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61. 发明申请

US20100275981A1 APPARATUS AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS, AND PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件制造装置及其制造方法，光电转换元件
公开(公告)号：US20100275981A1
公开(公告)日：2010-11-04
申请号：US12809447
申请日：2008-12-12
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kouji Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kouji Tanaka
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/18 , C23C16/24 , C23C16/511 , H01L31/028 , H01L31/04 , H01L31/0745 , H01L31/1804 , H01L31/1812 , H01L31/1816 , Y02E10/547 , Y02P70/521
摘要： An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.
摘要翻译：一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.

62. 发明授权

US07691725B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07691725B2
公开(公告)日：2010-04-06
申请号：US10544491
申请日：2004-02-02
申请人： Tadahiro Ohmi , Akinobu Teramoto
发明人： Tadahiro Ohmi , Akinobu Teramoto
IPC分类号： H01L21/30
CPC分类号： H01L21/76256
摘要： An insulating film is formed as a pore-wall protective film (103) on pore walls in a porous layer (102) by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.
摘要翻译：通过使用惰性气体的混合气体等离子体和通过微波激发产生的形成绝缘膜的气体，在多孔层（102）的孔壁上形成绝缘膜作为孔壁保护膜（103）。结果，孔壁保护膜可以具有作为保护膜的膜性质。

63. 发明申请

US20090302382A1 Power Ic Device and Method of Manufacturing Same 有权
标题翻译：电力Ic设备及其制造方法相同
公开(公告)号：US20090302382A1
公开(公告)日：2009-12-10
申请号：US12308057
申请日：2007-05-31
申请人： Alberto O. Adan , Mitsuhiro Kikuta , Akinobu Teramoto , Tadahiro Ohmi , Hiroo Yabe , Takanori Watanabe
发明人： Alberto O. Adan , Mitsuhiro Kikuta , Akinobu Teramoto , Tadahiro Ohmi , Hiroo Yabe , Takanori Watanabe
IPC分类号： H01L27/088 , H01L21/8238 , H01L29/78 , H01L21/336 , H01L27/092 , H01L21/8234
CPC分类号： H01L29/7813 , H01L21/823412 , H01L21/823456 , H01L21/823487 , H01L21/823807 , H01L21/82385 , H01L21/823885 , H01L27/088 , H01L27/0922 , H01L29/045 , H01L29/4236 , H01L29/66734
摘要： In one embodiment of the present invention, a power IC device is disclosed containing a power MOS transistor with a low ON resistance and a surface channel MOS transistor with a high operation speed. There is also provided a method of manufacturing such a device. A chip has a surface of which the planar direction is not less than −8° and not more than +8° off a silicon crystal face. The p-channel trench power MOS transistor includes a trench formed vertically from the surface of the chip, a gate region in the trench, an inversion channel region on a side wall of the trench, a source region in a surface layer of the chip, and a drain region in a back surface layer of the chip. The surface channel MOS transistor has an inversion channel region fabricated so that an inversion channel current flows in a direction not less than −8° and not more than +8° off the silicon crystal direction.
摘要翻译：在本发明的一个实施例中，公开了一种功率IC器件，其包含具有低导通电阻的功率MOS晶体管和具有高操作速度的表面沟道MOS晶体管。还提供了制造这种装置的方法。芯片的表面的平面方向不小于硅晶面的-8°且不大于+ 8°。 p沟道沟槽功率MOS晶体管包括从芯片的表面垂直形成的沟槽，沟槽中的栅极区域，沟槽的侧壁上的反转沟道区域，芯片的表面层中的源极区域，以及芯片的背面层中的漏极区域。表面沟道MOS晶体管具有制造的反向沟道区域，使得反向沟道电流在与硅晶体方向不同于-8°且不大于+ 8°的方向上流动。

64. 发明申请

US20090162995A1 Semiconductor Device Manufacturing Method and Semiconductor Manufacturing Apparatus 有权
标题翻译：半导体器件制造方法和半导体制造装置
公开(公告)号：US20090162995A1
公开(公告)日：2009-06-25
申请号：US11992230
申请日：2005-09-20
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori
IPC分类号： H01L21/322 , B08B13/00 , B05C11/00
CPC分类号： H01L21/306 , H01L29/045 , H01L29/6659 , H01L29/66795 , H01L29/785
摘要： By hydrogen-terminating a semiconductor surface using a solution containing HF2− ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.
摘要翻译：通过使用含有HF 2 - 离子和氧化剂的溶液氢终止半导体表面，可以快速进行氢终止。在这种情况下，半导体表面是具有（111）表面，（110）表面或（551）表面的硅。

65. 发明申请

US20090134120A1 Plasma Processing Method and Plasma Processing Apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20090134120A1
公开(公告)日：2009-05-28
申请号：US11992540
申请日：2005-09-26
申请人： Tadahiro Ohmi , Akinobu Teramoto
发明人： Tadahiro Ohmi , Akinobu Teramoto
IPC分类号： B44C1/22 , H05H1/46 , C23C16/54 , C23F1/08
CPC分类号： H01L21/3065 , C23C16/402 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32449
摘要： A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
摘要翻译：一种等离子体处理装置，其中尽可能地抑制昂贵的氪气和氙气的消耗，同时减少等离子体处理期间对工件的损坏。在使用稀有气体的基板的等离子体处理中，使用两种以上的不同种类的稀有气体，廉价的氩气用作一种稀有气体，氪气和氙气气体中的任何一种或两者具有较大的碰撞横截面作为其他气体，使用与氩气相比的电子区域。因此，尽可能地抑制昂贵的氪气和氙气的消耗，并且在等离子体处理期间减少了工件上的损坏。

