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61. 发明专利

JPH06342769A ETCHING METHOD AND DEVICE 失效
公开(公告)号：JPH06342769A
公开(公告)日：1994-12-13
申请号：JP22241592
申请日：1992-08-21
申请人： NISSIN ELECTRIC CO LTD
发明人： MITSUTA YOSHIE , MURAKAMI HIROSHI , HAYASHI TSUKASA , KUWABARA SO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable to a work to be protected against side etching and enhanced in etching shape controllability, etching rate, and plane uniformity by a method wherein etching gas is turned into plasma by applying a pulse-modulated high-frequency voltage. CONSTITUTION:A tray 9 fitted with a substrate 8 on which an etched thin film is formed is mount on an electrode 4, and etching gas is introduced into a chamber 1 from a gas source 5 as the chamber 1 is exhausted to a prescribed pressure. A pulse-modulated high-frequency voltage is applied to etching gas by a power supply 7 to turn it into plasma, and the etched thin film on the substrate 8 is expose to plasma. As a pulse-modulated high-frequency voltage is applied to etching gas to make it high in ionization rate, the vacuum chamber 1 can be reduced to a lower pressure than a conventional one, and consequently ions are enhanced in mean free path due to a reduction in gas pressure, and etching high in anisotropy can be carried out. As etching gas has a high ionization rate, an etching operation can be carried out with high plane uniformity at a high etching rate.

62. 发明专利

JPH06291060A THIN-FILM FORMATION METHOD 失效
公开(公告)号：JPH06291060A
公开(公告)日：1994-10-18
申请号：JP9673193
申请日：1993-03-30
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： C23C16/50 , C23C16/515 , H01L21/205
摘要： PURPOSE:To improve the control of the composition ratio of a film, the suppression of particles, and film formation speed. CONSTITUTION:A plurality of types of feed gases 24 are pulsationally supplied inside a vacuum container 4 while the phases are shifted between the feed gases 24. Also, a high-frequency power is pulsationally supplied between a high-frequency electrode 6 and a ground electrode 8 from a high-frequency power supply 26a in synchronization with the feed gas 24 to be supplied pulsationally so that the level of the pulsive high-frequency power differs between at least two types of feed gases 24.

63. 发明专利

JPH06160853A COLOR LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH06160853A
公开(公告)日：1994-06-07
申请号：JP33541792
申请日：1992-11-19
申请人： NISSIN ELECTRIC CO LTD
发明人： ASAGI NORIO , KUWABARA SO , DOI AKIRA
IPC分类号： G02B6/00 , G02B6/02 , G02B6/04 , G02F1/1335 , G02F1/13357 , G02B6/10
摘要： PURPOSE:To provide a color liquid crystal display device capable of accomplishing a color display without using a color filter which causes the lowering of brightness and then compatibly accomplishing the brightness and the saving of power consumption. CONSTITUTION:The device is provided with the so-called monochromatic liquid crystal panel 30, many 1st to 3rd optical fibers 40a to 40c provided with condenser lens separately arranged behind and along each picture element train of the panel, and the device is also provided with a white light source for making white light incident on all of the optical fibers 40a to 40c provided with condenser lens from one end side of each fiber. Respective optical fibers 40a to 40c provided with condenser lens emit the light made incident on one end side in a length direction and condenser lenses 42a to 42c are respectively arranged along the optical fibers 41a to 41c respectively colored in red, green and blue.

