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    • 66. 发明授权
    • Production method of semiconductor device and semiconductor device
    • 半导体器件和半导体器件的制造方法
    • US08288184B2
    • 2012-10-16
    • US12741852
    • 2008-10-14
    • Michiko TakeiYutaka TakafujiYasumori FukushimaKazuhide TomiyasuSteven Roy Droes
    • Michiko TakeiYutaka TakafujiYasumori FukushimaKazuhide TomiyasuSteven Roy Droes
    • H01L21/00
    • H01L27/1266H01L21/31053H01L21/76819H01L27/1214H01L29/66772
    • A production method for producing a semiconductor device capable of improving surface flatness and suppressing a variation in electrical characteristics of the semiconductor chip, and improving production yield. The production method includes the steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer.
    • 一种能够提高表面平坦性并抑制半导体芯片的电气特性的变化的半导体装置的制造方法,提高制造成品率。 该制造方法包括以下步骤:在半导体衬底上形成第一绝缘膜和形成在半导体衬底上的导电图案膜上,通过图案化在导电图案膜布置的区域中减小第一绝缘膜的厚度; 形成第二绝缘膜并抛光第二绝缘膜,从而形成平坦化膜; 通过平坦化的膜将用于裂解的物质注入到半导体衬底中,从而形成裂解层; 将半导体芯片转印到具有绝缘表面的基板上,使得与半导体基板相对的一侧的芯片表面附着在其上; 并将半导体衬底与解理层分离。