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61. 发明申请

US20080011722A1 Laser processing device 有权
标题翻译：激光加工装置
公开(公告)号：US20080011722A1
公开(公告)日：2008-01-17
申请号：US11822972
申请日：2007-07-11
申请人： Yutaka Kobayashi , Kouichi Nehashi , Hiroshi Morikazu
发明人： Yutaka Kobayashi , Kouichi Nehashi , Hiroshi Morikazu
IPC分类号： B23K26/08 , B23K26/02 , B23K26/067
CPC分类号： B23K26/0853 , B23K26/0622 , B23K26/705 , B23K2101/40
摘要： Disclosed a laser processing device capable of recognizing a failure of pulsed laser beam irradiation during a process of pulsed laser beam irradiation and taking appropriate measures. A first judgment section and a second judgment section monitor respectively whether a pulsed laser beam is actually irradiated by an oscillation of a laser oscillator at the timing when a pulse signal is output from a pulse signal output section and whether the pulse signal output section outputs the pulse signal as setting to the laser oscillator at the timing when the pulse signal is output based on the preset pulse number. When there is a failure of the pulsed laser beam irradiation during the processing, the occurrence of failure is recognized and it can be recognized whether the failure is caused by a laser beam irradiating unit or a controller including the pulse signal output section.
摘要翻译：公开了一种能够识别在脉冲激光束照射过程中脉冲激光束照射失败并采取适当措施的激光加工装置。第一判断部分和第二判断部分分别监视在从脉冲信号输出部分输出脉冲信号的时刻脉冲激光束是否被激光振荡器的振荡实际照射，以及脉冲信号输出部分是否输出脉冲信号作为在基于预设脉冲数输出脉冲信号的定时的激光振荡器的设置。当在处理期间发生脉冲激光束照射失败时，识别故障的发生，并且可以识别是否由激光束照射单元或包括脉冲信号输出部的控制器引起故障。

62. 发明申请

US20060249496A1 Processing method and apparatus using laser beam 审中-公开
标题翻译：使用激光束的加工方法和装置
公开(公告)号：US20060249496A1
公开(公告)日：2006-11-09
申请号：US11414352
申请日：2006-05-01
申请人： Hiroshi Morikazu , Nobumori Ogoshi , Koichi Takeyama
发明人： Hiroshi Morikazu , Nobumori Ogoshi , Koichi Takeyama
IPC分类号： B23K26/08 , B23K26/067
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/16 , B23K26/364
摘要： A processing method and apparatus using a laser beam, which can expel as much debris, produced upon application of a laser beam, as possible out of a workpiece to minimize the debris remaining on side surfaces of grooves. The processing method and apparatus superpose a first laser beam (30A) having a width D1 of a focal spot, and a second laser beam (30B) having a focal spot (32B) upstream, in a beam advancing direction, of the focal spot of the first laser beam, and having a width D2 of a beam spot at the focal spot of the first laser beam, D2 being larger than D1 (D2>D1); and apply the superposed laser beams to the workpiece.
摘要翻译：一种使用激光束的处理方法和装置，其可以排除尽可能多的碎片，在施加激光束时可能从工件中产生，以最小化残留在凹槽的侧表面上的碎屑。处理方法和装置将具有焦点宽度D 1的第一激光束（30A）和在光束前进方向上具有焦斑（32B）上游的第二激光束（30B）叠加在第一激光束的焦斑，并且在第一激光束的焦斑处具有束斑的宽度D 2，D 2大于D 1（D 2> D 1）; 并将叠加的激光束施加到工件。

63. 发明申请

US20060163224A1 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US20060163224A1
公开(公告)日：2006-07-27
申请号：US11338761
申请日：2006-01-25
申请人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
发明人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
IPC分类号： B23K26/00
CPC分类号： B23K37/0235 , B23K26/0622 , B23K26/0853 , B23K26/0876 , B23K26/40 , B23K37/0408 , B23K37/0435 , B23K2103/172 , B23K2103/50
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到夹持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。

