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61. 发明申请

US20060151072A1 Molybdenum alloy x-ray targets having uniform grain structure 审中-公开
标题翻译：具有均匀晶粒结构的钼合金x射线靶
公开(公告)号：US20060151072A1
公开(公告)日：2006-07-13
申请号：US10553841
申请日：2004-04-15
申请人： James Daily , Brad Lemon , Joseph Hirt , Prabhat Kumar , Gerhard Gille
发明人： James Daily , Brad Lemon , Joseph Hirt , Prabhat Kumar , Gerhard Gille
IPC分类号： C22C27/04 , C22F1/18
CPC分类号： C22B34/34 , B21C23/001 , B21C23/01 , B21J1/025 , B21J5/00 , B22F3/16 , B22F3/162 , B22F3/24 , B22F2003/248 , B22F2998/00 , B22F2998/10 , C22C1/02 , C22C1/1094 , C22C27/04 , C22C32/0031 , C22F1/18 , C23C14/3414 , H01J2235/081 , H05H6/00 , B22F9/24 , B22F3/20 , B22F3/17
摘要： The invention relates to a process for making a cross-directionally worked molybdenum plate, the process comprising: (a) reducing ammonium molybdate and forming molybdenum metal powder; (b) consolidating a molybdenum component comprised of molybdenum metal powder and an alloying element to a first workpiece, the alloying element being selected from the group consisting of titanium, zirconium, hafnium, carbon, lanthanum oxide, and combinations thereof; (c) thermally treating the first workpiece and subjecting the workpiece to thermo-mechanical forces in a first direction, and thereby forming a second workpiece; (d) thermally treating the second workpiece and subjecting the second workpiece to thermo-mechanical forces in a second direction that is different from the first direction; (e) subjecting the thermomechanically treated second workpiece to a recrystallization heat treatment step, and thereby forming a heat-treated crossdirectionally worked workpiece; and (f) subjecting the heat-treated, cross-directionally worked workpiece to a slicing step or a machining step, and thereby forming the cross-directionally worked molybdenum plate. The invention also relates to X-ray targets made from the process.
摘要翻译：本发明涉及制造交叉方向加工的钼板的方法，该方法包括：（a）还原钼酸铵并形成钼金属粉末; （b）将由钼金属粉末和合金元素组成的钼组分固结到第一工件，所述合金元素选自钛，锆，铪，碳，氧化镧及其组合; （c）热处理所述第一工件并使所述工件在第一方向上受到热机械力，从而形成第二工件; （d）对所述第二工件进行热处理并使所述第二工件在与所述第一方向不同的第二方向上进行热机械力; （e）对热机械处理的第二工件进行再结晶热处理步骤，从而形成经热处理的横向加工的工件; 和（f）对经热处理的交叉方向加工的工件进行切片步骤或机械加工步骤，从而形成交叉加工的钼板。本发明还涉及由该方法制成的X射线靶。

62. 发明申请

US20060042728A1 Molybdenum sputtering targets 审中-公开
标题翻译：钼溅射靶
公开(公告)号：US20060042728A1
公开(公告)日：2006-03-02
申请号：US10931203
申请日：2004-08-31
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
IPC分类号： C22F1/18
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译：钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

63. 发明授权

US06521173B2 Low oxygen refractory metal powder for powder metallurgy 有权
$Low oxygen refractory metal powder for powder metallurgy$
公开(公告)号：US06521173B2
公开(公告)日：2003-02-18
申请号：US09906208
申请日：2001-07-16
申请人： Prabhat Kumar , Paul Aimone , Robert W. Balliett , Anthony V. Parise , Thomas M. Ramlow , Henning Uhlenhut
发明人： Prabhat Kumar , Paul Aimone , Robert W. Balliett , Anthony V. Parise , Thomas M. Ramlow , Henning Uhlenhut
IPC分类号： B22F310
CPC分类号： H01G9/042 , B22F1/0088 , B22F3/162 , B22F9/023 , B22F2003/208 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C22B9/14 , C22B34/24 , C22C1/045 , C22C32/0031 , H01G9/0525 , B22F3/04 , B22F3/1208 , B22F3/20 , B22F3/10 , B22F3/15 , B22F3/16 , B22F3/1007 , B22F2201/20
摘要： A method of making sheet bar and other precursors of formed products to be made by extensive working. The method includes providing a powder metal, preferably under 100 PPM oxygen content of non-spherical particles, compacting the powder into a coherent precursor form of at least 100 pounds, whereby a precursor is provided enabling extended fabrication to a finished product form. The finished product is resistant to breakup in fabrication due to oxide inclusion effect and produces a low oxygen end product. The method can process multiple species of metals that include at least one higher melting metal and one lower melting metal to produce an alloy or micro-composite of the metals as worked, where one metal is preferably a refractory metal (Ta, Nb, W, Wo, Zr, Hf, V and Re). The process is controlled to cause powder of the higher melting metal to be extended into a fibrous form.