64. 发明专利

JPH05315099A METHOD FOR GENERATING RADICAL BEAM 失效
公开(公告)号：JPH05315099A
公开(公告)日：1993-11-26
申请号：JP13968592
申请日：1992-05-01
申请人： NISSIN ELECTRIC CO LTD
发明人： HAYASHI TSUKASA , KIRIMURA HIROYA , KUWABARA SO
IPC分类号： H05H3/02
摘要： PURPOSE:To generate a radical beam by applying high frequency power, to which the first modulation of interrputing a high frequency of saw tooth or chopping wave and the second modulation of interrupting the high frequency by a period shorter than the first modulation are applied, relating to a discharge electrode. CONSTITUTION:A waveform generator 18 possible to generate an arbitrary waveform and a power supply 10a of including a high frequency power amplifier 20 are used. High frequency power, to which the first modulation of interrupting a high frequency of original chopping wave by a period T and the second modulation of interrputing the high frequency by a period shorter than the period T are applied, is added to a discharge electrode 6 of a radical beam source 2. An electron plays the leading role of converting energy in generated plasma 14, and the electron accelerated by an electric field collides against an ion and a neutral particle to produce various radical ions. A proportion of the various radicals is changed by electronic energy in the plasma. By control with the high frequency power of double modulating the electronic energy, selectivity is improved to increase only the necessary radical.

65. 发明专利

JPH05218010A FORMING METHOD FOR INSULATING FILM OF THIN FILM DEVICE 失效
公开(公告)号：JPH05218010A
公开(公告)日：1993-08-27
申请号：JP1919992
申请日：1992-02-04
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： C23C16/40 , C23C16/50 , H01L21/31 , H01L21/316
摘要： PURPOSE:To provide a method so as to make an insulating film which is more flat and more excellent in step coverage than traditional methods. CONSTITUTION:An insulating film of a thin film device is formed by employing plasma chemical vapor deposition(CVD) where organic silane-O3 gas is used as raw gas, and by supply O3 intermittently.

66. 发明专利

JPH05218005A FORMING METHOD FOR INSULATING FILM OF THIN FILM 失效
公开(公告)号：JPH05218005A
公开(公告)日：1993-08-27
申请号：JP1919892
申请日：1992-02-04
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： C23C16/50 , C23C16/515 , H01L21/205 , H01L21/31
摘要： PURPOSE:To form, at high speed, a more flat insulating film which is more excellent in step coverage than conventional insulating films by heating at relatively low temperatures in an insulating film forming method for a thin film device. CONSTITUTION:Plasma Chemical Vapor Deposition(CVD), where organic silane- O2 gas is used as raw gas, is employed. Transformation of raw gas into plasma is performed by impressing high frequency (B) power which has undergone pulse modulation. Together with impression by electric power, high frequency bias (C) is impressed on a substance where an insulating film is to be formed.

67. 发明专利

JPH05218004A FORMING METHOD FOR INSULATING FILM OF THIN FILM DEVICE 失效
公开(公告)号：JPH05218004A
公开(公告)日：1993-08-27
申请号：JP1919792
申请日：1992-02-04
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： C23C16/00 , C23C16/44 , C23C16/50 , C23C16/515 , H01L21/205 , H01L21/31
摘要： PURPOSE:To make a formed film smooth and flat by transforming raw material gas into plasma gas making reactive species reacting with the surface of or near a film forming substance. CONSTITUTION:Organic silane (TEOS) includes tetraethoxysilane or tetraethyl. TEOS-O2 gas is impressed continuously by high frequency (B) power of pulse modulating cycle of 500Hz at high frequencies (A) of 13.56MHz, e.g. In this way, generation and suspension of plasma are repeated. Therefore, an insulating film is formed by Chemical Vapor Deposition(CVD) which is vapor phase reaction. Furthermore, the insulating film is also formed by supplying reactive species not only from a far distant position from a film forming substance, but also from the surface of the substance and/or a position near to the substance. As a whole the formed film is excellent in step coverage, smooth and flat.

68. 发明专利

JPH0529272A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPH0529272A
公开(公告)日：1993-02-05
申请号：JP18621591
申请日：1991-07-25
申请人： NISSIN ELECTRIC CO LTD
发明人： WATANABE MASAO , NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a plasma etching device which can restrain undesirable particles from flying and attaching to an etching object. CONSTITUTION:In a plasma etching device where etching gas introduced into a vacuum chamber 1 is turned into plasma by applying a voltage to it to carry out the dry etching of an etching object 10 in the vacuum chamber 1, a cover 7 and a cover drive device 8 are provided to cover the etching object just before or after a prescribed etching operation is finished while the vacuum chamber 1 is not substantially changed in degree of vacuum are provided.

