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61. 发明授权

US08785957B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08785957B2
公开(公告)日：2014-07-22
申请号：US13612988
申请日：2012-09-13
申请人： Toshio Hata , Masayuki Ito , Masataka Miyata
发明人： Toshio Hata , Masayuki Ito , Masataka Miyata
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , H01L33/56 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00014
摘要： Disclosed is a light-emitting device having a wide luminous-intensity distribution characteristic with a simple structure. The light-emitting device includes a resin package in which an LED chip, a first inner portion of a first lead terminal, and a second inner portion of a second lead terminal are accommodated and which has a second recess portion formed so that a portion including a first recess portion of the first inner portion of the first lead terminal as well as a portion of the second inner portion of the second lead terminal are exposed to a bottom portion of the second recess portion, and a resin portion containing phosphors and filled in the first recess portion of the first lead terminal and in the second recess portion of the resin package. A photoreflective filler is contained in a region opposed to the LED chip of the resin portion including the phosphors.
摘要翻译：公开了具有宽的发光强度分布特性的结构简单的发光装置。发光装置包括其中容纳LED芯片，第一引线端子的第一内部部分和第二引线端子的第二内部部分的树脂封装，并且具有第二凹部，所述第二凹部形成为包括第一引线端子的第一内部部分的第一凹部以及第二引线端子的第二内部部分的一部分暴露于第二凹部的底部，并且包含含有荧光体并填充的树脂部分第一引线端子的第一凹部和树脂封装的第二凹部中。在与包括荧光体的树脂部分的LED芯片相对的区域中包含光反射填料。

62. 发明授权

US08680546B2 Light-emitting apparatus, surface light source, and method for manufacturing package for light-emitting apparatus 有权
标题翻译：发光装置，面光源，以及制造发光装置用封装的方法
公开(公告)号：US08680546B2
公开(公告)日：2014-03-25
申请号：US12490192
申请日：2009-06-23
申请人： Masahiro Konishi , Masaki Kondo , Takaaki Horio , Takanobu Matsuo , Toshio Hata , Kiyohisa Ohta
发明人： Masahiro Konishi , Masaki Kondo , Takaaki Horio , Takanobu Matsuo , Toshio Hata , Kiyohisa Ohta
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , F21K9/23 , F21Y2101/00 , F21Y2115/10 , H01L24/97 , H01L25/0753 , H01L33/46 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/641 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/49113 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01056 , H01L2924/01058 , H01L2924/01063 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19107 , H01L2933/0066 , H01L2224/85 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light-emitting apparatus of the present invention has (i) a semiconductor device which emits light toward a higher position than a substrate and (ii) a plurality of external connection terminals, and includes: a light-reflecting layer, provided on the substrate, which reflects the light emitted by the semiconductor device; and a covering layer which covers at least the light-reflecting layer and which transmits the light reflected by the light-reflecting layer. Further, the semiconductor device is provided on the covering layer, and is electrically connected to the external connection terminals via connecting portions, and the semiconductor device and the connecting portions are sealed with a sealing resin so as to be covered. Therefore, the light-emitting apparatus has increased efficiency with which light is taken out, and can prevent a reflecting layer from being altered, deteriorating, and decreasing in reflectance.
摘要翻译：本发明的发光装置具有：（i）朝向比基板高的位置发光的半导体装置，（ii）多个外部连接端子，具有：设置在基板上的光反射层，其反映由半导体器件发射的光; 以及至少覆盖所述光反射层并透射由所述光反射层反射的光的覆盖层。此外，半导体器件设置在覆盖层上，并且经由连接部分电连接到外部连接端子，半导体器件和连接部分用密封树脂密封以被覆盖。因此，发光装置具有提高光线的效率，能够防止反射层的变化，劣化，反射率的降低。

