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61. 发明申请

US20110133195A1 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20110133195A1
公开(公告)日：2011-06-09
申请号：US12926665
申请日：2010-12-02
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L27/15 , H01L29/12 , H01L21/336
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78678
摘要： A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要翻译：薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

62. 发明申请

US20110121302A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110121302A1
公开(公告)日：2011-05-26
申请号：US12954544
申请日：2010-11-24
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/3262
摘要： An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
摘要翻译：公开了一种具有简化的制造工艺和改进的电气特性的有机发光显示装置，以及制造该装置的方法。该装置包括：具有显示区域和非显示区域的基板; 在显示区域中的薄膜晶体管（TFT）; 非显示区域中的布线部分; 电连接到TFT并包括有机发光层的中间层; 和中间层上的对电极。 TFT包括有源层，栅电极和电连接到有源层的源/漏电极。源极/漏极包括依次堆叠的第一导电层，第二导电层和第三导电层。布线部分包括与第一导电层相同的材料。源/漏电极中的一个比另一个长，用作像素电极，并且电连接到中间层。

63. 发明授权

US07948168B2 Organic light emitting display and method of manufacturing the same 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US07948168B2
公开(公告)日：2011-05-24
申请号：US12406197
申请日：2009-03-18
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Soo-Hyun Kim , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Soo-Hyun Kim , Yul-Kyu Lee
IPC分类号： H01J1/62 , H01J63/04 , H01L51/00
CPC分类号： H01L27/3246 , H01L27/3258 , H01L27/3276 , H01L51/5246 , H01L2251/558
摘要： An organic light emitting display includes a first substrate having a plurality of pixel areas, a driving transistor disposed on the first substrate, an organic layer disposed on the driving transistor, a first electrode disposed on the organic layer and electrically connected to the driving transistor, an insulating layer pattern disposed on the organic layer, the insulating layer pattern having a first opening corresponding to each pixel area, a bank pattern disposed on the insulating layer pattern, the bank pattern having a second opening corresponding to the first opening, an organic light emitting layer disposed in the first and second openings, and a second electrode disposed on the organic light emitting layer.
摘要翻译：有机发光显示器包括具有多个像素区域的第一基板，设置在第一基板上的驱动晶体管，设置在驱动晶体管上的有机层，设置在有机层上并与驱动晶体管电连接的第一电极，设置在所述有机层上的绝缘层图案，所述绝缘层图案具有对应于每个像素区域的第一开口，设置在所述绝缘层图案上的堤图案，所述堤图案具有对应于所述第一开口的第二开口，所述有机光设置在第一和第二开口中的第二电极和设置在有机发光层上的第二电极。

64. 发明授权

US07947539B2 Thin film transistor array panel for a display device and a method of manufacturing the same 有权
标题翻译：用于显示装置的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07947539B2
公开(公告)日：2011-05-24
申请号：US12548834
申请日：2009-08-27
申请人： Chun-Gi You
发明人： Chun-Gi You
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/124 , H01L29/66765
摘要： A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.
摘要翻译：制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层，半导体层和蚀刻停止层; 使用光刻法同时蚀刻和图案化蚀刻停止层和半导体层; 灰化和部分去除蚀刻停止层和半导体层的图案化中使用的光致抗蚀剂膜图案; 蚀刻由去除的光致抗蚀剂膜图案的部分暴露的蚀刻停止层，以形成蚀刻停止构件; 将欧姆接触和数据金属层沉积到蚀刻停止构件上，同时使用光刻法蚀刻欧姆接触和数据金属层，以在源极和漏极之下形成具有源极和漏极以及欧姆接触构件的数据线; 在数据线和漏电极上形成钝化层; 以及在钝化层上形成像素电极。

65. 发明申请

US20110101353A1 Display device and method of manufacturing the same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20110101353A1
公开(公告)日：2011-05-05
申请号：US12805994
申请日：2010-08-27
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L29/78633 , H01L27/3272 , H01L51/5281
摘要： A display device and a method of manufacturing the same, the display device including a substrate, a semiconductor layer on the substrate, a light shielding layer on the substrate, the light shielding layer and the semiconductor layer being positioned directly on a same layer, a gate insulating layer on the substrate covering the semiconductor layer and the light shielding layer, and a gate electrode on the gate insulating layer, the gate electrode corresponding to a channel region of the semiconductor layer.
摘要翻译：一种显示装置及其制造方法，所述显示装置包括基板，所述基板上的半导体层，所述基板上的遮光层，所述遮光层和所述半导体层直接位于同一层上，覆盖半导体层和遮光层的基板上的栅极绝缘层，栅极绝缘层上的栅极电极，对应于半导体层的沟道区域的栅电极。