69. 发明专利

JPH04124259A FORMATION OF BORON NITRIDE THIN FILM 失效
公开(公告)号：JPH04124259A
公开(公告)日：1992-04-24
申请号：JP24350890
申请日：1990-09-12
申请人： NISSIN ELECTRIC CO LTD
发明人： MIKAMI TAKASHI , NISHIYAMA SATORU , KUWABARA SO , OGATA KIYOSHI , KIRIMURA HIROYA
IPC分类号： C23C14/06 , C23C14/22
摘要： PURPOSE:To form the BN thin film essentially consisting of a c-BN structure on the surface of a base body at a low temp. by irradiating the surface of the base body with rare gaseous ions and nitrogen ions at specific irradiation energy and irradiation quantity ratio simultaneously with the vapor deposition of an evaporating material contg. boron on the surface of the base body. CONSTITUTION:An evaporating source 3 is heated in a vacuum device to deposit the evaporating material 4 contg. a boron element (B) by evaporation on the surface of the base body 2. This base body is irradiated with at least >=1 kinds of the rare gaseous ions the nitrogen ions 6b from an ion source 5 simultaneously with the above- mentioned vapor deposition. The value of this irradiation energy is set at 2KeV to 10KeV in order to more selectively form the BN thin film having the c-BN structure. The ratio of the irradiation quantity of the rare gaseous ions 6a and nitrogen ions 6b with which the base body 2 are irradiated is set in a 0.05 to 2.0 range. Further, the ratio (B/N compsn. ratio) of the number of the particles of the boron and nitrogen in the BN thin film formed on the surface of the base body 2 is so adjusted as to be kept within a 0.5 to 7.0 range. The boron nitride(BN) thin film which consists essentially of the c-BN structure and has high hardness is formed on the base body 2 at the low temp. in this way.

70. 发明专利

JPH04124258A FORMATION OF BORON NITRIDE THIN FILM 失效
公开(公告)号：JPH04124258A
公开(公告)日：1992-04-24
申请号：JP24350790
申请日：1990-09-12
申请人： NISSIN ELECTRIC CO LTD
发明人： MIKAMI TAKASHI , NISHIYAMA SATORU , KUWABARA SO , OGATA KIYOSHI , KIRIMURA HIROYA
IPC分类号： C23C14/06 , C23C14/22 , C23C14/48
摘要： PURPOSE:To form the BN thin film essentially consisting of a c-BN structure on the surface of a base body at a low temp. by irradiating the surface of the base body with rare gaseous ions and nitrogen ions at specific irradiation energy and irradiation quantity ratio simultaneously with the vapor deposition of an evaporating material contg. boron on the surface of the base body. CONSTITUTION:An evaporating source 3 is heated in a vacuum device to deposit the evaporating material 4 contg. a boron element B by evaporation on the surface of the base body 2. This base body is irradiated with at least >=1 kinds of the rare gaseous ions 6a and the nitrogen ions 6b from an ion source 5 simultaneously with the above-mentioned vapor deposition. The value of this irradiation energy is set at 100 to 500eV in order to form the BN thin film having the extremely few damages and defects of the crystal structure. The ratio of the irradiation quantity of the rare gaseous ions 6a and nitrogen ions 6b with which the base body 2 are irradiated is set in a 0.05 to 2.0 range. Further, the ratio (B/N compsn. ratio) of the number of the particles of the boron and nitrogen in the BN thin film formed on the surface of the base body 2 is so adjusted as to be kept within a 0.5 to 3.0 range. The boron nitride (BN) thin film which consists essentially of the c-BN structure and has high hardness is formed on the base body 2 at the low temp. in this way.

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