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61. 发明授权

US08397169B2 Image forming system capable of causing document box information of the printer driver to automatically adjust to a change in the document box information that is stored in an image forming apparatus 失效
标题翻译：能够使打印机驱动程序的文件盒信息自动调整到存储在图像形成装置中的文件盒信息的变化的图像形成系统
公开(公告)号：US08397169B2
公开(公告)日：2013-03-12
申请号：US12389036
申请日：2009-02-19
申请人： Tetsuji Yamaguchi , Daisuke Yoshida
发明人： Tetsuji Yamaguchi , Daisuke Yoshida
IPC分类号： G06F17/00
CPC分类号： G06F3/1288 , G06F3/1204 , G06F3/1254
摘要： An image forming system including a management device, an image forming apparatus including an auxiliary storage device, and a plurality of information processing devices, which are coupled to one another via a network, the image forming system being configured as follows. The management device is designed to: acquire a box information file regarding a document box created on the auxiliary storage device from the image forming apparatus via the network; and transmit the box information file to each of the plurality of information processing devices in its original format and a state after conversion thereof into a predetermined format. The plurality of information processing devices each control a printer driver compatible with the image forming apparatus to read the received box information file.
摘要翻译：一种图像形成系统，包括经由网络彼此耦合的管理装置，包括辅助存储装置的图像形成装置和多个信息处理装置，所述图像形成系统被配置如下。管理装置被设计成：通过网络从图像形成装置获取关于在辅助存储装置上创建的文件盒的框信息文件; 并将该盒信息文件以原始格式发送到多个信息处理装置中的每一个，并将其转换成预定格式之后的状态。多个信息处理装置各自控制与图像形成装置兼容的打印机驱动程序，以读取接收的盒信息文件。

62. 发明授权

US08368784B2 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08368784B2
公开(公告)日：2013-02-05
申请号：US12836741
申请日：2010-07-15
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： H04N5/335
CPC分类号： H01L27/307 , H01L27/14632 , H01L27/14647 , H01L27/14687 , H01L27/14689
摘要： A solid-state imaging device includes: a light incident side; a circuit formation surface being opposite to the light incident side; and an inorganic photoelectric conversion unit having a pn junction and an organic photoelectric conversion unit including an organic photoelectric conversion layer, which are laminated in the same pixel in a depth direction from the light incident side and on which light is incident without passing through a color filter. Signals of the inorganic photoelectric conversion unit and the organic photoelectric conversion unit are read on the circuit formation surface.
摘要翻译：固态成像装置包括：光入射侧; 电路形成面与光入射侧相对; 以及具有pn结的无机光电转换单元和包括有机光电转换层的有机光电转换单元，其从光入射侧沿深度方向层叠在相同的像素中，并且在不穿过颜色的情况下入射光过滤。在电路形成面上读取无机光电转换单元和有机光电转换单元的信号。

63. 发明授权

US08334552B2 Solid state imaging device that suppresses generation of dark current, and imaging apparatus 有权
标题翻译：抑制暗电流产生的固态成像装置和成像装置
公开(公告)号：US08334552B2
公开(公告)日：2012-12-18
申请号：US12763615
申请日：2010-04-20
申请人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
发明人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC分类号： H01L27/148
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
摘要翻译：具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。