64. 发明授权

US5846287A Consumable electrode method for forming micro-alloyed products 失效
公开(公告)号：US5846287A
公开(公告)日：1998-12-08
申请号：US787020
申请日：1997-01-27
申请人： Prabhat Kumar , Louis Huber , Robert Engleman , Charles Heatley
发明人： Prabhat Kumar , Louis Huber , Robert Engleman , Charles Heatley
IPC分类号： B23K9/04 , B23K35/32 , B23K35/40 , C22B4/00 , C22B9/20 , C22B34/24 , C22C1/02 , C22C1/04 , C22C1/10 , C22C27/02 , C23C30/00 , B23K35/00
CPC分类号： C22C1/045 , B23K35/32 , B23K35/40 , C22B34/24 , C22B9/20 , C22C1/1036 , C22C1/1042 , C22C27/02 , C23C30/00 , B22F2998/10 , C22C2204/00 , Y10T428/12222 , Y10T428/12819
摘要： A method for forming a wrought product from a starting metal such as tantalum, niobium, and alloys thereof. A consumable electrode is coated with at least a first alloy layer by means which provide for uniform thickness. Sufficient power is applied to the electrode body to induce arcing to cause the starting metal and alloy layers to melt and pool in a crucible. The uniform layer on the electrode body provides a means for delivering minute quantities of alloy into a larger quantity of starting metal and facilitates a uniform and consistent arc which promotes mixing of the alloy and starting material in the crucible. The electrode body is consumed at an improved rate without an associated decrease in the final ingot yield weight. The pooled metal is allowed to solidify into an ingot. The ingot is then formed into a wrought product.

65. 发明授权

US5242481A Method of making powders and products of tantalum and niobium 失效
标题翻译：制造钽和铌的粉末和产品的方法
公开(公告)号：US5242481A
公开(公告)日：1993-09-07
申请号：US626610
申请日：1990-12-12
申请人： Prabhat Kumar
发明人： Prabhat Kumar
IPC分类号： C22B34/24 , C22C1/04
CPC分类号： C22C1/045 , C22B34/24
摘要： A powder of tantalum, niobium, or an alloy thereof, having an oxygen content less than about 300 ppm, and the production thereof without exposure to a temperature greater than about 0.7 T.sub.H. A powder metallurgy formed product of tantalum, niobium, or an alloy thereof, having an oxygen content less than about 300 ppm, and the production thereof without exposure to a temperature greater than about 0.7 T.sub.H.
摘要翻译：氧含量小于约300ppm的钽，铌或其合金粉末，其暴露于大于约0.7TH的温度下的生产。其氧含量小于约300ppm的钽，铌或其合金的粉末冶金成型产品，其生产没有暴露于大于约0.7TH的温度。

66. 发明授权

US09580773B2 Niobium based alloy that is resistant to aqueous corrosion 有权
标题翻译：铌基合金耐水腐蚀
公开(公告)号：US09580773B2
公开(公告)日：2017-02-28
申请号：US14834493
申请日：2015-08-25
申请人： Paul R. Aimone , Prabhat Kumar
发明人： Paul R. Aimone , Prabhat Kumar
IPC分类号： C22B34/24 , C22B34/20 , C22B34/00 , C22B9/22 , C22B9/20 , C22C27/02
CPC分类号： C22B34/24 , C22B9/20 , C22B9/226 , C22B9/228 , C22C27/02
摘要： A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.
摘要翻译：一种铌或铌合金，其含有纯的或基本上纯的铌和至少一种选自Ru，Rh，Pd，Os，Ir，Pt，Mo，W和Re的金属元素，以形成铌合金，含水腐蚀。本发明还涉及制备铌合金的方法。

67. 发明授权

US09443765B2 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
公开(公告)号：US09443765B2
公开(公告)日：2016-09-13
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/82 , H01L21/67 , H01L21/306 , H01L21/56 , H01L21/683 , H01L23/00
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

68. 发明授权

US09112050B1 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing 有权
标题翻译：切割胶带通过晶片框架进行热管理，支持等离子体切割期间的环形冷却
公开(公告)号：US09112050B1
公开(公告)日：2015-08-18
申请号：US14276683
申请日：2014-05-13
申请人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67207 , H01L21/78
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括将由衬底载体支撑的衬底引入等离子体蚀刻室。衬底上具有图案化掩模，其覆盖集成电路并暴露衬底的街道。衬底载体具有背面。该方法还涉及将衬底载体的背侧的至少一部分支撑在等离子体蚀刻室的卡盘上。该方法还包括冷却基板载体的基本上所有背面，冷却涉及通过卡盘冷却基板载体的背面的至少第一部分。该方法还涉及通过街道等离子体蚀刻衬底以对集成电路进行单片化，同时基本上全部衬底载体的背面进行冷却。

69. 发明申请

US20150214111A1 WATER SOLUBLE MASK FORMATION BY DRY FILM VACUUM LAMINATION FOR LASER AND PLASMA DICING 审中-公开
标题翻译：水溶性膜由干膜真空层压制成，用于激光和等离子体处理
公开(公告)号：US20150214111A1
公开(公告)日：2015-07-30
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/683 , H01L21/306 , H01L21/56
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.
摘要翻译：描述了用于切割包括多个集成电路（IC）的半导体晶片的方法和系统。在一个实施方案中，一种方法包括将粘合带粘附到薄水溶性干膜上。该方法包括将粘附到粘合带上的薄水溶性干膜涂覆在半导体晶片的表面上。该方法包括从薄水溶性干膜中去除粘合带。用激光刻划工艺对薄水溶性干膜进行图案化，使IC之间的半导体晶片的区域暴露。该方法包括通过图案化的薄水溶性干膜中的间隙蚀刻半导体晶片，以及去除薄水溶性干膜。

70. 发明授权

US08859324B2 Methods of manufacturing solar cell devices 有权
标题翻译：制造太阳能电池装置的方法
公开(公告)号：US08859324B2
公开(公告)日：2014-10-14
申请号：US13739390
申请日：2013-01-11
申请人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
发明人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
IPC分类号： H01L21/00 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

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