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61. 发明授权

US4301509A Method for cooking meat or poultry in thermal oven 失效
标题翻译：在烤箱中烹制肉类或家禽的方法
公开(公告)号：US4301509A
公开(公告)日：1981-11-17
申请号：US93685
申请日：1979-11-13
申请人： Michael A. Haase , Edward B. Miller , Charles W. Eichelberger , Scott E. Cutler , Robert J. Wojnarowski
发明人： Michael A. Haase , Edward B. Miller , Charles W. Eichelberger , Scott E. Cutler , Robert J. Wojnarowski
IPC分类号： F24C7/00 , G06F15/20 , H05B1/02
CPC分类号： F24C7/006 , F24C7/085
摘要： Meat or poultry is cooked automatically in a thermal oven to a desired degree of doneness by a chosen time. The temperature of the meat or poultry is monitored, and linear extrapolations are made therefrom. These extrapolations are compared to the course the cooking should follow, and the oven temperature is automatically varied to correct deviations from the ideal course.
摘要翻译：肉或家禽在热烘箱中自动烹饪至所需时间的期望程度。监测肉类或家禽的温度，并由此进行线性外推。将这些外推与烹饪应遵循的过程进行比较，并且烘箱温度自动变化，以纠正与理想过程的偏差。

62. 发明授权

US08826528B2 Electrical connections for anodized thin film structures 有权
标题翻译：阳极氧化薄膜结构的电气连接
公开(公告)号：US08826528B2
公开(公告)日：2014-09-09
申请号：US13131740
申请日：2009-12-03
申请人： Steven D. Theiss , Michael A. Haase
发明人： Steven D. Theiss , Michael A. Haase
IPC分类号： H05K3/00 , H01L21/768 , H05K3/40 , H01L27/12
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译：描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。辅助垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。阳极氧化后，屏障被去除。如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。

63. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

64. 发明授权

US08748911B2 Stable light source 有权
标题翻译：稳定的光源
公开(公告)号：US08748911B2
公开(公告)日：2014-06-10
申请号：US13003491
申请日：2009-07-14
申请人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
发明人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
IPC分类号： H01L29/18
CPC分类号： H05B33/0812 , H01L25/0753 , H01L33/502 , H01L33/507 , H05B33/0857 , Y02B20/343
摘要： Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
摘要翻译：公开了发光系统。发光系统发射具有第一颜色的输出光。发光系统包括响应于第一信号发射第一波长的光的第一电致发光器件。第一波长基本上与第一信号无关。所发射的第一波长光的强度基本上与第一信号成比例。发光系统还包括第一发光元件，其包括第二电致发光器件和第一光转换层。第二电致发光器件响应于第二信号发射第二波长的光。第一光转换层包括半导体势阱，并将第二波长的至少一部分光转换成比第二波长长的第三波长的光。发光系统将第一波长的光与第三波长的光组合，以形成第一颜色的输出光。当第一和第二信号中的一个信号从信号的最大额定值的约50％变化到最大额定值的约100％时，但是第一信号与第二信号的比率基本保持不变，输出的第一颜色光线基本保持不变。

65. 发明授权

US08461568B2 Re-emitting semiconductor construction with enhanced extraction efficiency 有权
标题翻译：重新发射半导体结构，提高了提取效率
公开(公告)号：US08461568B2
公开(公告)日：2013-06-11
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层形成再发射半导体结构（RSC）。堆叠包括将第一波长的光转换成第二波长的光的有源区，该有源区包括至少一个势阱。堆叠还包括从堆叠的外表面延伸到活动区域的无效区域。在堆叠中形成凹陷，其从外表面延伸到非活性区域。平均凹陷深度为无活性区域的厚度的至少50％或最近的潜在井距离的至少50％。在平面图中，凹陷可以具有至少40％的包装密度。凹陷部也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

66. 发明授权

US08385380B2 Monochromatic light source 有权
标题翻译：单色光源
公开(公告)号：US08385380B2
公开(公告)日：2013-02-26
申请号：US13060643
申请日：2009-07-28
申请人： Catherine A. Leatherdale , Michael A. Haase
发明人： Catherine A. Leatherdale , Michael A. Haase
IPC分类号： H01S5/00
CPC分类号： H01S5/041 , H01S5/02476 , H01S5/183 , H01S5/423
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的电致发光器件。发光系统还包括光腔，其增强来自发光系统的顶表面的光的发射并抑制来自发光系统的一个或多个侧面的光的发射。光腔包括半导体多层堆叠，其接收所发射的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。半导体多层堆叠包括II-VI势阱。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少10倍。