66. 发明申请

US20090133713A1 Multilayer structural body and method for cleaning the same 审中-公开
标题翻译：多层结构体及其清洗方法
公开(公告)号：US20090133713A1
公开(公告)日：2009-05-28
申请号：US11988648
申请日：2006-07-12
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hitoshi Morinaga , Yukio Kishi , Hiromichi Ohtaki , Yoshihumi Tsutai
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hitoshi Morinaga , Yukio Kishi , Hiromichi Ohtaki , Yoshihumi Tsutai
IPC分类号： B08B3/12 , B32B5/16
CPC分类号： C23C4/00 , B08B3/02 , B08B3/12 , B08B2203/0288 , C23C4/02 , C23C4/11 , C23C16/405 , C23C16/545 , C23C26/00 , C23C28/04 , Y10T428/25 , Y10T428/252
摘要： It has been difficult to provide a large-sized ceramic member quickly and economically. A multilayer structure is produced by forming a ceramic film on a base which is made of a material that can be shaped comparatively easily. The ceramic film is formed by a plasma spraying method, CVD method, PVD method, sol-gel method or the like. Alternatively, the ceramic film may be formed by a method combined with a spray deposit film.
摘要翻译：很难快速，经济地提供大型陶瓷件。通过在可以相对容易地成形的材料制成的基底上形成陶瓷膜来制造多层结构体。陶瓷膜通过等离子喷涂法，CVD法，PVD法，溶胶 - 凝胶法等形成。或者，陶瓷膜可以通过与喷雾沉积膜结合的方法形成。

67. 发明授权

US07521324B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07521324B2
公开(公告)日：2009-04-21
申请号：US10551843
申请日：2004-03-31
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hidetoshi Wakamatsu , Yasuo Kobayashi
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hidetoshi Wakamatsu , Yasuo Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L21/318 , H01L21/28167 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.
摘要翻译：为了通过将高K绝缘膜的相对介电常数保持在高状态来提供具有良好质量的半导体器件，或者提供一种半导体器件的制造方法，其中高K绝缘膜的相对介电常数可以保持在高状态，公开了在硅衬底和栅极电极层之间包括硅衬底，栅极电极层和栅极绝缘膜的半导体器件。栅极绝缘膜是通过对金属和硅的混合物进行氮化处理而形成的高相对介电常数（高k）膜。高K膜本身成为氮化物，以防止形成SiO 2。

68. 发明申请

US20080054795A1 Organic El Light Emitting Element, Manufacturing Method Thereof, and Display Device 有权
标题翻译：有机EL发光元件及其制造方法及显示装置
公开(公告)号：US20080054795A1
公开(公告)日：2008-03-06
申请号：US11663560
申请日：2004-09-24
申请人： Tadahiro Ohmi , Akinobu Teramoto , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akinobu Teramoto , Akihiro Morimoto
IPC分类号： H01L51/54 , H01J63/04 , H05H1/24 , H05H1/46
CPC分类号： H05B33/28 , H01L51/5206 , H01L51/5253 , H01L51/529 , H01L2251/5361 , H05B33/04
摘要： An organic EL light emitting element is provided with a conductive transparent electrode 3, a counter electrode 8 opposing the conductive transparent electrode 3, an organic EL light emitting layer 6 provided between the conductive transparent electrode 3 and the counter electrode 8, an insulating protection layer 9 provided to cover at least the organic EL light emitting layer 6, and a heat dissipating layer 11 which is brought into contact with the insulating protection layer 9. The conductive transparent electrode has an ITO film including at least one of Hf, V and Zr at least on the surface part on the side of the organic EL light emitting layer 6, and the insulating protection layer 9 includes a nitride film having a thickness of 100 nm or less.
摘要翻译：有机EL发光元件设置有导电透明电极3，与导电透明电极3相对的对置电极8，设置在导电性透明电极3和对置电极8之间的有机EL发光层6，绝缘保护层设置为至少覆盖有机EL发光层6，以及与绝缘保护层9接触的散热层11。导电性透明电极至少在有机EL发光层6侧的表面部分具有包括Hf，V和Zr中的至少一种的ITO膜，绝缘保护层9包括厚度为 100nm以下。

69. 发明申请

US20070023780A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070023780A1
公开(公告)日：2007-02-01
申请号：US10558760
申请日：2004-05-31
申请人： Tadahiro Ohmi , Akinobu Teramoto
发明人： Tadahiro Ohmi , Akinobu Teramoto
IPC分类号： H01L31/00
CPC分类号： H01L21/82385 , H01L21/28167 , H01L21/823857 , H01L29/66787 , H01L29/785
摘要： A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orientations as compared with tat in Si (100) crystal orientation and has a uniform thickness even at corner portions of the three-dimensional structure. By forming a high-quality gate insulating film using a plasma, there can be obtained a semiconductor device having good characteristics.
摘要翻译：在具有多个晶体取向的三维硅衬底表面上使用等离子体形成栅极绝缘膜。与Si（100）晶体取向相比，等离子体栅极绝缘膜在任何晶体取向上的界面态没有增加，即使在三维结构的角部也具有均匀的厚度。通过使用等离子体形成高品质的栅极绝缘膜，可以获得具有良好特性的半导体器件。

70. 发明申请

US20060264059A1 Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd 有权
标题翻译：半导体器件，用于制造半导体器件的方法和用于等离子体cvd的气体
公开(公告)号：US20060264059A1
公开(公告)日：2006-11-23
申请号：US10568461
申请日：2004-08-12
申请人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
发明人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
摘要翻译：本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

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