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    • 61. 发明授权
    • Ultrasound transducer and ultrasound diagnostic apparatus
    • 超声波换能器和超声波诊断仪
    • US08512251B2
    • 2013-08-20
    • US13614168
    • 2012-09-13
    • Kazuya MatsumotoKatsuhiro WakabayashiJin HiraokaKazuhisa KarakiMamoru HasegawaSatoshi Yoshida
    • Kazuya MatsumotoKatsuhiro WakabayashiJin HiraokaKazuhisa KarakiMamoru HasegawaSatoshi Yoshida
    • A61B8/12
    • A61B8/12A61B8/445A61B8/4494B06B1/0292
    • An ultrasound transducer includes a substrate and a lower electrode layer, a lower insulating layer, an upper insulating layer, and an upper electrode layer. The lower insulating layer and the upper insulating layer are arranged to be opposed to each other via an air gap section. The upper insulating layer and the lower insulating layer are different in a material and thickness and satisfy Equation 1 below. In Equation 1, K1 represents a relative dielectric constant of the lower insulating layer, K2 represents a relative dielectric constant of the upper insulating layer, T1 represents thickness of the lower insulating layer, T2 represents thickness of the upper insulating layer, ρ1(x) represents a charge density distribution in the lower insulating layer, and ρ2(y) represents a charge density distribution in the upper insulating layer. 1 K ⁢ ⁢ 1 ⁢ ∫ 0 T ⁢ ⁢ 1 ⁢ x × ρ ⁢ ⁢ 1 ⁢ ( x ) ⁢ ⁢ ⅆ x = 1 K ⁢ ⁢ 2 ⁢ ∫ 0 T ⁢ ⁢ 2 ⁢ y × ρ ⁢ ⁢ 2 ⁢ ( y ) ⁢ ⁢ ⅆ y ( Equation ⁢ ⁢ 1 )
    • 超声波换能器包括基板和下电极层,下绝缘层,上绝缘层和上电极层。 下绝缘层和上绝缘层经由气隙部分布置成彼此相对。 上绝缘层和下绝缘层的材料和厚度不同,满足下面的等式1。 在等式1中,K1表示下绝缘层的相对介电常数,K2表示上绝缘层的相对介电常数,T1表示下绝缘层的厚度,T2表示上绝缘层的厚度,rho1(x) 表示下绝缘层中的电荷密度分布,并且rho2(y)表示上绝缘层中的电荷密度分布。 1 K·塞尔·∫··············································································· )⁢ⅆy(方程式1)
    • 70. 发明申请
    • Method of manufacturing micro-optic device
    • 微光器件制造方法
    • US20090004765A1
    • 2009-01-01
    • US12070931
    • 2008-02-22
    • Yoshichika KatoSatoshi YoshidaKeiichi MoriKenji KondouYoshihiko HamadaOsamu Imaki
    • Yoshichika KatoSatoshi YoshidaKeiichi MoriKenji KondouYoshihiko HamadaOsamu Imaki
    • H01L21/02
    • G02B6/3584B81B3/0083B81B2201/045B81C1/00182G02B6/122G02B6/136G02B6/3514G02B6/3518G02B6/3546G02B6/357G02B6/3596G02B26/0841
    • A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate and a single crystal silicon device layer with an intermediate layer of silicon dioxide interposed therebetween defines a substrate on which a layer of mask material is formed and is patterned to form a mask having the same pattern as the configuration of the intended optical device as viewed in plan view. A surface which is to be constricted as a mirror surface is chosen to be in a plane of the silicon crystal. Using the mask, the device layer is vertically etched by a reactive ion dry etching until the intermediate layer is exposed. Subsequently, using KOH solution, a wet etching which is anisotropic to the crystallographic orientation is performed with an etching rate which is on the order of 0.1 μm/min for a time interval on the order of ten minutes is performed to convert the sidewall surface of the mirror into a smooth crystallographic surface. Subsequently, the intermediate layer is selectively subject to a wet etching to remove the intermediate layer only in an area located below the movable part of the optical device.
    • 制造包括复杂结构的微光学装置和可移动反射镜以缩短的时间来制造。 硅衬底和介于其间的二氧化硅中间层的单晶硅器件层限定了其上形成有掩模材料层的衬底并且被图案化以形成具有与所需光学器件的配置相同的图案的掩模 如平面图所示。 要被收缩成为镜面的表面被选择在硅晶体的平面内。 使用掩模,通过反应离子干蚀刻垂直蚀刻器件层,直到中间层露出。 随后,使用KOH溶液,对晶体取向进行各向异性的湿式蚀刻,以10分钟左右的时间间隔进行蚀刻速度为0.1μm/分钟左右的蚀刻速度, 镜子变成光滑的结晶表面。 随后,中间层选择性地进行湿式蚀刻,仅在位于光学器件的可移动部分下方的区域中除去中间层。