63. 发明授权

US08421102B2 Semiconductor light-emitting device having a member in a periphery made of a material whose color, transparency or adhesiveness changes overtime due to light or heat emission from the emitting element 有权
标题翻译：半导体发光器件具有由周边部件构成的材料，其颜色，透明度或粘合性由于来自发光元件的光或热发射而随时间变化
公开(公告)号：US08421102B2
公开(公告)日：2013-04-16
申请号：US12618043
申请日：2009-11-13
申请人： Toshio Hata , Nobuaki Aoki
发明人： Toshio Hata , Nobuaki Aoki
IPC分类号： H01L29/267
CPC分类号： H01L33/44 , F21K9/232 , F21K9/64 , F21S8/02 , F21V3/02 , F21V3/04 , F21Y2115/10 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting device in accordance with an embodiment of the present invention includes a semiconductor light-emitting element, and a member in the periphery of the semiconductor light-emitting element is made of a material whose color, transparency or adhesiveness changes over time as it is subjected to light or heat emitted by the semiconductor light-emitting element.
摘要翻译：根据本发明实施例的发光器件包括半导体发光元件，并且半导体发光元件周围的部件由颜色，透明度或粘合性随时间而变化的材料制成它受到由半导体发光元件发出的光或热。

64. 发明授权

US08421088B2 Surface mounting type light emitting diode 有权
标题翻译：表面贴装型发光二极管
公开(公告)号：US08421088B2
公开(公告)日：2013-04-16
申请号：US12035320
申请日：2008-02-21
申请人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
发明人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/644 , H01L2224/48091 , H01L2924/00014
摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes an insulating base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.
摘要翻译：本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。表面安装型发光二极管包括绝缘基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，具有热传导以夹持半导体发光元件。从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。金属反射器可以有效地将热量辐射到外部。为反射器提供的切割边缘有助于切割过程，从而提高生产率。

65. 发明申请

US20100133571A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100133571A1
公开(公告)日：2010-06-03
申请号：US12625993
申请日：2009-11-25
申请人： Osamu Kawasaki , Toshio Hata
发明人： Osamu Kawasaki , Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/50 , H01L33/56 , H01L33/60 , H01L2224/48227 , H01L2224/48465 , H01L2924/13091 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 70 of the present invention includes an insulating base 10; a light-emitting element 1 mounted on a side of the base 10; and a protection element 2 mounted on the side and protecting the light-emitting element 1. The element 2 is covered with a light-reflecting filler-containing resin 5, which is prepared by causing a flexible silicone resin to contain, before being cured, light-reflecting or light-scattering fillers 5a having a particle diameter larger than the wavelength of light emitted by the element 1. This causes light emitted from the element 1 to be reflected by the resin 5, instead of being absorbed by the element 2, so that such light is released to the outside of the light-emitting device 70. This allows the device 70 to extract light to the outside with high efficiency, and also allows for easy formation of the resin 5 having a desired pattern and position.
摘要翻译：本发明的发光装置70为了提供容易产生高效率地向其外部产生光的发光装置，具有绝缘基座10，安装在基座10一侧的发光元件1; 以及安装在侧面并保护发光元件1的保护元件2.元件2被含有光反射填料的树脂5覆盖，该树脂5通过使柔性硅树脂在固化之前包含，光反射或光散射填料5a，其粒径大于由元件1发射的光的波长。这使得从元件1发射的光被树脂5反射，而不是被元件2吸收，使得这样的光被释放到发光装置70的外部。这允许装置70以高效率将光提取到外部，并且还允许容易地形成具有期望的图案和位置的树脂5。

66. 发明申请

US20080203416A1 SURFACE MOUNTING TYPE LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：表面安装型发光二极管及其制造方法
公开(公告)号：US20080203416A1
公开(公告)日：2008-08-28
申请号：US12035216
申请日：2008-02-21
申请人： Masahiro KONISHI , Toshio Hata , Taiji Morimoto
发明人： Masahiro KONISHI , Toshio Hata , Taiji Morimoto
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/644 , H01L33/486 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014
摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.
摘要翻译：本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。表面安装型发光二极管包括金属基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，其具有热传导以夹持半导体发光元件。从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。金属反射器可以有效地将热量辐射到外部。为反射器提供的切割边缘有助于切割过程，从而提高生产率。