64. 发明授权

US08759195B2 Optical device wafer processing method 有权
标题翻译：光器件晶圆加工方法
公开(公告)号：US08759195B2
公开(公告)日：2014-06-24
申请号：US13331554
申请日：2011-12-20
申请人： Hiroshi Morikazu , Yoko Nishino
发明人： Hiroshi Morikazu , Yoko Nishino
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , B23K26/364 , B23K26/40 , B23K26/57 , B23K2103/172
摘要： An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.
摘要翻译：光学器件晶片中的光学器件层（ODL）被转移到转移衬底。 ODL通过缓冲层形成在外延基板的正面上。 ODL被多个交叉街道划分，以限定形成多个光学装置的区域。转印衬底粘合到ODL的前侧，并且将外延衬底沿着交叉街道切割成多个块。在激光束的焦点设置在缓冲层中的状态下，将激光束从外延基板的背面施加到外延基板的单元到光学器件晶片和转印基板的单元，从而将激光束分解缓冲层。被划分成多个块的外延衬底从ODL剥离。

65. 发明授权

US08518803B2 Laser processing method for semiconductor wafer 有权
标题翻译：半导体晶圆的激光加工方法
公开(公告)号：US08518803B2
公开(公告)日：2013-08-27
申请号：US12771817
申请日：2010-04-30
申请人： Hiroshi Morikazu
发明人： Hiroshi Morikazu
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0624 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division line on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density per pulse of the pulsed laser beam is set less than or equal to an inflection point where the depth of the laser processed groove steeply increases with an increase in the peak energy density.
摘要翻译：一种半导体晶片的激光加工方法，包括：沟槽形成工序，沿着形成在半导体晶片上的分割线向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽晶片，其中在沟槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，脉冲激光束的每个脉冲的峰值能量密度设定为小于或等于拐点，随着峰值能量密度的增加，激光加工槽的深度急剧增加。

66. 发明授权

US08404999B2 Laser processing apparatus 有权
标题翻译：激光加工设备
公开(公告)号：US08404999B2
公开(公告)日：2013-03-26
申请号：US12899757
申请日：2010-10-07
申请人： Ken Togashi , Keiji Nomaru , Hiroshi Morikazu
发明人： Ken Togashi , Keiji Nomaru , Hiroshi Morikazu
IPC分类号： B23K26/38 , B23K26/067
CPC分类号： B23K26/0853 , B23K26/0673 , C03B33/0222
摘要： A laser processing apparatus including a laser applying unit. The laser applying unit includes a first laser oscillating unit, a second laser oscillating unit, a first laser branching unit for branching a laser beam oscillated from the first laser oscillating unit into three optical paths, a second laser branching unit for branching a laser beam oscillated from the second laser oscillating unit into three optical paths, three first focusing units for respectively focusing the laser beams through the three optical paths obtained by the first laser branching unit toward a glass substrate, and three second focusing units for respectively focusing the laser beams through the three optical paths obtained by the second laser branching unit. The first focusing units and the second focusing units are alternately arranged in a line in an indexing direction.
摘要翻译：一种激光加工设备，包括激光施加单元。激光施加单元包括第一激光振荡单元，第二激光振荡单元，用于将从第一激光振荡单元振荡的激光束分支为三个光路的第一激光分支单元，用于分支激光束振荡的第二激光分支单元从第二激光振荡单元到三个光路中，三个第一聚焦单元，用于分别将激光束通过由第一激光分支单元获得的三个光路聚焦到玻璃基板，以及三个第二聚焦单元，用于分别聚焦激光束由第二激光分支单元获得的三个光路。第一聚焦单元和第二聚焦单元沿分度方向交替布置成一行。

67. 发明申请

US20130017640A1 METHOD OF PROCESSING OPTICAL DEVICE WAFER 审中-公开
标题翻译：处理光学器件波形的方法
公开(公告)号：US20130017640A1
公开(公告)日：2013-01-17
申请号：US13546219
申请日：2012-07-11
申请人： Hiroshi Morikazu , Yoko Nishino
发明人： Hiroshi Morikazu , Yoko Nishino
IPC分类号： H01L33/32
CPC分类号： B23K26/00 , B23K26/40 , H01L23/00 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm.
摘要翻译：一种处理具有包括层叠在蓝宝石衬底上的n型半导体层和p型半导体层的光学器件层的光学器件晶片的方法，其间的缓冲层允许蓝宝石衬底的剥离。该方法包括将转印衬底接合到光学器件层，通过用晶片的蓝宝石衬底侧的脉冲激光束照射缓冲层，转印衬底接合到光学器件层，并将蓝宝石衬底从光学器件晶片，缓冲层破裂，将光学器件层转移到转印衬底上。脉冲激光束具有比蓝宝石衬底的吸收边长长的波长，并且比缓冲层的吸收边短的脉冲宽度，并且设定为使热扩散长度不超过200nm的脉冲宽度。

