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    • 62. 发明授权
    • System and method for dual-sided sputter etch of substrates
    • 用于衬底双面溅射蚀刻的系统和方法
    • US08784622B2
    • 2014-07-22
    • US12329447
    • 2008-12-05
    • Michael S. BarnesTerry Bluck
    • Michael S. BarnesTerry Bluck
    • C23C14/00C25B11/00C25B13/00C23F1/00
    • G11B5/84G11B5/855H01J37/3438
    • A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.
    • 提供用于蚀刻图案化介质盘的系统。 利用可移动非接触电极进行溅射蚀刻。 电极移动到与衬底接近但不接触的接触距离,以将RF能量耦合到盘。 待蚀刻的材料可以是金属,例如Co / Pt / Cr或类似的金属。 衬底垂直地保持在载体中,并且两侧被连续蚀刻。 也就是说,在一个室中蚀刻一面,然后在下一个室中蚀刻第二面。 隔离阀设置在两个腔室之间,圆盘托架使腔室间移动。 载体可以是线性驱动载体,使用例如磁化轮和线性马达。
    • 69. 发明申请
    • PROCESS FOR OPTIMIZATION OF ISLAND TO TRENCH RATIO IN PATTERNED MEDIA
    • 优化岛屿以优化媒体比例的方法
    • US20100237042A1
    • 2010-09-23
    • US12730147
    • 2010-03-23
    • Houng T. NguyenRen XuMichael S. Barnes
    • Houng T. NguyenRen XuMichael S. Barnes
    • G11B5/84
    • G11B5/855
    • A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.
    • 具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现,该蚀刻室线性地并且彼此隔离,导致图案化介质的岛与沟槽比的优化。 使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。 对磁性层进行惰性气体溅射蚀刻,得到盘上图案化的磁性层。 然后进行剥离的最后一步,以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。 可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。 可能调整的相关工艺条件包括:压力,偏压,时间和每一步中的气体类型。
    • 70. 发明申请
    • SYSTEM AND METHOD FOR DUAL-SIDED SPUTTER ETCH OF SUBSTRATES
    • 基板双面溅射管的系统与方法
    • US20090145881A1
    • 2009-06-11
    • US12329447
    • 2008-12-05
    • Michael S. BarnesTerry Bluck
    • Michael S. BarnesTerry Bluck
    • B44C1/22C23F1/08
    • G11B5/84G11B5/855H01J37/3438
    • A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.
    • 提供了用于蚀刻图案化介质盘的系统。 利用可移动非接触电极进行溅射蚀刻。 电极移动到与衬底接近但不接触的接触距离,以将RF能量耦合到盘。 待蚀刻的材料可以是金属,例如Co / Pt / Cr或类似的金属。 衬底垂直地保持在载体中,并且两侧被连续蚀刻。 也就是说,在一个室中蚀刻一面,然后在下一个室中蚀刻第二面。 隔离阀设置在两个腔室之间,圆盘托架使腔室间移动。 载体可以是线性驱动载体,使用例如磁化轮和线性马达。