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    • 62. 发明授权
    • Two-layered gate structure for a semiconductor device and method for
producing the same
    • 用于半导体器件的两层栅极结构及其制造方法
    • US6054366A
    • 2000-04-25
    • US33468
    • 1998-03-02
    • Machio YamagishiTakashi Shimada
    • Machio YamagishiTakashi Shimada
    • H01L21/28H01L29/423H01L29/78H01L21/10
    • H01L29/42324H01L21/28123
    • In order to avoid any concentration of an electric field to gate edges of a two-layered structure and to improve an accumulation performance of charge, a semiconductor device includes a semiconductor substrate; an element isolation region formed to define an element formation region in the semiconductor substrate; a first gate insulating layer formed in a part of a surface of the element formation region; a first gate electrode formed on the first gate insulating layer; an insulating layer for surrounding the first gate electrode with a top surface of the insulating layer being substantially in the same plane as that of a top surface of the first electrode; a second gate insulating layer formed on the first gate electrode; and a second gate electrode formed on the second gate insulating layer. Also, a method therefor is provided.
    • 为了避免电场对两层结构的栅极边缘的集中,并且为了提高电荷的积累性能,半导体器件包括半导体衬底; 形成为限定半导体衬底中的元件形成区域的元件隔离区域; 形成在所述元件形成区域的表面的一部分中的第一栅极绝缘层; 形成在所述第一栅极绝缘层上的第一栅电极; 用于围绕所述第一栅极的绝缘层,所述绝缘层的顶表面基本上在与所述第一电极的顶表面相同的平面中; 形成在所述第一栅电极上的第二栅极绝缘层; 以及形成在所述第二栅极绝缘层上的第二栅电极。 另外,提供了一种方法。
    • 64. 发明授权
    • Process for cleaning harmful gas
    • 清洁有害气体的过程
    • US5662872A
    • 1997-09-02
    • US560171
    • 1995-11-17
    • Takashi ShimadaToshio OkumuraToshiya Hatakeyama
    • Takashi ShimadaToshio OkumuraToshiya Hatakeyama
    • B01D53/46B01D53/54B01D53/58B01D53/86B01J20/06
    • B01D53/54B01D53/46B01D53/58B01D53/8621B01D53/8634B01D53/8671B01J20/06
    • There is disclosed a process for cleaning a harmful gas which comprises bringing a gas containing a basic gas as a harmful component such as ammonia and amines into contact with a cleaning agent comprising a cupric salt supported on an inorganic carrier composed of an metallic oxide such as silica and alumina or a metallic oxide mixture of cupric oxide and manganese dioxide to remove the harmful component from the gas containing a basic gas.According to the above process, it is made possible to effectively remove a basic gas such as ammonia and trimethylamine contained in the exhaust gas from semiconductor production process; and a harmful basic gas contained in dilution gas such as air or nitrogen which dilutes the harmful gas suddenly leaked in emergency from a gas bomb filled inside with the harmful gas. Moreover, the process enables to prevent the occurrence of fire even in the coexistence of other gas such as silane, while maintaining excellent effect on the removal of the harmful gas.
    • 公开了一种清洗有害气体的方法,该方法包括使含有碱性气体的气体作为有害成分如氨和胺与包含负载在由金属氧化物构成的无机载体上的铜盐的清洗剂接触,所述无机载体由金属氧化物 二氧化硅和氧化铝或氧化铜和二氧化锰的金属氧化物混合物以从含有碱性气体的气体中除去有害成分。 根据上述方法,能够从半导体制造工序有效地除去废气中所含的氨,三甲基胺等碱性气体, 以及稀释有害气体等稀释气体中所含有的有害碱性气体,在从有害气体填充的气体炸弹的紧急情况下突然泄漏。 此外,该方法即使在其它气体如硅烷的共存下也能够防止火灾的发生,同时对除去有害气体具有优异的效果。
    • 66. 发明授权
    • Vacuum melting-pressure pouring induction furnace
    • 真空熔压浇注感应炉
    • US5559827A
    • 1996-09-24
    • US418326
    • 1995-04-07
    • Takashi ShimadaKenji KitanakaAkio KaneshiroMichio Kawasaki
    • Takashi ShimadaKenji KitanakaAkio KaneshiroMichio Kawasaki
    • B22D39/06B22D41/00F27B14/04F27B14/06F27B14/08F27B14/12F27B14/18F27D1/18H05B6/26F27D3/00
    • F27B14/0806B22D39/06F27B14/04F27B14/061F27D1/1808H05B6/26
    • A furnace in the invention includes an induction melting furnace housed in an air-tight container which can be pressurized to the desired level of maximum allowable pressure and can be vacuum evacuated to a desired level of pressure; a vacuum melting furnace cover having a vacuum evacuating pipe; and a pressure pouring furnace cover, which has a pressure piping to impress the pouring pressure controlled by a pouring pressure control device onto the inside of the furnace and has a pouring siphon, which has its lower end opened to the bottom part within the induction melting furnace and has its upper end connected to a pouring chamber having a pouring nozzle, penetrated therethrough. In the furnace with the construction, the molten metal having been vacuum melted in the induction melting furnace within the air-tight container, which has been tightly closed with the vacuum melting furnace cover and has been vacuum evacuated with the vacuum evacuating pipe, can be poured from the pouring nozzle using the pouring siphon by replacing the vacuum melting furnace cover with the pressure pouring furnace cover and impressing the pressure from the pressure piping to the inside of the air-tight container, which has been tightly closed by the pressure pouring furnace cover, to the maximum allowable pressure.
    • 本发明的炉子包括一个容纳在气密容器中的感应熔化炉,可以将其加压至所需的最大允许压力水平,并将其真空抽真空至所需的压力水平; 具有真空排气管的真空熔化炉盖; 以及压力浇注炉盖,其具有压力管道,用于将由倾倒压力控制装置控制的倾倒压力压入炉内,并具有倾倒虹吸管,其下端在感应熔化状态下向底部开口 并且其上端连接到具有穿过其中的倾倒嘴的倾倒室。 在具有这种结构的炉中,在真空熔化炉盖紧密关闭并用真空抽气管真空抽真空的气密容器内的感应熔炼炉中真空熔融的熔融金属可以是 通过使用倾倒式虹吸从浇注嘴倾倒,用压力浇注炉盖更换真空熔化炉盖,并将压力管道压力压到由压力浇注炉紧密关闭的气密容器的内部 盖,达到最大允许压力。
    • 67. 发明授权
    • Process for cleaning harmful gas
    • 清洁有害气体的过程
    • US5378444A
    • 1995-01-03
    • US975698
    • 1992-11-13
    • Noboru AkitaToshiya HatakeyamaTakashi ShimadaKeiichi Iwata
    • Noboru AkitaToshiya HatakeyamaTakashi ShimadaKeiichi Iwata
    • B01D53/68C01B7/07
    • B01D53/68
    • There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process or leaked suddenly from a gas bomb in an emergency.
    • 公开了一种清洁有害气体的方法,该方法包括使氯,氯化氢,二氯硅烷,四氯化硅,三氯化磷,三氟化氯,三氯化硼,三氟化硼,六氟化钨,四氟化硅,氟,氢等有害的气态卤化物 氟化物和溴化氢与包含氧化锌,氧化铝和碱性化合物的清洗剂接触以除去上述卤化物。 上述过程对于迅速有效地除去在半导体制造过程中排出的气体中所含的上述气态卤化物或在紧急情况下突然从气体炸弹泄漏而非常有效。