68. 发明申请

US20120298636A1 LASER PROCESSING APPARATUS 审中-公开
标题翻译：激光加工设备
公开(公告)号：US20120298636A1
公开(公告)日：2012-11-29
申请号：US13477851
申请日：2012-05-22
申请人： Keiji Nomaru , Hiroshi Morikazu , Yoko Nishino
发明人： Keiji Nomaru , Hiroshi Morikazu , Yoko Nishino
IPC分类号： B23K26/00
CPC分类号： B23K26/032 , B23K26/0622 , B23K26/0643 , B23K26/0861 , B23K26/0876 , B23K26/382 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A laser processing apparatus includes a chuck table for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece. A laser beam oscillating unit oscillates a laser beam and a focusing unit focuses the laser beam onto the workpiece. A reflecting unit is provided on the optical axis of the focusing unit. A wavelength detecting unit detects the wavelength of the plasma light reflected by the reflecting unit, and a controller determines the material of the workpiece according to a detection signal from the wavelength detecting unit, to control the laser beam applying unit.
摘要翻译：激光加工装置包括用于保持工件的卡盘台和用于将激光束施加到工件的激光束施加单元。激光束振荡单元振荡激光束并且聚焦单元将激光束聚焦到工件上。反射单元设置在聚焦单元的光轴上。波长检测单元检测由反射单元反射的等离子体光的波长，并且控制器根据来自波长检测单元的检测信号来确定工件的材料，以控制激光束施加单元。

69. 发明申请

US20120292297A1 LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS 有权
标题翻译：激光加工方法和激光加工设备
公开(公告)号：US20120292297A1
公开(公告)日：2012-11-22
申请号：US13473824
申请日：2012-05-17
申请人： Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
发明人： Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
IPC分类号： B23K26/00
CPC分类号： B23K26/3584 , B23K26/0613 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/0853 , B23K26/36 , B23K26/364 , B23K26/40 , B23K26/402 , B23K26/60 , B23K2101/40 , B23K2103/50 , H01L33/0095
摘要： A laser processing method of applying a pulsed laser beam to a workpiece formed from a transparent member, thereby performing laser processing to the workpiece. The laser processing method includes a first laser processing step of applying a first pulsed laser beam to a subject area of the workpiece to roughen the subject area and a second laser processing step of applying a second pulsed laser beam to the subject area roughened by the application of the first pulsed laser beam immediately after performing the first laser processing step, thereby forming a recess in the subject area. The first laser processing step and the second laser processing step are repeated to thereby form a continuous groove in the subject area.
摘要翻译：一种将脉冲激光束施加到由透明构件形成的工件上的激光加工方法，从而对工件进行激光加工。激光加工方法包括：第一激光加工步骤，将第一脉冲激光束施加到工件的主体区域以粗糙化对象区域;以及第二激光加工步骤，将第二脉冲激光束施加到由应用程序粗糙化的对象区域在第一激光加工步骤之后立即进行第一脉冲激光束，从而在主体区域中形成凹陷。重复第一激光加工步骤和第二激光加工步骤，从而在主体区域中形成连续的凹槽。

70. 发明申请

US20120234809A1 LASER PROCESSING METHOD FOR NONLINEAR CRYSTAL SUBSTRATE 有权
标题翻译：非线性晶体衬底的激光加工方法
公开(公告)号：US20120234809A1
公开(公告)日：2012-09-20
申请号：US13413827
申请日：2012-03-07
申请人： Hiroshi Morikazu , Yoko Nishino
发明人： Hiroshi Morikazu , Yoko Nishino
IPC分类号： B23K26/00
CPC分类号： B23K26/064 , B23K26/0624 , B23K26/40 , B23K26/402 , B23K2101/40 , B23K2103/50
摘要： A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less.
摘要翻译：一种具有多个交叉分割线的非线性晶体基板的激光加工方法，其特征在于，包括：沿着分割线向所述非线性晶体基板的工作面施加脉冲激光束，从而在所述非线性晶体基板上形成多个激光加工槽工作面沿分界线。脉冲激光束的脉冲宽度设定为200ps以下，将脉冲激光束的重复频率设定为50kHz以下。

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