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61. 发明申请

US20080260943A1 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US20080260943A1
公开(公告)日：2008-10-23
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

62. 发明申请

US20080212243A1 AP1 layer for TMR device 有权
标题翻译： AP1层用于TMR设备
公开(公告)号：US20080212243A1
公开(公告)日：2008-09-04
申请号：US12152040
申请日：2008-05-12
申请人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01F41/303 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
摘要翻译：通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

63. 发明授权

US07320169B2 Self-pinned GMR structure by annealing 失效
标题翻译：通过退火自固定GMR结构
公开(公告)号：US07320169B2
公开(公告)日：2008-01-22
申请号：US10846406
申请日：2004-05-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
IPC分类号： G11B5/31 , G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/304 , Y10T29/49044
摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
摘要翻译：在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

64. 发明申请

US20060196039A1 Novel abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的新型对接交换偏置设计
公开(公告)号：US20060196039A1
公开(公告)日：2006-09-07
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

65. 发明申请

US20060153978A1 Tunneling magneto-resistive spin valve sensor with novel composite free layer 有权
公开(公告)号：US20060153978A1
公开(公告)日：2006-07-13
申请号：US11034113
申请日：2005-01-12
申请人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
IPC分类号： B05D5/12 , B05D7/00
CPC分类号： H01F41/303 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L43/10
摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

66. 发明申请

US20060132989A1 Novel hard bias design for sensor applications 有权
公开(公告)号：US20060132989A1
公开(公告)日：2006-06-22
申请号：US11016507
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

67. 发明授权

US06870711B1 Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices 失效
标题翻译：在CIP / CPP GMR和MTJ器件中用于反平行钉扎层的双层间隔物
公开(公告)号：US06870711B1
公开(公告)日：2005-03-22
申请号：US10863406
申请日：2004-06-08
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/39 , Y10T29/49044
摘要： A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.
摘要翻译：发现适用于CIP或CPP GMR传感器，TMR传感器或MRAM元件的AP1 /耦合双层/ AP2 / AFM的钉扎/钉扎层配置具有改善的磁稳定性，产生良好的值 dR / R，并且具有高的饱和磁化值，可以调节以满足磁场退火的要求。耦合双层是Ru / Rh或其合金层，其通过改变Ru层或Rh层的厚度来提供宽范围的耦合强度。

68. 发明授权

US06345435B1 Method to make laminated yoke for high data rate giant magneto-resistive head 失效
标题翻译：用于高数据速率巨磁阻头的叠片磁轭的方法
公开(公告)号：US06345435B1
公开(公告)日：2002-02-12
申请号：US09443448
申请日：1999-11-22
申请人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
发明人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
IPC分类号： G11B542
CPC分类号： G11B5/59683 , G11B5/4813 , G11B5/5521 , Y10T29/49044 , Y10T29/49046
摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.
摘要翻译：一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。

69. 发明授权

US08728825B2 GMR sensor stripe for a biosensor with enhanced sensitivity 有权
标题翻译： GMR传感器条带用于具有增强灵敏度的生物传感器
公开(公告)号：US08728825B2
公开(公告)日：2014-05-20
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N27/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

70. 发明授权

US08484830B2 Method of manufacturing a CPP structure with enhanced GMR ratio 有权
标题翻译：制造具有增强的GMR比的CPP结构的方法
公开(公告)号：US08484830B2
公开(公告)日：2013-07-16
申请号：US13065966
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/187 , G11B5/23
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。此后，与侧壁相邻地形成电介质层。

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