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61. 发明授权

US07837790B2 Formation and treatment of epitaxial layer containing silicon and carbon 有权
标题翻译：含硅和外延层的形成和处理
公开(公告)号：US07837790B2
公开(公告)日：2010-11-23
申请号：US11566031
申请日：2006-12-01
申请人： Yihwan Kim , Arkadii V. Samoilov
发明人： Yihwan Kim , Arkadii V. Samoilov
IPC分类号： C30B29/38
CPC分类号： C23C16/24 , C23C16/56 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10T117/1004
摘要： Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法和装置。外延层的处理将间隙碳转化为替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，外延层的处理包括在短时间内进行退火，例如通过激光退火，毫秒退火，快速热退火和含氮环境的尖峰退火。

62. 发明授权

US07776698B2 Selective formation of silicon carbon epitaxial layer 有权
标题翻译：选择性形成硅碳外延层
公开(公告)号：US07776698B2
公开(公告)日：2010-08-17
申请号：US11867933
申请日：2007-10-05
申请人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/36 , H01L21/311
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.
摘要翻译：公开了用于形成包含n掺杂硅的外延层的方法，包括用于在半导体器件中形成和处理外延层的方法，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 n掺杂外延层的形成包括在第一温度和压力下将工艺室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体，然后在第二温度和压力下将衬底暴露于蚀刻剂更高的温度和更高的压力比沉积期间。

63. 发明授权

US07651948B2 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US07651948B2
公开(公告)日：2010-01-26
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/302
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

64. 发明授权

US07521365B2 Selective epitaxy process with alternating gas supply 有权
公开(公告)号：US07521365B2
公开(公告)日：2009-04-21
申请号：US11421156
申请日：2006-05-31
申请人： Yihwan Kim , Arkadii V. Samoilov
发明人： Yihwan Kim , Arkadii V. Samoilov
IPC分类号： H01L21/302
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

65. 发明授权

US07517775B2 Methods of selective deposition of heavily doped epitaxial SiGe 有权
标题翻译：选择沉积重掺杂外延SiGe的方法
公开(公告)号：US07517775B2
公开(公告)日：2009-04-14
申请号：US11420906
申请日：2006-05-30
申请人： Yihwan Kim , Arkadii V. Samoilov
发明人： Yihwan Kim , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

66. 发明申请

US20090093094A1 Selective Formation of Silicon Carbon Epitaxial Layer 有权
标题翻译：硅碳外延层的选择性形成
公开(公告)号：US20090093094A1
公开(公告)日：2009-04-09
申请号：US11867933
申请日：2007-10-05
申请人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
IPC分类号： H01L21/365 , H01L21/336
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.
摘要翻译：公开了用于形成包含n掺杂硅的外延层的方法，包括用于在半导体器件中形成和处理外延层的方法，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 n掺杂外延层的形成包括在第一温度和压力下将工艺室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体，然后在第二温度和压力下将衬底暴露于蚀刻剂更高的温度和更高的压力比沉积期间。

67. 发明申请

US20090011578A1 METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS 有权
标题翻译：使用选择性沉积工艺制作MOSFET器件的方法
公开(公告)号：US20090011578A1
公开(公告)日：2009-01-08
申请号：US12201681
申请日：2008-08-29
申请人： ARKADII V. SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： ARKADII V. SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/203
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

68. 发明申请

US20080182397A1 Selective Epitaxy Process Control 有权
标题翻译：选择性外延过程控制
公开(公告)号：US20080182397A1
公开(公告)日：2008-07-31
申请号：US11669550
申请日：2007-01-31
申请人： Andrew Lam , Yihwan Kim
发明人： Andrew Lam , Yihwan Kim
IPC分类号： H01L21/36
CPC分类号： H01L29/7834 , C30B23/04 , C30B25/04 , C30B35/00 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.
摘要翻译：提供在处理室内包含的衬底表面上选择性地和外延地形成含硅材料的方法。在一个或多个实施例中，在材料沉积在衬底上时，处理室中的压力降低，并且在从衬底蚀刻材料期间增加。根据实施例，工艺气体通过第一区域和第二区域流入腔室，以提供流入第一区域的气体量与流向第二区域的气体的量的比率。在一个或多个实施例中，第一区域是内部径向区域，第二区域是外部径向区域，并且内部区域气体流与外部区域气体流量的比例在沉积期间比在蚀刻期间更小。根据一个或多个实施例，选择性外延工艺包括重复沉积周期，然后重复蚀刻工艺，以及任选的清洗直到生长外延层的期望厚度。

69. 发明申请

US20080138964A1 Formation of Epitaxial Layer Containing Silicon and Carbon 有权
标题翻译：含硅和碳的外延层的形成
公开(公告)号：US20080138964A1
公开(公告)日：2008-06-12
申请号：US11609608
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

70. 发明申请

US20070207596A1 SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY 有权
标题翻译：具有替代气体供应的选择性外延工艺
公开(公告)号：US20070207596A1
公开(公告)日：2007-09-06
申请号：US11745416
申请日：2007-05-07
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.
摘要翻译：在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

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