67. 发明申请

US20060226434A1 Nitride-based semiconductor light emitting device and manufacturing method thereof 审中-公开
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20060226434A1
公开(公告)日：2006-10-12
申请号：US11403511
申请日：2006-04-12
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/20
摘要： A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered semiconductor layer have smaller area than the pattern surface has, and the multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer. Thus, a highly reliable nitride-based semiconductor light emitting device with excellent adhesion between a nitride-based semiconductor layer and a conductive substrate, and a manufacturing method thereof are provided.
摘要翻译：本发明的氮化物系半导体发光元件包括：形成在导电性基板上的图案表面; 形成在图案表面上的多层金属层; 以及形成在所述多层金属层上的多层半导体层，其特征在于，所述多层金属层和所述多层半导体层的主表面的面积比所述图案表面的面积小，并且所述多层半导体层包括p型氮化物系半导体层，发光层和n型氮化物系半导体层。因此，提供了一种在氮化物系半导体层和导电性基板之间具有优异的粘附性的高度可靠的氮化物系半导体发光元件及其制造方法。

68. 发明授权

US06887311B2 Method of forming ohmic electrode 有权
标题翻译：形成欧姆电极的方法
公开(公告)号：US06887311B2
公开(公告)日：2005-05-03
申请号：US10283371
申请日：2002-10-30
申请人： Mayuko Fudeta , Toshio Hata
发明人： Mayuko Fudeta , Toshio Hata
IPC分类号： H01L21/28 , H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01L33/62 , H01S5/042 , H01S5/323 , H01S5/343 , C30B1/10
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.
摘要翻译：提供一种形成欧姆电极的方法，包括以下步骤：在n型氮化物基化合物半导体层的表面上形成具有1至15nm厚度的铪层; 在铪层上形成铝层; 并且将铪层和铝层退火以形成由铪和铝组成的层。

69. 发明申请

US20050017253A1 Nitride-based compound semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系化合物半导体发光元件及其制造方法
公开(公告)号：US20050017253A1
公开(公告)日：2005-01-27
申请号：US10897548
申请日：2004-07-23
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L27/15 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/42 , H01S5/00
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/32 , H01L33/385 , H01L33/405 , H01L2933/0016
摘要： A nitride-based compound semiconductor light-emitting device comprising a holding electrode partially formed on a first main surface of a semiconductor laminate including nitride-based compound semiconductor layers including at an emission layer. A method of fabricating a nitride-based compound semiconductor light-emitting device, comprising steps of forming a semiconductor laminate by stacking nitride-based compound semiconductor layers at least partially on a substrate to include an emission layer, forming a holding electrode partially on a main surface of the semiconductor laminate located oppositely to the substrate and removing the substrate. Thus, a nitride-based compound semiconductor light-emitting device having high external luminous efficiency with no wafer breakage or cracking and a method of fabricating the same can be proposed.
摘要翻译：一种氮化物系化合物半导体发光器件，包括部分地形成在包括发光层的氮化物类化合物半导体层的半导体层叠体的第一主表面上的保持电极。一种制造氮化物基化合物半导体发光器件的方法，包括以下步骤：至少部分地将氮化物基化合物半导体层堆叠在衬底上以形成半导体层叠体，以包括发射层，部分地在主体上形成保持电极所述半导体层叠体的表面与所述基板相对设置并且移除所述基板。因此，可以提出具有高的外部发光效率而没有晶片破裂或破裂的氮化物基化合物半导体发光器件及其制造方法。

70. 发明申请

US20050006660A1 Nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050006660A1
公开(公告)日：2005-01-13
申请号：US10912294
申请日：2004-08-04
申请人： Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L33/00 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/42
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079
摘要： The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.
摘要翻译：发光器件包括从Si衬底侧依次层叠在Si（硅）衬底上的p型氮化物半导体层，发光层和n型氮化物半导体层。部分去除Si衬底以暴露p型氮化物半导体层的一部分。在p型氮化物半导体层的露出区域上形成p型电极。

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