专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20070210032A1 Plasma Processing Apparatus And Method For Controlling The Same 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US20070210032A1
公开(公告)日：2007-09-13
申请号：US11696263
申请日：2007-04-04
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： H01L21/306
CPC分类号： H01J37/32165 , C23F4/00 , H01J37/32082
摘要： A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF power supply and a third RF voltage from the third RF power supply. The controlling method includes the steps of supplying a predetermined power from the first RF power supply to ignite plasma, after confirming ignition of plasma, supplying a predetermined power respectively from the second RF power supply and the third RF power supply, and when starting power supply from the second RF power supply and the third RF power supply, fixing the phase to a predetermined phase angle using a preset mode without carrying out phase control, and after a matching operation has stabilized, starting the phase control.
摘要翻译：一种用于控制等离子体处理装置的方法，其包括真空容器，第一，第二和第三RF电源，第一和第二电极以及相位控制单元，用于控制来自第二RF功率的第二RF电压之间的相位差电源和第三RF电源的第三RF电压。该控制方法包括以下步骤：在确认等离子体的点火之后，分别从第二RF电源和第三RF电源提供预定功率，以及当启动电源时，从第一RF电源提供预定功率以点燃等离子体从第二RF电源和第三RF电源，使用预设模式将相位固定为预定相位角，而不执行相位控制，并且在匹配操作已经稳定之后，开始相位控制。

62. 发明授权

US10541115B2 Plasma processing apparatus 有权
公开(公告)号：US10541115B2
公开(公告)日：2020-01-21
申请号：US13363427
申请日：2012-02-01
申请人： Yusaku Sakka , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku Sakka , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01J37/32
摘要： In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

63. 发明授权

US08906196B2 Plasma processing apparatus and method for controlling the same 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US08906196B2
公开(公告)日：2014-12-09
申请号：US12019150
申请日：2008-01-24
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01J37/32 , C23F4/00
CPC分类号： H01J37/32165 , C23F4/00 , H01J37/32082
摘要： A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies which supply first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed inside or outside the vacuum vessel, a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency, and a RF radiation unit which is supplied with the third RF voltage. The apparatus further comprises a voltage detector, and the phase control unit computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.
摘要翻译：等离子体处理装置包括：真空容器，第一，第二和第三电源，其提供第一，第二和第三RF电压;设置在真空容器内的第一电极;设置在真空容器内部或外部的第二电极;相位控制单元用于控制第二和第三RF电压的相位差，其中第二和第三RF电压具有相同的频率，以及被提供有第三RF电压的RF辐射单元。该装置还包括电压检测器，并且相位控制单元基于电压检测器的输出来计算第二和第三RF电压之间的相位差。

64. 发明申请

US20100175833A1 Plasma processing apparatus and plasma generating apparatus 审中-公开
标题翻译：等离子体处理装置和等离子体发生装置
公开(公告)号：US20100175833A1
公开(公告)日：2010-07-15
申请号：US12461891
申请日：2009-08-27
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： C23F1/08
CPC分类号： H01J37/3266 , H01J37/321 , H01J37/32623
摘要： The invention provides an ICP source plasma processing apparatus having improved the uniformity and ignition property of plasma. A plasma processing apparatus for generating plasma in a vacuum processing chamber to subject a sample to plasma processing, comprising multiple sets (7-1 through 7-4 and 7′-1 through 7′-4) of high frequency induction antennas for forming an induction electric field rotating in a right direction on an ECR plane of the magnetic field formed in the vacuum processing chamber, wherein the phases of currents supplied to the respect sets of high frequency induction antenna elements 7-1 through 7-4 and 7′-1 through 7′-4 are controlled so that the corresponding elements are provided with currents of the same phase, according to which plasma is generated via electron cyclotron resonance (ECR).
摘要翻译：本发明提供了一种改进了等离子体的均匀性和点火性能的ICP源等离子体处理装置。一种用于在真空处理室中产生等离子体的等离子体处理装置，用于对样品进行等离子体处理，所述等离子体处理装置包括多组高频感应天线（7-1至7-4和7'-1至7'-4），用于形成感应电场在真空处理室中形成的磁场的ECR平面上沿右方向旋转，其中提供给高频感应天线元件7-1至7-4和7'- 控制1至7'-4，使得相应的元件具有相同相位的电流，根据该电流，通过电子回旋共振（ECR）产生等离子体。

65. 发明申请

US20100163184A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100163184A1
公开(公告)日：2010-07-01
申请号：US12370215
申请日：2009-02-12
申请人： Takamasa ICHINO , Ryoji Nishio , Tomoyuki Tamura , Shinji Obama
发明人： Takamasa ICHINO , Ryoji Nishio , Tomoyuki Tamura , Shinji Obama
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/32935
摘要： A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.
摘要翻译：一种用于处理被处理衬底的表面的等离子体处理装置包括处理室，设置在处理室中的第一电极，与第一电极相对布置的第二电极，用于提供第一或具有用于产生等离子体的功率的第二电极，用于向第二或第一电极供应偏压功率的偏置电源，用于将处理气体供应到处理室的气体供应单元和用于控制主电源的控制单元电源和气体供应单元。控制单元执行控制，使得在从要进行等离子体处理的等离子体的静止状态转变到等离子体淬火的时间期间，主电源的输出保持不大于输出偏置电源。

