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61. 发明授权

US07495313B2 Germanium substrate-type materials and approach therefor 有权
标题翻译：锗衬底型材料及其方法
公开(公告)号：US07495313B2
公开(公告)日：2009-02-24
申请号：US11188140
申请日：2005-07-22
申请人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
发明人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
IPC分类号： H01L27/082
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译：锗电路型结构方便。在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

62. 发明授权

US07399693B2 Semiconductor film manufacturing method and substrate manufacturing method 有权
标题翻译：半导体薄膜的制造方法和基板的制造方法
公开(公告)号：US07399693B2
公开(公告)日：2008-07-15
申请号：US10566170
申请日：2005-06-15
申请人： Yoshinobu Sekiguchi , Takao Yonehara , Makoto Koto , Masahiro Okuda , Tetsuya Shimada
发明人： Yoshinobu Sekiguchi , Takao Yonehara , Makoto Koto , Masahiro Okuda , Tetsuya Shimada
IPC分类号： H01L21/44
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.
摘要翻译：本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。

63. 发明申请

US20060120918A1 Field-effect transistor, sensor using it, and production method thereof 失效
标题翻译：场效应晶体管，使用它的传感器及其制造方法
公开(公告)号：US20060120918A1
公开(公告)日：2006-06-08
申请号：US10530549
申请日：2004-08-04
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
IPC分类号： G01N33/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

64. 发明申请

US20060028100A1 Piezoelectric structure, liquid ejecting head and manufacturing method therefor 有权
公开(公告)号：US20060028100A1
公开(公告)日：2006-02-09
申请号：US11240524
申请日：2005-10-03
申请人： Akira Unno , Takao Yonehara , Tetsuro Fukui , Takanori Matsuda , Kiyotaka Wasa
发明人： Akira Unno , Takao Yonehara , Tetsuro Fukui , Takanori Matsuda , Kiyotaka Wasa
IPC分类号： H01L41/187
CPC分类号： B41J2/1628 , B41J2/161 , B41J2/1629 , B41J2/1632 , B41J2/1646 , H01L41/0815 , H01L41/0973 , Y10T29/42 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

65. 发明授权

US06540861B2 Member separating apparatus and processing apparatus 失效
标题翻译：会员分离装置及处理装置
公开(公告)号：US06540861B2
公开(公告)日：2003-04-01
申请号：US09275305
申请日：1999-03-24
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Kazuaki Omi , Kazutaka Yanagita , Toshikazu Miyakogawa
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Kazuaki Omi , Kazutaka Yanagita , Toshikazu Miyakogawa
IPC分类号： B32B3100
CPC分类号： H01L21/67092 , H01L21/76259 , Y10T83/364 , Y10T156/1374 , Y10T156/17 , Y10T156/1922 , Y10T156/1928
摘要： This invention is to prevent a substrate from dropping when it is transferred/received to/from a separating apparatus. The support surfaces of substrate holding portions (22, 23) are made horizontal, and a substrate (21) to be separated is mounted on one substrate holding portion (22) in a horizontal state (2A). The substrate holding portions (22, 23) are pivoted about rotary shafts (26, 27), respectively, to make the support surfaces of the substrate holding portions (22, 23) vertical so that the substrate (21) is sandwiched by the substrate holding portions (22, 23) (2B). The substrate holding portions (22, 23) are rotated about rotary shafts (24, 25), respectively, and simultaneously, high-pressure, high-speed water is ejected from an ejection nozzle (28) to separate the substrate (21) into two substrates (21a, 21c). The substrate holding portions (22, 23) are pivoted about the rotary shafts (26, 27), respectively, to make the support surfaces horizontal (2C). With this arrangement, the substrate can be supported from the lower side and transferred in the horizontal state.
摘要翻译：本发明是为了防止当基板从分离装置传送/接收时掉落。衬底保持部分（22,23）的支撑表面是水平的，并且待分离的衬底（21）以水平状态（2A）安装在一个衬底保持部分（22）上。基板保持部（22,23）分别围绕旋转轴（26,27）枢转，使基板保持部（22,23）的支撑面垂直，使基板（21）夹在基板保持部（22,23）（2B）。基板保持部分（22,23）分别围绕旋转轴（24,25）旋转，并且同时从喷嘴（28）喷出高压高速水以将基板（21）分离成两个基板（21a，21c）。基板保持部分（22,23）分别围绕旋转轴（26,27）枢转以使支撑表面水平（2C）。通过这种布置，基板可以从下侧被支撑并且以水平状态传送。

