会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 61. 发明授权
    • Electrolytic capacitor
    • 电解电容器
    • US06885547B2
    • 2005-04-26
    • US10813332
    • 2004-03-30
    • Yukihiro NittaHiroki KusayanagiHiroyuki Matsuura
    • Yukihiro NittaHiroki KusayanagiHiroyuki Matsuura
    • C08G61/12H01G9/02H01G9/14
    • H01G9/02
    • A dielectric oxide film-having anode foil and a cathode foil put opposite to each other via a separator therebetween are coiled up to construct a capacitor device. In this, the separator is coated with an electroconductive polymer formed through chemical oxidation polymerization of a polymerizing monomer in a solution that contains at least a non-transition metal-based oxidizing agent and an organic acid compound. Even when the electrolytic capacitor with the capacitor device is driven in a high-humidity atmosphere and a large amount of water penetrates into it, the capacitor is free from a trouble of dedoping, and therefore keeps its high voltage-proofness and leak current stability. The electrolytic capacitor is resistant to heat and its ESR is low in a high-frequency region.
    • 具有通过隔膜间隔开的彼此相对的具有阳极箔和阴极箔的电介质氧化膜卷起来构成电容器装置。 在此,分离器涂覆有通过聚合单体在至少含有非过渡金属基氧化剂和有机酸化合物的溶液中进行化学氧化聚合形成的导电聚合物。 即使当电容器装置的电解电容器在高湿度气氛中被驱动并且大量的水渗入其中时,电容器也没有脱掺杂的问题,因此保持其高的电压和漏电流的稳定性。 电解电容器耐高温,其高频区域的ESR低。
    • 63. 发明授权
    • Method of correcting the phase and shading in a nuclear magnetic
resonance tomographic device
    • 在核磁共振断层摄影装置中校正相位和阴影的方法
    • US4713614A
    • 1987-12-15
    • US831342
    • 1986-02-20
    • Kazuya HoshinoHiroyuki Matsuura
    • Kazuya HoshinoHiroyuki Matsuura
    • A61B10/00A61B5/055G01R33/48G01R33/565G01R33/58H04N5/16G01R33/20
    • G01R33/565G01R33/58
    • A method of simultaneously correcting distortion in density due to uneven sensitivity of receiving coils, and location dependent phase distortion inherent in the system, wherein a phantom is scanned to determine echo signals, which echo signals are subjected to 2-dimensional inverse Fourier transformation, to obtain an image (Cij) and stored as it is in the form of a complex number, then the object to be examined is measured by similar operation to obtain an image (Oij) and wherein the image (Oij) is divided by computation with image (Cij) as follows .vertline.Sij.vertline.=.vertline.Oij.vertline./.vertline.Cij.vertline., by which equation computation is made to correct for density distortion, and wherein the angle of deviation is set as follows arg [Sij]=arg[Oij]-arg[Cij].ident.0, by which equation computation is made to correct for phase distortion. An image of the object is thus obtained which is corrected for density distortion and for phase distortion, by taking the real number part of the image Sij which is the determined image of the object.
    • 一种同时校正由于接收线圈的灵敏度不均匀引起的密度变形的方法以及系统中固有的位置相关相位失真的方法,其中扫描体模以确定回波信号经受二维傅里叶逆变换的回波信号, 获取图像(Cij)并以复数形式存储,然后通过类似的操作测量待检查对象以获得图像(Oij),并且其中图像(Oij)被图像计算分割 (Cij)如下| Sij| = | Oij| / | Cij|,通过该方程计算来校正密度失真,并且其中偏差角度被设置如下:arg [Sij] = arg [Oij] -arg [Cij] = 0,通过该方程计算来校正相位失真。 由此获得对象的图像,其通过获取作为对象的确定图像的图像Sij的实数部分来校正密度失真和相位失真。
    • 67. 发明授权
    • Film formation apparatus for semiconductor process and method for using the same
    • 用于半导体工艺的成膜装置及其使用方法
    • US08646407B2
    • 2014-02-11
    • US13530941
    • 2012-06-22
    • Hiroyuki Matsuura
    • Hiroyuki Matsuura
    • C23C16/00C23C16/52C23C16/50C23C16/34C23C16/455
    • C23C16/45525C23C16/345C23C16/45527C23C16/4554C23C16/45546C23C16/507H01J37/32862
    • A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.
    • 提供了一种使用成膜装置的方法,该成膜装置包括具有内表面的处理容器,该内表面含有选自石英和碳化硅的材料作为主要成分。 该方法包括进行成膜工艺以在处理容器内部的产品目标基材上形成氮化硅膜,然后从处理容器卸载产品目标衬底。 此后,该方法包括将氧化气体供应到处理容器中,其中没有容纳产品目标衬底,从而进行氧化处理以将沉积在处理容器内表面上的副产物膜变成比氮气更富氧的组合物, 在副产物膜的一部分从其表面到预定深度。
    • 70. 发明授权
    • Vertical batch processing apparatus
    • 立式批处理装置
    • US07815739B2
    • 2010-10-19
    • US11354966
    • 2006-02-16
    • Hiroyuki Matsuura
    • Hiroyuki Matsuura
    • C23C16/00C23F1/00H01L21/306
    • H01L21/31116H01L21/67757Y10S414/139Y10S414/14
    • A semiconductor processing system includes a casing forming a handling area. The handling area includes a main-process area and a pre-process area divided from each other and connected through an openable port. The main-process area and the pre-process area are connected to their own lines for vacuum-exhausting gas therefrom and their own lines for supplying an inactive gas thereinto and adjust pressure independently. A transfer port unit is disposed on the casing to place a transfer container that stores target objects. The transfer port unit allows the transfer container to open to the main-process area while maintaining an airtightness of the main-process area. The system includes a vertical batch main-processing apparatus. The system also includes a vertical batch pre-processing apparatus connected to the pre-process area and that performs a pre-process on the target objects and transforms a semiconductor oxide film on the target objects into an intermediate film.
    • 半导体处理系统包括形成处理区域的壳体。 处理区域包括彼此分隔并通过可打开端口连接的主处理区域和预处理区域。 主处理区域和预处理区域连接到它们自己的管线上,用于从其中真空排出气体和它们自己的用于提供惰性气体的管线并独立地调节压力。 传送端口单元设置在壳体上以放置存储目标对象的传送容器。 传送端口单元允许转印容器在主过程区域打开,同时保持主处理区域的气密性。 该系统包括垂直批量主处理装置。 该系统还包括连接到预处理区域的垂直批量预处理装置,并对目标物体执行预处理,并将目标物体上的半导体氧化膜转换为中间膜。