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61. 发明授权

US08487289B2 Electrically actuated device 有权
标题翻译：电动装置
公开(公告)号：US08487289B2
公开(公告)日：2013-07-16
申请号：US12899210
申请日：2010-10-06
申请人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro
发明人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro
IPC分类号： H01L45/00
CPC分类号： H01L29/8615 , B82Y10/00 , H01L27/10 , H01L29/2003 , H01L29/247 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147
摘要： An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established on the active region. A conductive nano-channel is formed through a thickness of the insulating material layer.
摘要翻译：电驱动装置包括反应性金属层，与反应性金属层接触建立的第一电极，与第一电极或反应性金属层接触建立的绝缘材料层，建立在绝缘材料层上的有源区，以及在有源区上建立的第二电极。通过绝缘材料层的厚度形成导电纳米通道。

62. 发明授权

US08437172B2 Decoders using memristive switches 有权
标题翻译：使用忆阻开关的解码器
公开(公告)号：US08437172B2
公开(公告)日：2013-05-07
申请号：US13142580
申请日：2009-01-30
申请人： Marco Fiorentino , William M. Tong , Philip J. Kuekes , Jianhua Yang
发明人： Marco Fiorentino , William M. Tong , Philip J. Kuekes , Jianhua Yang
IPC分类号： G11C8/10
CPC分类号： G11C8/10 , G11C13/0007 , G11C13/0023 , G11C2213/32 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch (114) connected between the main terminal (130) and a second addressable terminal (134). The second memristive switch (114) is oriented so that a voltage polarity on the main terminal (130) that tends to turn the first memristive switch (112) on tends to turn the second memristive switch (114) off.
摘要翻译：解码结构采用主端子（130），连接在主端子（130）和第一可寻址端子（132）之间的第一忆阻开关（112）和连接在主端子（130）之间的第二忆阻开关（114））和第二可寻址终端（134）。第二忆阻开关（114）的取向使得倾向于使第一忆阻开关（112）转动的主端子（130）上的电压极性倾向于使第二忆阻开关（114）转动。

63. 发明申请

US20130026434A1 MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE 审中-公开
标题翻译：具有控制电极粒度的电容器
公开(公告)号：US20130026434A1
公开(公告)日：2013-01-31
申请号：US13383634
申请日：2010-01-29
申请人： Jianhua Yang , John Pual Strachan , Matthew D. Pickett , R. Stanley Williams
发明人： Jianhua Yang , John Pual Strachan , Matthew D. Pickett , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/04 , H01L45/1253
摘要： A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.
摘要翻译：具有受控电极晶粒尺寸的忆阻器包括粘合层，具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面，其中第一电极由基材的合金和至少一种第二材料，并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。忆阻器还包括邻近第一电极的第二表面定位的开关层和邻近开关层定位的第二电极。

64. 发明申请

US20130023106A1 DEVICE HAVING MEMRISTIVE MEMORY 有权
标题翻译：具有记忆力的装置
公开(公告)号：US20130023106A1
公开(公告)日：2013-01-24
申请号：US13384000
申请日：2010-03-12
申请人： Matthew D. Pickett , Jianhua Yang , Gilberto Medeiros Ribeiro
发明人： Matthew D. Pickett , Jianhua Yang , Gilberto Medeiros Ribeiro
IPC分类号： G06F13/14 , H01L21/02
CPC分类号： H01L27/0688 , G11C13/0002 , G11C13/0007 , G11C2213/71 , H01L27/101
摘要： A device (10) may include a semiconductor layer section (25) and a memory layer section (45) disposed above the semiconductor layer section (25). The semiconductor layer section (25) may include a processor (12; 412) and input/output block (16; 416), and the memory layer section (45) may include memristive memory (14; 300). A method of forming such device (10), and an apparatus (600) including such device (10) are also disclosed. Other embodiments are described and claimed.
摘要翻译：器件（10）可以包括设置在半导体层部分（25）上方的半导体层部分（25）和存储层部分（45）。半导体层部分（25）可以包括处理器（12; 412）和输入/输出块（16; 416），并且存储器层部分（45）可以包括忆阻存储器（14; 300）。还公开了形成这种装置（10）的方法，以及包括这种装置（10）的装置（600）。描述和要求保护其他实施例。

65. 发明授权

US08325507B2 Memristors with an electrode metal reservoir for dopants 有权
标题翻译：具有用于掺杂剂的电极金属储存器的忆阻器
公开(公告)号：US08325507B2
公开(公告)日：2012-12-04
申请号：US12893825
申请日：2010-09-29
申请人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
发明人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
IPC分类号： H01L29/8605 , H01L21/04 , G11C11/21
CPC分类号： H01L45/1233 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1658
摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。有源区域具有由电场引起的非导电部分和掺杂剂源部分。非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。第二电极包括用于掺杂剂的金属储存器。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

