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61. 发明申请

US20060014346A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060014346A1
公开(公告)日：2006-01-19
申请号：US11001382
申请日：2004-12-01
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/336
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

62. 发明申请

US20050237793A1 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling 失效
标题翻译：磁性随机存取存储器设计采用静磁耦合控制磁切换机构
公开(公告)号：US20050237793A1
公开(公告)日：2005-10-27
申请号：US11167852
申请日：2005-06-27
申请人： Tai Min , Po Wang
发明人： Tai Min , Po Wang
IPC分类号： G11C11/16 , H01F10/32 , H01F41/30 , H01L43/08 , G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/308 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.
摘要翻译：形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。结果，本发明的多分段电池由于不规则性而不会因结构缺陷而变化。

63. 发明授权

US06358635B1 Magnetic recording sensor with stabilizing shield 有权
标题翻译：带稳定屏蔽的磁记录传感器
公开(公告)号：US06358635B1
公开(公告)日：2002-03-19
申请号：US09467138
申请日：1999-12-20
申请人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
发明人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
IPC分类号： G11B566
CPC分类号： B82Y10/00 , G11B5/11 , G11B5/115 , G11B5/3109 , G11B5/313 , G11B5/3903 , G11B5/66 , Y10S428/90 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic shielding element for a magnetic recording and sensing device which prevents the problem of pop-corn noise or covariance of amplitude noise in the magnetic sensing device. The shielding element has a layer of antiferromagnetic exchange material formed on a layer of single domain first ferromagnetic material. The single domain first ferromagnetic material is stabilized by the antiferromagnetic exchange material. A layer of non-magnetic metal is then formed on the layer of antiferromagnetic exchange material and a layer of second ferromagnetic material is formed on the layer of non-magnetic metal to complete the shielding element. When the single domains of the first ferromagnetic material are disturbed by the strong magnetic fields of a write cycle they relax with a relaxation time of pico seconds and are fully relaxed before a read cycle begins. The fully relaxed layer of first ferromagnetic material then shields the magnetic sensing device from magnetic field fluctuations caused by the slower relaxation of the domains in the layer of second ferromagnetic material during a read cycle.
摘要翻译：一种用于磁记录和感测装置的磁屏蔽元件，其防止弹性玉米噪声或磁感测装置中振幅噪声的协方差问题。屏蔽元件具有形成在单畴第一铁磁材料层上的反铁磁交换材料层。单畴第一铁磁材料由反铁磁交换材料稳定。然后在反铁磁交换材料层上形成一层非磁性金属，并在非磁性金属层上形成一层第二铁磁材料，以完成屏蔽元件。当第一铁磁材料的单个畴被写入周期的强磁场干扰时，它们以微微秒的弛豫时间放松，并且在读周期开始之前完全松弛。第一铁磁材料的完全松弛层然后屏蔽磁感测装置免受在读周期期间由第二铁磁材料层中的畴的较慢松弛引起的磁场波动。

64. 发明授权

US06330136B1 Magnetic read sensor with SDT tri-layer and method for making same 有权
标题翻译：具有SDT三层磁读取传感器及其制作方法
公开(公告)号：US06330136B1
公开(公告)日：2001-12-11
申请号：US09173472
申请日：1998-10-14
申请人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
发明人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： An Spin Dependent Tumelina SDT read sensor includes a first ferromagnetic (FM) layer and a second FM layer separated by an insulating layer. The first FM layer and second FM layer are substantially electrically isolated from each other. Specifically, the sidewalls of the SDT read sensor are substantially free of electrical paths between the first FM layer and the second FM layer. Also, a surface of the second FM layer that is substantially parallel to the air bearing surface, is recessed from the air bearing surface. A method for forming an SDT read sensor includes depositing a first FM material layer, depositing an intermediate insulation material layer over the first FM material layer, and then depositing a second FM material layer over the intermediate insulation material layer. The second FM material layer and the intermediate insulation material layer are etched, with the etching being stopped before the etching etches the first FM material layer.
摘要翻译：旋转依赖Tumelina SDT读取传感器包括由绝缘层分隔的第一铁磁（FM）层和第二FM层。第一FM层和第二FM层基本上彼此电隔离。具体地说，SDT读取传感器的侧壁基本上没有第一FM层和第二FM层之间的电路径。此外，基本上平行于空气轴承表面的第二FM层的表面从空气轴承表面凹陷。一种用于形成SDT读取传感器的方法包括沉积第一FM材料层，在第一FM材料层上沉积中间绝缘材料层，然后在中间绝缘材料层上沉积第二个FM材料层。蚀刻第二FM材料层和中间绝缘材料层，在刻蚀蚀刻第一FM材料层之前蚀刻停止。

65. 发明授权

US06129957A Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications 失效
标题翻译：形成用于磁阻（MR）和巨磁（MR）应用的第二反铁磁交换耦合层的方法
公开(公告)号：US06129957A
公开(公告)日：2000-10-10
申请号：US415247
申请日：1999-10-12
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01F41/22 , H01F41/30 , H01L43/08 , H01L43/12 , B29C35/08 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/304 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3954 , H01F10/3286 , Y10S428/90 , Y10T428/1129
摘要： A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.
摘要翻译：制造磁阻头的方法包括用具有第一AFM元件的磁阻元件形成磁阻结构。在高磁场下进行第一退火步骤。形成剩下的MR结构，包括第二个AFM元素。在制造第二AFM元件之后执行低磁场（汉斯）退火步骤。然后在高温下进行无外部施加的场（Hann = 0）退火步骤，以将第二AFM元件的Hex增加到全强度，由此如果存在减少，则第一AFM元件的稳定性增强或增加其Hex 在低磁场退火步骤期间。

66. 发明申请

US20120127611A1 Modified shield design to eliminate the far-field WATE problem 有权
标题翻译：改良屏蔽设计，消除远场WATE问题
公开(公告)号：US20120127611A1
公开(公告)日：2012-05-24
申请号：US12927797
申请日：2010-11-24
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11B5/17
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A shield design for a magnetic write head is described that eliminates the far-field WATE problem while still maintaining side shielding ability. This is achieved by moving all but the central sections of the three shields (LS, SS, and WS) and, optionally, the top yoke a short distance further away from the recording medium than the ABS.
摘要翻译：描述了用于磁写头的屏蔽设计，其在保持侧屏蔽能力的同时消除了远场WATE问题。这通过移动三个屏蔽件（LS，SS和WS）中的所有中心部分，并且可选地将顶部磁轭移动到比ABS更远离记录介质的距离处。

67. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

68. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

69. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

70. 发明授权

US07994597B2 MRAM with coupling valve switching 有权
标题翻译： MRAM具有联动阀开关
公开(公告)号：US07994597B2
公开(公告)日：2011-08-09
申请号：US12381567
申请日：2009-03-13
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, the control valve layer is heated above its curie point thereby temporarily uncoupling the free layer from said antiferromagnetic layer. Once the control valve cools, the free layer magnetization is once again pinned by the antiferromagnetic layer.
摘要翻译：磁阻存储元件中的自由层由反铁磁层固定而稳定。控制阀层在该反铁磁层和自由层之间提供交换耦合。当将数据写入自由层时，将控制阀层加热到其居里点以上，从而使自由层与所述反铁磁层暂时脱离。一旦控制阀冷却，自由层磁化又被反铁磁层固定住。

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