半导体环过程
公开(公告)号：EP1238755B1
公开(公告)日：2010-11-10
申请号：EP00937244.2
申请日：2000-06-15
申请人： IBIDEN CO., LTD.
发明人： OKUDA, Yuji, Ibiden Co., Ltd , JIMBO, Naoyuki, Ibiden Co., Ltd , MAJIMA, Kazutaka, Ibiden Co., Ltd , TSUJI, Masahiro, Ibiden Co., Ltd , TAKAGI, Hideki, Ibiden Co., Ltd , ISHIKAWA, Shigeharu, Ibiden Co., Ltd , YASUDA, Hiroyuki, Ibiden Co., Ltd
IPC分类号： B24B37/00 , B24B37/04
CPC分类号： B24B55/02 , B24B37/015 , B24B37/12 , B24B37/14 , B24B37/16 , B24B41/047
摘要： A table for a wafer polisher is capable of resisting heat, thermal shocks and abrasion and suited to larger semiconductor wafers of high quality. A table (2) includes a plurality of laminates (11) consisting of silicide-base ceramic or carbide-base ceramic. The laminates (11) are united using a bonding layer (14). Fluid channels (12) are provided in the interface between the laminates (11).

70. 发明公开

EP1970159A1 Bearbeitungsmaschine mit Mitteln zur Erfassung von Bearbeitungsparametern 审中-公开
公开(公告)号：EP1970159A1
公开(公告)日：2008-09-17
申请号：EP08003417.6
申请日：2008-02-26
申请人： Peter Wolters GmbH
发明人： Fischer, Harald
IPC分类号： B24B7/17 , B24B37/04 , B24B49/14 , B24B49/16 , H04Q9/00 , G08C17/02 , G08C23/04
CPC分类号： B24B7/17 , B24B37/015 , B24B37/08 , B24B49/16 , H04Q9/00 , Y10T409/305824
摘要： Bearbeitungsmaschine mit einer oberen rotierend antreibbaren Arbeitsscheibe (10), deren ringförmige Arbeitsfläche (22) einen Arbeitsbelag (26) aufweist und einer unteren Arbeitsfläche (24) zugekehrt ist, wobei die Arbeitsflächen zwischen sich einen Arbeitsspalt (30) bilden, in dem mehrere Läuferscheiben angeordnet sind, die in Ausnehmungen Werkstücke aufnehmen und mittels einer Abwälzvorrichtung in Rotation versetzbar sind, wodurch die sich entlang einer zykloidischen Bahn bewegen, wobei in der oberen Arbeitsscheibe über ihren Querschnitt verteilt mehrere Sensorelemente (32) zur Erfassung von mindestens einem Bearbeitungsparameter angeordnet sind, die Sensorelement jeweils mit einem passiven oder aktiven RFID-Chip gekoppelt sind und der oberen Arbeitsscheibe eine Lesevorrichtung (34) zugeordnet ist zur Auslesung der RFID-Chips.
摘要翻译：处理机具有以旋转方式驱动的上工作盘和多个传感器元件（32），其以分布方式布置在上部工作盘（10）中，用于检测加工参数。传感器元件每个都与无源或有源射频识别（RFID）芯片耦合，并且上工作表面被分配用于读取RFID芯片的读取装置（34）。

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