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    • 61. 发明授权
    • Sector drive assembly for camera
    • 相机行业驱动装配
    • US07140790B2
    • 2006-11-28
    • US10825549
    • 2004-04-14
    • Yoichi NakanoHiroshi Takahashi
    • Yoichi NakanoHiroshi Takahashi
    • G03B9/08G03B9/40
    • G03B9/18
    • A sector drive assembly for a camera which can open and close an aperture has a sector drive unit having an actuator, a drive force transmitting mechanism, and a sector position detecting unit that are removably mounted as a unit to a support plate, and a sector unit having a base plate formed with an aperture and one or more sectors for opening and closing the aperture. Since the sector drive unit is provided as a removably mountable unit, it is high in versatility and can be mounted to various different types of sector units. In addition, since it is configured to detect the state of the sectors before operation, reliable exposure or opening and closing of the aperture are achieved. In addition, a positional adjustment function is provided by a sector urging spring.
    • 用于可打开和关闭孔的相机的扇形驱动组件具有扇区驱动单元,该扇区驱动单元具有作为单元可拆卸地安装到支撑板的致动器,驱动力传递机构和扇区位置检测单元,以及扇区 单元具有形成有孔的基板和用于打开和关闭孔的一个或多个扇区。 由于扇区驱动单元被设置为可拆卸地安装的单元,所以其通用性高,并且可以安装到各种不同类型的扇区单元。 此外,由于其被配置为在操作之前检测扇区的状态,因此实现了可靠的曝光或打开和关闭光圈。 此外,由扇形推动弹簧提供位置调节功能。
    • 68. 发明申请
    • Semiconductor memory device equipped with error correction circuit
    • 半导体存储器件配有纠错电路
    • US20050229080A1
    • 2005-10-13
    • US11130059
    • 2005-05-17
    • Hiroshi TakahashiAkihiro TakegamaOsamu HandaHiroshi Kimizuka
    • Hiroshi TakahashiAkihiro TakegamaOsamu HandaHiroshi Kimizuka
    • H03M13/19G06F11/10G11C29/00G11C29/42H03M13/00
    • G06F11/1008
    • The objective of the invention is to provide a type of semiconductor memory device equipped with an error correction circuit 200 characterized by the fact that it can perform correction of errors in stored data without increasing the circuit size and power consumption, and without decreasing operating speed. An error correction code EC corresponds to data stored in sub-memory 120 separate from main data stored in main memory 110. In read mode, the main data and error correction code are read from the main memory and sub-memory, respectively. On the basis of these data, the error correction code is generated for correcting errors in the read data. Error correction circuit 300 corrects errors in the main data. By storing the error correction code in a sub-memory different from the main memory and selecting the appropriate layout of the main memory and sub-memory, it is possible to increase the reading speed of the error correction code and to suppress time delays caused by error correction.
    • 本发明的目的是提供一种配备有纠错电路200的半导体存储器件,其特征在于可以在不增加电路尺寸和功耗的情况下执行存储数据中的错误校正,并且不降低操作速度。 纠错码EC对应于与存储在主存储器110中的主数据分离的子存储器120中存储的数据。在读取模式中,主数据和纠错码分别从主存储器和子存储器读取。 基于这些数据,生成用于校正读取数据中的错误的纠错码。 纠错电路300纠正主数据中的错误。 通过将错误校正码存储在与主存储器不同的子存储器中并选择主存储器和子存储器的适当布局,可以增加纠错码的读取速度并且抑制由 纠错。
    • 69. 发明申请
    • Semiconductor memory device, semiconductor device, and method for production thereof
    • 半导体存储器件,半导体器件及其制造方法
    • US20050176211A1
    • 2005-08-11
    • US11024901
    • 2004-12-29
    • Yuzo FukuzakiHiroshi Takahashi
    • Yuzo FukuzakiHiroshi Takahashi
    • H01L27/108H01L21/20H01L21/8234H01L21/8242H01L21/8244H01L21/84H01L27/12H01L29/76H01L31/119
    • H01L27/10832H01L21/84H01L27/10867H01L27/1203
    • Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a reduced area for the cell array. The semiconductor memory device is composed of a substrate having trenches formed side by side, a plate electrode which is formed to a prescribed depth from the surface of the inner wall of the trench, a capacitor insulating film which covers the surface of the inner wall of the trench, a memory node electrode MN which fills the trench, with the capacitor insulating film interposed between them, and a memory node contact plug which is buried in a contact hole which is so made as to reach the memory node electrode from the surface of the semiconductor layer. A metallized region is integrally formed to connect at least part of the surface of the semiconductor layer and at least part of the surface of the contact plug to each other.
    • 公开了半导体存储器件,半导体器件及其制造方法。 半导体存储器件和半导体器件不需要用于光刻对准的距离以通过光刻形成接触孔以形成栅电极。 因此,所得到的器件具有减小的单元阵列的面积。 半导体存储器件由具有并排形成的沟槽的基板,从沟槽的内壁的表面形成规定深度的板电极构成,电容绝缘膜覆盖内壁的内壁的表面 沟槽,填充沟槽的存储器节点电极MN和介于其间的电容器绝缘膜,以及埋入接触孔中的存储器节点接触插塞,所述接触孔被制成从存储器节点电极的表面到达存储器节点电极 半导体层。 金属化区域整体地形成,以将半导体层的表面的至少一部分和接触插塞的表面的至少一部分彼此连接。
    • 70. 发明授权
    • Vehicle obstacle detecting apparatus
    • 车辆障碍物检测装置
    • US06879249B2
    • 2005-04-12
    • US10423916
    • 2003-04-28
    • Hiroshi Takahashi
    • Hiroshi Takahashi
    • B60R21/00B60K28/02B60T7/12B60T7/22G06K9/64G06T1/00G06T7/00G08G1/16B60Q1/00
    • B60T7/22B60W2540/10B60W2540/12B60W2540/16B60W2550/10G06K9/64
    • A vehicle obstacle detecting apparatus has an obstacle sensor, an obstacle detecting section, a vehicle response section, a driver operation storing section, a precision determining section and a threshold value updating section. The obstacle detecting section is configured to determine a presence of an obstacle around the vehicle to output a positive obstacle determination based on a similarity value between the detected obstacle information sent from the obstacle sensor and pre-stored obstacle detection reference information with a threshold value. The driver operation storing section is configured to store an average operation characteristic data calculated based on a driver operation. The precision determining section is configured to determine a detection precision of the obstacle by comparing an expected driver operation determined based on the average operation characteristic data with an actual driver operation. The threshold value updating section is configured to adjust the threshold value based on the detection precision.
    • 车辆障碍物检测装置具有障碍物传感器,障碍物检测部,车辆响应部,驾驶员操作存储部,精度判定部和阈值更新部。 障碍物检测部被配置为基于从障碍物传感器发送的检测到的障碍物信息与预先存储的障碍物检测参考信息与阈值之间的相似度值来确定车辆周围的障碍物的存在以输出正的障碍物确定。 驾驶员操作存储部被配置为存储基于驾驶员操作计算的平均操作特性数据。 精度判定部构成为,通过将基于平均运转特性数据而确定的预期驾驶员操作与实际驾驶员操作进行比较来确定障碍物的检测精度。 阈值更新部构成为基于检测精度来调整阈值。