66. 发明授权

US07803672B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07803672B2
公开(公告)日：2010-09-28
申请号：US12433743
申请日：2009-04-30
申请人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You , Jae-Byoung Chae , Tae-Ill Kim
发明人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You , Jae-Byoung Chae , Tae-Ill Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/4908 , H01L29/66757
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层，栅电极，源极和漏极以及像素电极中选择的一个时形成第一对准键，其中从半导体层，栅电极，源电极和漏电极中选择一个，并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极，并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。

67. 发明申请

US20090311814A1 THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：用于显示装置的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20090311814A1
公开(公告)日：2009-12-17
申请号：US12548834
申请日：2009-08-27
申请人： Chun-Gi You
发明人： Chun-Gi You
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L29/66765
摘要： A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.
摘要翻译：制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层，半导体层和蚀刻停止层; 使用光刻法同时蚀刻和图案化蚀刻停止层和半导体层; 灰化和部分去除蚀刻停止层和半导体层的图案化中使用的光致抗蚀剂膜图案; 蚀刻由去除的光致抗蚀剂膜图案的部分暴露的蚀刻停止层，以形成蚀刻停止构件; 将欧姆接触和数据金属层沉积到蚀刻停止构件上，同时使用光刻法蚀刻欧姆接触和数据金属层，以在源极和漏极之下形成具有源极和漏极以及欧姆接触构件的数据线; 在数据线和漏电极上形成钝化层; 以及在钝化层上形成像素电极。

68. 发明申请

US20080079010A1 THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管面板及其制造方法
公开(公告)号：US20080079010A1
公开(公告)日：2008-04-03
申请号：US11856489
申请日：2007-09-17
申请人： Bong-Ju Kim , Chun-Gi You
发明人： Bong-Ju Kim , Chun-Gi You
IPC分类号： H01L33/00 , H01L21/70
CPC分类号： H01L27/1251 , G02F1/13454 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/124
摘要： A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode.
摘要翻译：一种薄膜晶体管阵列面板，包括形成在基板上的栅极驱动电路部分的基板，栅极线和栅极层信号传输线，形成在栅极线和栅极层信号传输线上的栅极绝缘层，以及具有暴露栅极层信号传输线的一部分的第一接触孔，形成在栅极绝缘层上的半导体层，形成在栅极绝缘层和半导体层上的源电极和漏电极的数据线，栅极驱动电路部分的数据层信号传输线，形成在栅极绝缘层上并通过第一接触孔连接到栅极层信号传输线，连接到漏极的像素电极和形成在漏电极上的钝化层数据线，漏电极和数据层信号传输线。数据线，漏电极和数据层信号传输线具有包括下层，中间层和上层的三层结构。下层由与像素电极相同的层制成。

69. 发明申请

US20080044982A1 THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于显示装置的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20080044982A1
公开(公告)日：2008-02-21
申请号：US11627683
申请日：2007-01-26
申请人： Chun-Gi You
发明人： Chun-Gi You
IPC分类号： H01L21/76
CPC分类号： H01L27/12 , H01L27/124 , H01L29/66765
摘要： A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.
摘要翻译：制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层，半导体层和蚀刻停止层; 使用光刻法同时蚀刻和图案化蚀刻停止层和半导体层; 灰化和部分去除蚀刻停止层和半导体层的图案化中使用的光致抗蚀剂膜图案; 蚀刻由去除的光致抗蚀剂膜图案的部分暴露的蚀刻停止层，以形成蚀刻停止构件; 将欧姆接触和数据金属层沉积到蚀刻停止构件上，同时使用光刻法蚀刻欧姆接触和数据金属层，以在源极和漏极之下形成具有源极和漏极以及欧姆接触构件的数据线; 在数据线和漏电极上形成钝化层; 以及在钝化层上形成像素电极。

70. 发明申请

US20080030671A1 Reflection-Transmission Type Liquid Crystal Display Device and Method for Manufacturing the Same 失效
标题翻译：反射透射型液晶显示装置及其制造方法
公开(公告)号：US20080030671A1
公开(公告)日：2008-02-07
申请号：US11841135
申请日：2007-08-20
申请人： Chun-Gi You
发明人： Chun-Gi You
IPC分类号： G02F1/13
CPC分类号： G02F1/133555 , G02F1/1345 , G02F1/13454 , G02F1/13458 , G02F1/136213 , G02F1/136227 , G02F2001/133388 , G02F2001/136236 , G02F2001/13685 , H01L27/1248
摘要： Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.
摘要翻译：公开了一种液晶显示器（LCD）装置及其制造方法。 LCD装置具有包括显示区域和位于显示区域周边的焊盘区域的基板，显示区域具有透明电极，该焊盘区域具有焊盘电极。透明电极和焊盘电极由相同的层形成。在透明电极上形成具有透射透明电极的一部分的透射窗的反射电极。由于透明电极直接连接到反射电极，所以可以简化制造工艺。由于焊盘电极由与透明电极相同的层形成，所以不会发生金属腐蚀，从而在COG接合期间增加焊盘的可靠性。

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