67. 发明授权

US08318552B2 Method for forming gate structures 有权
标题翻译：形成栅极结构的方法
公开(公告)号：US08318552B2
公开(公告)日：2012-11-27
申请号：US12665094
申请日：2008-05-20
申请人： Jeffrey H. Tokie , Michael A. Haase , Robert J. Schubert , Michael W. Bench , Donald J. McClure , Grace L. Ho
发明人： Jeffrey H. Tokie , Michael A. Haase , Robert J. Schubert , Michael W. Bench , Donald J. McClure , Grace L. Ho
IPC分类号： H01L21/677 , H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L27/124 , H01L21/6776 , H01L27/1225 , H01L29/4908 , H01L29/7869
摘要： A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.
摘要翻译：描述了用于形成栅极结构的工艺。网状物包括衬底，设置在衬底上的多个导电元件和导电阳极氧化母线。幅材移动通过阳极氧化站以形成包括与多个栅电极相邻的多个栅极电介质的多个栅极结构。描述了进一步提供半导体，源电极和漏电极的电子器件的形成工艺。

68. 发明申请

US20120188519A1 PROJECTION AND DISPLAY SYSTEM 审中-公开
标题翻译：投影和显示系统
公开(公告)号：US20120188519A1
公开(公告)日：2012-07-26
申请号：US13392635
申请日：2010-08-30
申请人： Stephen J. Willett , Martin B. Wolk , Terry L. Smith , Roy A. Auerbach , Michael A. Haase , Steven G. Saxe , Tommie W. Kelley
发明人： Stephen J. Willett , Martin B. Wolk , Terry L. Smith , Roy A. Auerbach , Michael A. Haase , Steven G. Saxe , Tommie W. Kelley
IPC分类号： G03B21/14
CPC分类号： G03B21/204 , H04N9/3129 , H04N9/3138
摘要： A projection system and a display that incorporates the projection system are provided. The projection system includes at least one electroluminescent device that emits a first wavelength of light, at least one semiconductor multilayer stack that downconverts the first wavelength of light to a second wavelength of light, and a scanning optical element that transmits the light along a scanned direction. The electroluminescent device can be part of an array of electroluminescent devices, and can be monolithic. The semiconductor multilayer stack can be part of an array of semiconductor multilayer stacks, and can also be monolithic. The scanning optical element can be positioned to scan the electroluminescent device across the semiconductor multilayer stack, or it can be positioned to scan the downconverted light after it has left the semiconductor multilayer stack.
摘要翻译：提供了投影系统和包括投影系统的显示器。投影系统包括发射第一波长的光的至少一个电致发光器件，将至少一个将第一波长的光变换为第二波长的光的半导体多层叠层，以及沿扫描方向透射光的扫描光学元件。电致发光器件可以是电致发光器件的阵列的一部分，并且可以是单片的。半导体多层堆叠可以是半导体多层堆叠的阵列的一部分，并且也可以是整体的。扫描光学元件可以定位成跨越半导体多层堆叠扫描电致发光器件，或者可以将扫描光学元件定位成在其离开半导体多层堆叠之后扫描下变换的光。

69. 发明申请

US20110242778A1 Electrical Connections for Anodized Thin Film Structures 有权
标题翻译：阳极氧化薄膜结构的电气连接
公开(公告)号：US20110242778A1
公开(公告)日：2011-10-06
申请号：US13131740
申请日：2009-12-03
申请人： Steven D. Theiss , Michael A. Haase
发明人： Steven D. Theiss , Michael A. Haase
IPC分类号： H05K7/00 , C25D5/02 , C25D7/00 , H05K3/07 , B32B3/10
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译：描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。辅助垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。阳极氧化后，屏障被去除。如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。

70. 发明申请

US20110140128A1 MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO 失效
标题翻译：单色光源高倍率
公开(公告)号：US20110140128A1
公开(公告)日：2011-06-16
申请号：US13058315
申请日：2009-08-18
申请人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
发明人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
IPC分类号： H01L33/50 , H01L33/20 , H01L33/28
CPC分类号： H01L33/20 , H01L33/08 , H01L33/10 , H01L33/505
摘要： Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的LED。发射的第一波长光的主要部分从具有最小横向尺寸Wmin的LED的顶表面离开LED。发射的第一波长光的剩余部分从具有最大边缘厚度Tmax（122,124）的LED的一侧或多侧离开LED。比率Wmin / Tmax至少为30.发光系统还包括包括半导体势阱的再发射半导体结构。再发射半导体结构从顶表面接收离开LED的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

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