66. 发明授权

US06534336B1 Production method of photoelectric conversion device, and photoelectric conversion device produced by the method 失效
标题翻译：光电转换装置的生产方法，以及通过该方法生产的光电转换装置
公开(公告)号：US06534336B1
公开(公告)日：2003-03-18
申请号：US09572940
申请日：2000-05-18
申请人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2100
CPC分类号： H01L31/1892 , H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , H01L31/184 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.
摘要翻译：本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。本发明还提供一种通过上述方法制造的光电转换装置。

67. 发明授权

US06436226B1 Object separating apparatus and method, and method of manufacturing semiconductor substrate 有权
标题翻译：物体分离装置和方法以及制造半导体衬底的方法
公开(公告)号：US06436226B1
公开(公告)日：2002-08-20
申请号：US09211876
申请日：1998-12-15
申请人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/6835 , B26F3/004 , H01L21/67092 , H01L2924/30105 , Y10S156/941 , Y10T29/49821 , Y10T83/364 , Y10T156/11 , Y10T156/1126 , Y10T156/1374 , Y10T156/19
摘要： An apparatus for separating a substrate having a porous layer at the porous layer is provided. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (108, 109) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (112) and injected against the bonded substrate stack (101), thereby physically separating the bonded substrate stack (101) into two substrates. The jet pressure is appropriately changed in accordance with progress of separation processing.
摘要翻译：提供了一种用于在多孔层处分离具有多孔层的基板的装置。具有多孔层（101b）的键合衬底叠层（101）在旋转的同时由衬底保持部（108,109）支撑。从喷嘴（112）喷出高速，高压水（射流）并喷射到键合衬底叠层（101）上，从而将键合衬底叠层（101）物理分离成两个衬底。喷射压力根据分离处理的进行适当地改变。

68. 发明授权

US06427747B1 Apparatus and method of separating sample and substrate fabrication method 失效
标题翻译：分离样品和底物制备方法的装置和方法
公开(公告)号：US06427747B1
公开(公告)日：2002-08-06
申请号：US09096285
申请日：1998-06-11
申请人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： H01L2100
CPC分类号： H01L21/67092 , Y10S134/902 , Y10T156/1939
摘要： An apparatus for separating a substrate having a porous layer from the porous layer is provided. A bonded substrate stack having a porous layer is supported by substrate holders while being rotated. A jet nozzle ejects a high-speed, high-pressure liquid or water. The jet thrusts into the bonded substrate through a guide unit. The position in the x-axis direction of this guide unit is adjusted by a motor such that the jet is concentrated into the bonding interface of the bonded substrate stack.
摘要翻译：提供了一种用于从多孔层分离具有多孔层的基板的装置。具有多孔层的键合衬底叠层在旋转的同时由衬底保持器支承。喷嘴喷出高速高压液体或水。射流通过引导单元推入粘合基片。该引导单元的x轴方向的位置由马达进行调节，使得射流集中到键合衬底叠层的接合界面。

69. 发明授权

US06309505B1 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US06309505B1
公开(公告)日：2001-10-30
申请号：US09037479
申请日：1998-03-10
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： B65G4907
CPC分类号： H01L21/68728 , H01L21/67092 , Y10T29/53191 , Y10T156/1744
摘要： One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.
摘要翻译：将一个晶片放置在晶片支撑台上，其前侧面向上，另一个晶片被其前侧朝上的晶片卡盘部分卡住。晶片卡盘部分围绕轴枢转大约180°以使两个晶片彼此面对大致平行。响应于通过晶片卡盘部分取消上晶片的夹持，上晶片的中心部分被压针按压以叠加两个晶片。

70. 发明授权

US06306729B1 Semiconductor article and method of manufacturing the same 有权
标题翻译：半导体制品及其制造方法
公开(公告)号：US06306729B1
公开(公告)日：2001-10-23
申请号：US09219748
申请日：1998-12-23
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L2176
CPC分类号： H01L21/2007 , H01L21/76259
摘要： A method of manufacturing a semiconductor article comprises forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding the first article and a second article so as to produce a multilayer structure having the porous layer in the inside thereof, and separating the multilayer structure along the porous layer.
摘要翻译：一种制造半导体产品的方法包括：形成含有能够至少在半导体衬底的一个表面上控制导电类型的元件的掺杂层，将掺杂层的表面修改为多孔状态以获得多孔层更薄在所述多孔层上形成无孔层以制备第一制品，将所述第一制品和第二制品接合以产生其内部具有所述多孔层的多层结构，并且分离所述多层结构体沿多孔层。

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