64. 发明授权

US08258030B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08258030B2
公开(公告)日：2012-09-04
申请号：US11970341
申请日：2008-01-07
申请人： Tetsuji Yamaguchi , Hajime Tokunaga
发明人： Tetsuji Yamaguchi , Hajime Tokunaga
IPC分类号： H01L21/8247
CPC分类号： B82Y10/00 , G11C16/04 , G11C2216/06 , H01L21/28273 , H01L24/32 , H01L24/73 , H01L29/42332 , H01L29/66825 , H01L29/7881 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/07811 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/00014 , H01L2924/00 , H01L2924/01014 , H01L2924/00012
摘要： The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a threshold voltage. Further, the present invention provides a method for manufacturing a semiconductor device having a highly reliable semiconductor nonvolatile memory element using a large substrate. According to the present invention, sputtering using, as a target, a solid solution containing silicon that exceeds a solid solubility limit is conducted, so that a conductive film including a conductive layer of a metal element that is a main component of the solid solution and silicon particles is formed, and then, the conductive layer of the metal element is removed to expose silicon particles. Furthermore, a semiconductor device having a semiconductor nonvolatile memory element using the silicon particles as a floating gate electrode is manufactured.
摘要翻译：本发明提供一种半导体器件的制造方法，其具有高可靠性的半导体非易失性存储元件，并且可以增加阈值电压的变化。此外，本发明提供一种使用大基板的具有高可靠性的半导体非易失性存储元件的半导体器件的制造方法。根据本发明，进行使用超过固体溶解度极限的含有硅的固溶体作为目标的溅射，使得包含作为固溶体的主要成分的金属元素的导电层的导电膜和形成硅颗粒，然后去除金属元素的导电层以暴露硅颗粒。此外，制造具有使用硅颗粒作为浮栅电极的半导体非易失性存储元件的半导体器件。

65. 发明授权

US08097928B2 Solid-state imaging device, and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US08097928B2
公开(公告)日：2012-01-17
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L27/14
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

66. 发明授权

US08034649B2 Solid state imaging device, method of manufacturing the same, and imaging apparatus 有权
标题翻译：固态成像装置及其制造方法以及成像装置
公开(公告)号：US08034649B2
公开(公告)日：2011-10-11
申请号：US12763644
申请日：2010-04-20
申请人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
发明人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC分类号： H01L21/70
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
摘要翻译：具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。

67. 发明申请

US20110143488A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20110143488A1
公开(公告)日：2011-06-16
申请号：US13027638
申请日：2011-02-15
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L27/148 , H01L31/20
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

68. 发明授权

US07923778B2 Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device 有权
标题翻译：薄膜集成电路及其制造方法，CPU，存储器，电子卡和电子设备
公开(公告)号：US07923778B2
公开(公告)日：2011-04-12
申请号：US11876429
申请日：2007-10-22
申请人： Tetsuji Yamaguchi , Atsuo Isobe , Satoru Saito
发明人： Tetsuji Yamaguchi , Atsuo Isobe , Satoru Saito
IPC分类号： H02L27/14 , H01L27/88
CPC分类号： H01L27/1259 , H01L27/1214
摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.
摘要翻译：对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供给贱金属膜的节拍，从而提高源的硅化物反应的效率和漏区。

69. 发明申请

US20110019042A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，其制造方法和电子装置
公开(公告)号：US20110019042A1
公开(公告)日：2011-01-27
申请号：US12836741
申请日：2010-07-15
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/307 , H01L27/14632 , H01L27/14647 , H01L27/14687 , H01L27/14689
摘要： A solid-state imaging device includes: a light incident side; a circuit formation surface being opposite to the light incident side; and an inorganic photoelectric conversion unit having a pn junction and an organic photoelectric conversion unit including an organic photoelectric conversion layer, which are laminated in the same pixel in a depth direction from the light incident side and on which light is incident without passing through a color filter. Signals of the inorganic photoelectric conversion unit and the organic photoelectric conversion unit are read on the circuit formation surface.
摘要翻译：固态成像装置包括：光入射侧; 电路形成面与光入射侧相对; 以及具有pn结的无机光电转换单元和包括有机光电转换层的有机光电转换单元，其从光入射侧沿深度方向层叠在相同的像素中，并且在不穿过颜色的情况下入射光过滤。在电路形成面上读取无机光电转换单元和有机光电转换单元的信号。

70. 发明申请

US20100203669A1 SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20100203669A1
公开(公告)日：2010-08-12
申请号：US12763644
申请日：2010-04-20
申请人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
发明人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
摘要翻译：具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。

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