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61. 发明专利

JP2000223903A MICROWAVE CIRCUIT 失效
公开(公告)号：JP2000223903A
公开(公告)日：2000-08-11
申请号：JP2540299
申请日：1999-02-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIEDA MORISHIGE , TANIGUCHI EIJI , ARIGA HIROSHI , SUEMATSU KENJI , TAKAGI SUNAO
IPC分类号： H01P1/185 , H01P1/15 , H03H7/20
摘要： PROBLEM TO BE SOLVED: To suppress amplitude variation by preventing unnecessary resonance from being generated in a frequency band of a passing high-frequency signal. SOLUTION: The circuit is equipped with two SPDT switches 31 and 32 which switch two terminals and select one of them, two lines 21 and 22 which are switched by the SPDT switches 31 and 32 and different in electric length from each other, and an SPST switch 40 which has one terminal connected to the connection point between partial lines 21a and 21b formed by dividing the line and the other terminal grounded. The electric length of the partial lines positioned at both ends of the line 21 is set smaller than λg/4 (λg: wavelength of a high-frequency signal on the line) and the electric length of the other partial line is set smaller than λg/2.

62. 发明专利

JP2000188520A PHASE SHFITER 失效
公开(公告)号：JP2000188520A
公开(公告)日：2000-07-04
申请号：JP36569398
申请日：1998-12-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANIGUCHI EIJI , HIEDA MORISHIGE , TAKAGI SUNAO , IYAMA YOSHITADA
IPC分类号： H01Q3/36 , H03H7/20
摘要： PROBLEM TO BE SOLVED: To dissolve the unnecessary attenuation of a high frequency signal and to improve the setting resolution of a phase by opening/closing a switch in accordance with a signal inputted from a control terminal and connecting an inductive circuit supplying the high frequency signal to an output terminal at a phase different from the switch between an input terminal and the output terminal in parallel to the switch. SOLUTION: When a control signal which on-controls a field effect transistor 2 is inputted from a control pad 8, the field effect transistor 2 shorts both ends of a bypass wiring 7. The high frequency signal of a prescribed frequency, which is inputted from an input pad 3, is outputted from an output pad 5 through an input wiring, the field effect transistor 2 and an output wiring 6. When the control signal for on-controlling the field effect transistor 2 is inputted from the control pad 8, a part between a source terminal and a drain terminal becomes an open state and the field effect transistor 2 operates as a capacitive element.

63. 发明专利

JPH11355055A DISTORTION COMPENSATING CIRCUIT AND LOW DISTORTION SEMICONDUCTOR AMPLIFIER 失效
公开(公告)号：JPH11355055A
公开(公告)日：1999-12-24
申请号：JP15624398
申请日：1998-06-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAUCHI KAZUHISA , MORI KAZUTOMI , NAKAYAMA MASATOSHI , TAKAGI SUNAO
IPC分类号： H03H7/18 , H03F1/32
摘要： PROBLEM TO BE SOLVED: To provide a reduced distortion compensation amount suitable for making into a monolythic configuration by connecting a circuit, to which a resistor and a DC power source are serially connected, and a circuit, to which a diode biased in a prescribed direction is serially connected, parallelly to a signal path between an input terminal and an output terminal and serially connecting capacitors on the input side and output side of that signal path. SOLUTION: The circuit, to which a resistor 3 and a DC power source 7 are serially connected, and the circuit, to which a circuit provided with at least one of inductors 4 and 5 and a diode 6 biased forward are serially connected, are respectively parallelly connected to the signal path between an input terminal 8 and an output terminal 9. Then, capacitors 1 and 2 are serially connected on the input side and output side of that signal path. Thus, the distortion compensating circuit is constituted for reducing amplitude phase distortion by having characteristics inverse to the amplitude characteristics of an amplifier connected to the preceding or following step.

64. 发明专利

JPH11355015A POWER DISTRIBUTION CIRCUIT, POWER COMBINING CIRCUIT AND AMPLIFIER 失效
公开(公告)号：JPH11355015A
公开(公告)日：1999-12-24
申请号：JP15781398
申请日：1998-06-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： UEDA HIROYUKI , MORI KAZUTOMI , TAKAGI SUNAO
IPC分类号： H01P5/19 , H03F3/60 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To suppress loop oscillation, to attenuate the pass gain in a specified frequency and to provide an amplifier of stable high output. SOLUTION: An amplifier where a plurality of amplification elements 3 and 4 are combined in parallel has an isolation circuit 22 constituted of one line 24 and two resistors 23 and 25 connected to its both ends. A power distribution circuit 2A distributing signals inputted to an input terminal 1 to a plurality of amplification elements and a power combining circuit 5A putting together the outputs of a plurality of amplification elements are installed.

