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    • 64. 发明授权
    • Thin film transistor array panel and method of manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US08673694B2
    • 2014-03-18
    • US11756217
    • 2007-05-31
    • Sun ParkChun-Gi You
    • Sun ParkChun-Gi You
    • H01L29/786
    • H01L27/12H01L27/124H01L27/1248
    • A thin film transistor array panel includes a passivation layer formed on a plurality of end portions of a plurality of gate lines. A portion of the passivation layer has a porous structure formed between a connection portion of a flexible printed circuit substrate and a thin film transistor substrate such that when the flexible printed circuit substrate and the thin film transistor array panel are connected to each other, the passivation layer having a porous structure and which is formed at the connection portion therebetween connects the flexible printed circuit substrate with the thin film transistor array panel thereby minimizing an exposed area of the metal of the connection portion to improve a corrosion resistance thereof.
    • 薄膜晶体管阵列面板包括形成在多条栅极线的多个端部上的钝化层。 钝化层的一部分具有形成在柔性印刷电路基板的连接部分和薄膜晶体管基板之间的多孔结构,使得当柔性印刷电路基板和薄膜晶体管阵列面板彼此连接时,钝化层 具有多孔结构并且在其连接部分处形成的层将柔性印刷电路基板与薄膜晶体管阵列面板连接,从而使连接部分的金属的暴露面积最小化,以提高其耐腐蚀性。
    • 65. 发明授权
    • Thin film transistor array substrate, organic light-emitting display device including the same and method of manufacturing the thin film transistor array substrate
    • 薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造方法
    • US08759836B2
    • 2014-06-24
    • US13589636
    • 2012-08-20
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L29/04H01L29/12H01L29/15
    • H01L27/1288H01L27/1255H01L27/3262H01L29/4908
    • A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.
    • 薄膜晶体管(TFT)阵列基板包括:TFT,包括有源层,栅电极,源电极和漏电极,有源层和栅电极之间的第一绝缘层,以及第二绝缘层和第三绝缘层, 所述栅电极和所述源极漏极,所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层,包括透明导电氧化物材料的像素电极,所述像素电极在所述第一绝缘层和所述第二绝缘层上,并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器,包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层,并且经由开口暴露所述像素电极。
    • 67. 发明授权
    • Display device and method of manufacturing the same
    • 显示装置及其制造方法
    • US08624246B2
    • 2014-01-07
    • US13017362
    • 2011-01-31
    • Chun-Gi You
    • Chun-Gi You
    • H01L27/15
    • H01L27/1288H01L27/1255H01L29/4908
    • A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.
    • 一种显示装置及其制造方法。 在一个实施例中,显示装置包括具有像素区域,晶体管区域和电容器区域的衬底,布置在衬底的晶体管区域内的晶体管和布置在衬底的电容器区域内的电容器,其中电容器包括: 布置在基板上的下电极,布置在下电极上的栅极绝缘层和布置在栅绝缘层上并与下电极重叠的上电极,上电极包括布置在第一导电层上的第一导电层和第二导电层 层,其中所述第一导电层是不透明的。
    • 69. 发明申请
    • ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 有机发光显示装置及其制造方法
    • US20120286281A1
    • 2012-11-15
    • US13239202
    • 2011-09-21
    • Chun-Gi You
    • Chun-Gi You
    • H01L33/02
    • H01L27/3248H01L27/1255H01L27/3246H01L51/56H01L2227/323
    • An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode.
    • 一种有机发光显示装置,包括:包括有源层的薄膜晶体管(TFT),包括第一电极和第二电极的栅电极,源电极和漏电极,源电极上的光致抗蚀剂层和 漏电极,电耦合到TFT的像素电极,包括与第一电极相同的材料,并且与第一电极相同的层,具有暴露像素电极的孔的像素限定层,覆盖光致抗蚀剂的像素限定层 层,像素电极上的中间层,并且包括发光层,以及覆盖中间层并且面向像素电极的相对电极。