66. 发明授权

US08317515B2 Shape memory dental retention systems 有权
标题翻译：形状记忆牙科保留系统
公开(公告)号：US08317515B2
公开(公告)日：2012-11-27
申请号：US13021597
申请日：2011-02-04
申请人： Young Seo , Jianhua Yang , Victor Chechelski , Jong Gil Park
发明人： Young Seo , Jianhua Yang , Victor Chechelski , Jong Gil Park
IPC分类号： A61C8/00
CPC分类号： A61C8/0065 , A61C8/0016 , A61C8/005 , A61C8/0053 , A61C8/0057 , A61C13/225 , A61C13/235 , A61C2201/007
摘要： Shape memory dental retention systems which facilitate the adjustment or removal of an oral appliance, e.g., a crown or bridge, from a reconfigurable abutment assembly are described. The adjustable abutment assembly may be secured to an anchoring implant bored into the bones within the mouth. The abutment assembly has a projecting abutment portion with one or more shape memory material sleeves or plates or elements extending along the abutment. Each of the sleeves has a length with at least one curved or arcuate portion. Energy may be applied to the elements such that the arcuate portion flattens to allow for the oral appliance to be placed thereupon while removal of the energy allows the elements to reconfigure into its curved configuration thereby locking the oral appliance to the abutment. Removal of the oral appliance may be effected by reapplication of energy to the elements.
摘要翻译：描述了便于从可重新配置的邻接组件调节或去除口腔器具例如牙冠或桥的形状记忆牙固定系统。可调节的邻接组件可以固定到钻孔内的锚定植入物中。基台组件具有突出的邻接部分，其具有一个或多个形状记忆材料套筒或板或沿着邻接部延伸的元件。每个套筒具有至少一个弯曲或弓形部分的长度。可以将能量施加到元件上，使得弓形部分平坦化以允许口腔器具放置在其上，同时移除能量允许元件重新配置成其弯曲构型，从而将口腔器具锁定到邻接处。可以通过将能量重新应用于元件来实现口腔器具的移除。

67. 发明申请

US20120249252A1 OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE 有权
标题翻译：具有负面差分电阻的振荡器电路
公开(公告)号：US20120249252A1
公开(公告)日：2012-10-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译：提供了密切仿效生物神经反应的电路。两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。每个AMC的特征在于不同的电压相关时间常数。当经受等于或大于阈值的电压时，该电路表现出电流的振荡。可以根据施加到电路的电压来产生各种振荡波形。

68. 发明申请

US20120104345A1 MEMRISTIVE DEVICES WITH LAYERED JUNCTIONS AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有层状结构的测量装置及其制造方法
公开(公告)号：US20120104345A1
公开(公告)日：2012-05-03
申请号：US12914935
申请日：2010-10-28
申请人： Matthew D. Pickette , Jianhua Yang , Gilbert Medeiros Ribeiro
发明人： Matthew D. Pickette , Jianhua Yang , Gilbert Medeiros Ribeiro
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1616
摘要： Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
摘要翻译：记忆体系统和制造忆阻器系统的方法被公开。一方面，忆阻器包括第一电极，第二电极和设置在第一电极和第二电极之间的结。该结包括至少一个层，使得每个层具有设置在绝缘子层之间的多个掺杂剂子层。子层的取向基本上平行于第一和第二电极。

69. 发明申请

US20120002267A1 Individually Addressable Nano-Scale Mechanical Actuators 有权
标题翻译：单独寻址纳米级机械执行机构
公开(公告)号：US20120002267A1
公开(公告)日：2012-01-05
申请号：US13256256
申请日：2009-06-30
申请人： Jianhua Yang , R. Stanley William , William Tong
发明人： Jianhua Yang , R. Stanley William , William Tong
IPC分类号： G02B26/00
CPC分类号： F03G7/005
摘要： An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.
摘要翻译：在两个纳米线的交叉处形成可寻址的纳米级机械致动器。致动器具有设置在两个纳米线之间的有源区域，其形成致动器的电极。活性区域含有电解质的材料。当激活电压施加到电极时，材料释放在一个电极处形成气泡的气体，导致致动器的顶表面膨胀。可以通过机械耦合使用凸起来提供纳米尺度的机械致动。纳米线可以被布置成二维阵列以提供单独可寻址致动器的阵列。

70. 发明申请

US20110240952A1 PROGRAMMABLE CROSSPOINT DEVICE WITH AN INTEGRAL DIODE 有权
标题翻译：具有整体二极管的可编程器件
公开(公告)号：US20110240952A1
公开(公告)日：2011-10-06
申请号：US12753715
申请日：2010-04-02
申请人： Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L21/82
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided.
摘要翻译：具有整体二极管的可编程交叉点装置包括插入第一横杆和金属中间层之间的第一横杆，第二横杆，金属中间层和开关氧化物层。开关氧化物层具有低电阻状态和高电阻状态。可编程交叉点装置还包括插入在第二横梁层和金属中间层之间的整体二极管，整体二极管被配置为在一个方向上限制通过可编程交叉点装置的泄漏电流的流动。还提供了一种用于形成具有集成二极管的可编程交叉点器件的方法。

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