66. 发明申请

US20070235135A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070235135A1
公开(公告)日：2007-10-11
申请号：US11513233
申请日：2006-08-31
申请人： Ryoji Nishio , Tsutomu Iida
发明人： Ryoji Nishio , Tsutomu Iida
IPC分类号： C23F1/00
CPC分类号： H01J37/32706 , H01J37/32091 , H01L21/67069 , H01L21/6833
摘要： A plasma processing apparatus including a vacuum vessel, a lower electrode provided in the vacuum vessel to place a sample thereon, a matcher connected to the lower electrode, and a power supply for supplying power to the lower electrode via the matcher includes an electrostatic chuck electrode provided within the lower electrode to hold the sample, and a voltage measurement circuit provided within the lower electrode to measure a voltage at the electrostatic chuck electrode and output the measured voltage as a DC voltage.
摘要翻译：一种等离子体处理装置，包括真空容器，设置在真空容器中以将样品置于其上的下电极，连接到下电极的匹配器和用于经由匹配器向下电极供电的电源包括静电卡盘电极设置在下电极内以保持样品，以及电压测量电路，设置在下电极内，以测量静电卡盘电极处的电压，并将测得的电压输出为直流电压。

67. 发明申请

US20070181254A1 Plasma processing apparatus with resonance countermeasure function 审中-公开
标题翻译：具有共振对策功能的等离子体处理装置
公开(公告)号：US20070181254A1
公开(公告)日：2007-08-09
申请号：US11362177
申请日：2006-02-27
申请人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
发明人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32082
摘要： A plasma processing apparatus has a processing chamber connected to an exhaust system so that the inside pressure can be reduced, a gas feeding unit for supplying gas to the processing chamber, a wafer, and a substrate electrode on which the wafer can be placed. The plasma processing apparatus also has an antenna electrode provided in opposition to the substrate electrode to generate plasma, a plasma generating high-frequency power supply connected to the antenna electrode, and a wafer biasing power supply connected to the substrate electrode. In addition, a coaxial line and a coaxial waveguide are optimized by using a coaxial model, and a voltage measuring circuit is mounted right under the coaxial line.
摘要翻译：等离子体处理装置具有连接到排气系统的处理室，从而可以减小内部压力，用于向处理室供应气体的气体供给单元，晶片和可以放置晶片的基板电极。等离子体处理装置还具有与基板电极相对设置的天线电极以产生等离子体，连接到天线电极的等离子体产生高频电源以及连接到基板电极的晶片偏置电源。另外，同轴线和同轴波导通过使用同轴型号进行优化，电压测量电路安装在同轴线的正下方。

68. 发明申请

US20060113037A1 Plasma processing apparatus and method for controlling the same 审中-公开
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US20060113037A1
公开(公告)日：2006-06-01
申请号：US11036097
申请日：2005-01-18
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： H01L21/306 , C23F1/00 , C03C15/00
CPC分类号： H01J37/32165 , C23F4/00 , H01J37/32082
摘要： The invention provides a plasma processing apparatus that realizes a most suitable inner environment of a vacuum vessel for each process. A plasma processing apparatus comprises a vacuum vessel 1, a first RF power supply 4, a second RF power supply 21, a third RF power supply 25, a first electrode 2 disposed within the vacuum vessel to which is supplied a mixture of a first RF voltage from the first RF power supply and a third RF voltage from the third RF power supply, a second electrode 14 disposed within the vacuum vessel to which is supplied a second RF voltage from the second RF power supply and having an upper surface mounting a sample 12, and a phase control unit 26 for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of equal frequency, and the apparatus further comprises a first phase detecting means 32 for detecting the phase of the third RF voltage of the first electrode and a second phase detecting means 31 for detecting the phase of the second RF voltage of the second electrode, and based on the output of the first and second phase detecting means, controls the phase difference of the second and third RF voltages.
摘要翻译：本发明提供了一种等离子体处理装置，其实现了用于每个处理的真空容器的最合适的内部环境。等离子体处理装置包括真空容器1，第一RF电源4，第二RF电源21，第三RF电源25，设置在真空容器内的第一电极2，供给第一RF 来自第一RF电源的电压和来自第三RF电源的第三RF电压，设置在真空容器内的第二电极14，第二RF电源从第二RF电源提供第二RF电压，并具有安装样品的上表面 12，以及用于控制第二和第三RF电压的相位差的相位控制单元26，其中第二和第三RF电压具有相同的频率，并且该装置还包括第一相位检测装置32，用于检测第一电极的第三RF电压和用于检测第二电极的第二RF电压的相位的第二相位检测装置31，并且基于第一和第二相位检测器 ng装置控制第二和第三RF电压的相位差。

69. 发明申请

US20060042757A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20060042757A1
公开(公告)日：2006-03-02
申请号：US10927095
申请日：2004-08-27
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

70. 发明申请

US20060000800A1 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units 审中-公开
标题翻译：等离子体处理装置中的过程监视方法，监视单元以及使用监视单元的样本处理方法
公开(公告)号：US20060000800A1
公开(公告)日：2006-01-05
申请号：US11213770
申请日：2005-08-30
申请人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
发明人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L22/34 , C23C16/50 , C23C16/52 , G01N21/73 , H01J37/32935 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of measuring an intensity of light emitted from a light-emitting diode in the vacuum vessel, at the outside of the vacuum vessel, and monitoring a status of the plasma in accordance with the measured intensity of the light.
摘要翻译：一种用于通过将气体引入真空容器并在真空容器中产生等离子体来处理样品的样品处理方法。样品处理方法包括以下步骤：测量从真空容器中的发光二极管在真空容器的外部发射的光的强度，并根据所测量的光强度监测等离子体的状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式