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61. 发明授权

US06358635B1 Magnetic recording sensor with stabilizing shield 有权
标题翻译：带稳定屏蔽的磁记录传感器
公开(公告)号：US06358635B1
公开(公告)日：2002-03-19
申请号：US09467138
申请日：1999-12-20
申请人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
发明人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
IPC分类号： G11B566
CPC分类号： B82Y10/00 , G11B5/11 , G11B5/115 , G11B5/3109 , G11B5/313 , G11B5/3903 , G11B5/66 , Y10S428/90 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic shielding element for a magnetic recording and sensing device which prevents the problem of pop-corn noise or covariance of amplitude noise in the magnetic sensing device. The shielding element has a layer of antiferromagnetic exchange material formed on a layer of single domain first ferromagnetic material. The single domain first ferromagnetic material is stabilized by the antiferromagnetic exchange material. A layer of non-magnetic metal is then formed on the layer of antiferromagnetic exchange material and a layer of second ferromagnetic material is formed on the layer of non-magnetic metal to complete the shielding element. When the single domains of the first ferromagnetic material are disturbed by the strong magnetic fields of a write cycle they relax with a relaxation time of pico seconds and are fully relaxed before a read cycle begins. The fully relaxed layer of first ferromagnetic material then shields the magnetic sensing device from magnetic field fluctuations caused by the slower relaxation of the domains in the layer of second ferromagnetic material during a read cycle.
摘要翻译：一种用于磁记录和感测装置的磁屏蔽元件，其防止弹性玉米噪声或磁感测装置中振幅噪声的协方差问题。屏蔽元件具有形成在单畴第一铁磁材料层上的反铁磁交换材料层。单畴第一铁磁材料由反铁磁交换材料稳定。然后在反铁磁交换材料层上形成一层非磁性金属，并在非磁性金属层上形成一层第二铁磁材料，以完成屏蔽元件。当第一铁磁材料的单个畴被写入周期的强磁场干扰时，它们以微微秒的弛豫时间放松，并且在读周期开始之前完全松弛。第一铁磁材料的完全松弛层然后屏蔽磁感测装置免受在读周期期间由第二铁磁材料层中的畴的较慢松弛引起的磁场波动。

62. 发明授权

US06322640B1 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element 失效
标题翻译：用于形成反铁磁交换偏磁电阻（MR）传感器元件的多重热退火方法
公开(公告)号：US06322640B1
公开(公告)日：2001-11-27
申请号：US09489969
申请日：2000-01-24
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
IPC分类号： H01F4100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/302 , H01L43/12 , Y10T29/49034
摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.
摘要翻译：一种用于形成磁偏置磁阻（MR）层的方法。首先提供基板。然后在衬底上形成铁磁磁阻（MR）材料层。然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

63. 发明授权

US06291087B1 Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias 失效
标题翻译：具有增强的电阻率敏感性和增强的磁交换偏置的磁阻（MR）传感器元件
公开(公告)号：US06291087B1
公开(公告)日：2001-09-18
申请号：US09336786
申请日：1999-06-21
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3954 , G11B5/66 , G11B2005/3996 , Y10S428/90 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T428/1121
摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.
摘要翻译：一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。首先提供基板。然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。最后，在磁阻（MR）层的表面层上形成磁交换偏置层。该方法考虑了根据该方法制造的磁阻（MR）传感器元件。该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。

64. 发明授权

US06129957A Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications 失效
标题翻译：形成用于磁阻（MR）和巨磁（MR）应用的第二反铁磁交换耦合层的方法
公开(公告)号：US06129957A
公开(公告)日：2000-10-10
申请号：US415247
申请日：1999-10-12
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01F41/22 , H01F41/30 , H01L43/08 , H01L43/12 , B29C35/08 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/304 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3954 , H01F10/3286 , Y10S428/90 , Y10T428/1129
摘要： A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.
摘要翻译：制造磁阻头的方法包括用具有第一AFM元件的磁阻元件形成磁阻结构。在高磁场下进行第一退火步骤。形成剩下的MR结构，包括第二个AFM元素。在制造第二AFM元件之后执行低磁场（汉斯）退火步骤。然后在高温下进行无外部施加的场（Hann = 0）退火步骤，以将第二AFM元件的Hex增加到全强度，由此如果存在减少，则第一AFM元件的稳定性增强或增加其Hex 在低磁场退火步骤期间。

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