65. 发明专利

JPH11354709A SEMICONDUCTOR DEVICE AND AMPLIFIER 失效
公开(公告)号：JPH11354709A
公开(公告)日：1999-12-24
申请号：JP15624498
申请日：1998-06-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： MORI KAZUTOMI , UEDA HIROYUKI , TAKAGI SUNAO
IPC分类号： H01L23/52 , H01L21/822 , H01L27/04 , H03F1/10
摘要： PROBLEM TO BE SOLVED: To increase the isolation between the input-output pads of a plurality of semiconductor elements having opposite inputting-outputting directions by arranging the elements in parallel on a semiconductor substrate and providing a plurality of grounding lines between the elements. SOLUTION: An HBT(heterojunction bipolar transistor) 15 for preceding stage and an HBT 18 for succeeding stage the inputting-outputting direction of which is opposite to that of the HBT 15 are arranged in parallel on a semiconductor substrate 1A. Then a plurality of grounding lines 21 are arranged between the HBTs 15 and 18. The signal inputted to the input pad 16 of the HBT 15 is amplified and the amplified signal is inputted to the HBT 18 from the output pad 17 of the HPT 15 through the input pad 19 of the HBT 18. Then the signal inputted to the HBT 18 is again amplified and the amplified signal is outputted from the output pad 20 of the HBT 18. Therefore, the oscillation which occurs in a closed loop can be suppressed.

66. 发明专利

JPH11103205A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11103205A
公开(公告)日：1999-04-13
申请号：JP26304897
申请日：1997-09-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： HORIGUCHI KENICHI , MORI KAZUTOMI , NAKAYAMA MASATOSHI , TAKAGI SUNAO
IPC分类号： H01P5/08 , H03F3/60 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of fixing route length from plural input pads of an FET up to a resistor in a stabilizing circuit which acts as a parallel resistor and equally driving the FET. SOLUTION: A thin film resistor 5 acting as a parallel resistor with an FET 4 is formed on the FET side of a microstrip line pattern of an input line which constitutes an input matching circuit so as to have width equal to that of the pattern. Input line patterns on both the end parts of the resistor 5 in the input line direction are formed as electrode parts, plural wires 23 are connected in parallel between plural input pads of the FET 4 and the FET side electrode parts of the resistors on the pattern over the resistor 5, capacitors 6 grounded on their one sides are formed in the vicinities of both the sides of the FET side ends of the pattern and wires 24 are connected between the counter ground side electrodes of respective capacitors 6 and the FET side end electrode parts of the resistor 5.

67. 发明专利

JP2536643B2 失效
公开(公告)号：JP2536643B2
公开(公告)日：1996-09-18
申请号：JP34105489
申请日：1989-12-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOYOSHIMA HAJIME , IKEDA YUKIO , SUEMATSU KENJI , ISODA YOJI , TAKAGI SUNAO , URASAKI SHUJI
IPC分类号： H03F1/02 , H03F3/193

68. 发明专利

JPH05291851A 失效
公开(公告)号：JPH05291851A
公开(公告)日：1993-11-05
申请号：JP11539192
申请日：1992-04-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA YUKIO , NAKAYAMA MASATOSHI , ISODA YOJI , TAKAGI SUNAO
IPC分类号： H03F3/193 , H01P5/08 , H01P5/12 , H03F3/21 , H03F3/60 , H03F3/68
摘要： PURPOSE:To obtain the high-output semiconductor amplifier with a high output whose impedance is matched over a broad band. CONSTITUTION:A power distributer 10 of the high output semiconductor amplifier using the power distributer 10 having an impedance conversion function distributes input power into plural FETs 31-3n and outputs of the FETs 31-3n are synthesized by a power combiner 20 having an impedance conversion function consists of plural distribution lines 71-7n whose one terminal connects to input terminals of the FETs 31-3n and series resistors 61-6n connected in series with the distribution lines 71-7n and whose one terminal connects to an input terminal 1 of the power distributer 10.

69. 发明专利

JPH0577211B2 失效
公开(公告)号：JPH0577211B2
公开(公告)日：1993-10-26
申请号：JP20420486
申请日：1986-08-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KYONO KYOHARU , TAKAGI SUNAO
IPC分类号： H03F3/60 , H03F3/68

70. 发明专利

JPH0514081A FIELD EFFECT TRANSISTOR AMPLIFIER 失效
公开(公告)号：JPH0514081A
公开(公告)日：1993-01-22
申请号：JP15830991
申请日：1991-06-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO YASUYUKI , TAKAGI SUNAO
IPC分类号： H03F1/42 , H03F3/60
摘要： PURPOSE:To realize a FET amplifier with a broad microwave band. CONSTITUTION:The field effect transistor amplifier is featured to be provided with a series circuit having a resistor and a parallel resonance circuit comprising an open stub 5 and a short-circuit stub 6 whose length is respectively 1/8 wavelength connected between a gate terminal of a FET 1 and ground via an inductor, or provided with a parallel circuit comprising a series circuit comprising a resistor and the open stub 5 whose length is 1/8 wavelength and a series circuit comprising a resistor and the short-circuit stub 6 whose length is 1/8, wavelength via an inductor connected in series with the gate terminal.

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