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    • 62. 发明授权
    • Piezoelectric film element using (Na,K,Li)NbO3
    • 使用(Na,K,Li)NbO 3的压电薄膜元件
    • US08581477B2
    • 2013-11-12
    • US13018693
    • 2011-02-01
    • Kazufumi SuenagaKenji ShibataKazutoshi WatanabeAkira Nomoto
    • Kazufumi SuenagaKenji ShibataKazutoshi WatanabeAkira Nomoto
    • H01L41/047H01L41/187
    • H01L41/187H01L41/0477H01L41/0805H01L41/094H01L41/1873H01L41/29H01L41/316
    • A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
    • 提供一种能够改善压电性能的压电膜元件,其在基板上至少具有下电极,无铅压电膜和上电极,其中至少下电极中的下电极和 上电极具有立方晶系,四方晶系,正交晶系,六方晶系,单斜晶系,三斜晶系,三
      晶体系的晶体结构,或其组成为: 这些晶体存在或其中的两种以上共存,并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴,并且将比率c / a'设定在0.992的范围内 以上且0.999以下,即与法线的方向相对于基板表面的晶格间距c的比例,相对于晶格间距a',其倾斜角为 基板表面的厚度在10°以上且30°以下的范围内。
    • 65. 发明申请
    • INTERMEDIATE COMPOUND FOR SYNTHESIZING PHARMACEUTICAL AGENT AND PRODUCTION METHOD THEREOF
    • 用于合成药物代理的中间体化合物及其生产方法
    • US20120059165A1
    • 2012-03-08
    • US13255748
    • 2010-03-09
    • Rikizou FuruyaHiroki OzawaEiji ToyofukuShinichi KusakaHiroshi IwamuraDaiki SakaiKazuki NakayamaKazutoshi Watanabe
    • Rikizou FuruyaHiroki OzawaEiji ToyofukuShinichi KusakaHiroshi IwamuraDaiki SakaiKazuki NakayamaKazutoshi Watanabe
    • C07D413/10C07D413/14
    • C07D413/10C07D413/14
    • A production method of an optically active 2-{4-(5-substituted-oxadiazolyl) phenyl}morpholine which is useful as an intermediate for synthesizing a pharmaceutical agent is provided and the method comprises the following steps 1) to 4): 1) reacting a bromophenylmorpholine with a hexacyanoferrate(II) or a hydrate thereof at a temperature of from 110° C. to 140° C. in a reaction mixture comprising a Na2CO3, an organophosphorus compound, and a palladium catalyst in a polar aprotic solvent alone or combination of a polar aprotic solvent and other polar aprotic solvent or hydrocarbon solvent to give a cyanophenylmorpholine; 2) reacting the cyanophenylmorpholine with hydroxylamine or hydroxylamine hydrochloride at a temperature of from 10° C. to 40° C. in an aprotic polar solvent to give a hydroxylamine derivative; 3) reacting the hydroxylamine derivative with an acylation reagent selected from the group consisting of aliphatic acyl halides, aromatic acyl halides, aliphatic acyl anhydrides and aromatic anhydrides; and 4) keeping the mixture obtained after step 3) at a temperature of from 60° C. to 140° C. to give a 2-{4-(5-substituted-oxadiazolyl) phenyl}morpholine.
    • 提供了可用作合成药剂的中间体的光学活性2- {4-(5-取代 - 恶二唑基)苯基}吗啉的制备方法,该方法包括以下步骤1)至4):1) 在包含Na 2 CO 3,有机磷化合物和钯催化剂的反应混合物中,在单极极性非质子溶剂中使溴苯基吗啉与​​六氰基铁酸盐(II)或其水合物在110℃至140℃的温度下反应,或 极性非质子溶剂和其他极性非质子溶剂或烃溶剂的组合,得到氰基苯基吗啉; 2)使氰基苯基吗啉与​​羟胺或羟胺盐酸盐在非质子极性溶剂中在10℃至40℃的温度下反应,得到羟胺衍生物; 3)使羟胺衍生物与选自脂族酰基卤,芳族酰基卤,脂族酰基酸酐和芳族酸酐的酰化试剂反应; 和4)将步骤3)后获得的混合物保持在60℃至140℃的温度下,得到2- {4-(5-取代 - 恶二唑基)苯基}吗啉。
    • 67. 发明申请
    • Nitride semiconductor sustrate and method of fabricating the same.
    • 氮化物半导体衬底及其制造方法。
    • US20100096728A1
    • 2010-04-22
    • US12585109
    • 2009-09-03
    • Kazutoshi WatanabeTakehiro Yoshida
    • Kazutoshi WatanabeTakehiro Yoshida
    • H01L23/58B24B1/00B24B9/06
    • B24B9/065
    • A nitride semiconductor substrate includes a front surface, a rear surface on an opposite side to the front surface, and a first edge portion including a chamfered edge on the front surface. A ratio of an average surface roughness of the front surface to an average surface roughness of the first edge portion is not more than 0.01. The substrate may include a second edge portion including a chamfered edge on the rear surface. A ratio of an average surface roughness of the rear surface to an average surface roughness of the second edge portion is not more than 0.01. The first edge portion has a visible light transmissivity not more than 0.2 times that of the front surface. The second edge portion has a visible light transmissivity not more than 0.2 times that of the rear surface.
    • 氮化物半导体衬底包括前表面,与前表面相反侧的后表面,以及在前表面上包括倒角边缘的第一边缘部分。 前表面的平均表面粗糙度与第一边缘部分的平均表面粗糙度的比率不大于0.01。 衬底可以包括在后表面上包括倒角边缘的第二边缘部分。 后表面的平均表面粗糙度与第二边缘部分的平均表面粗糙度之比不大于0.01。 第一边缘部分的可见光透射率不超过前表面的0.2倍。 第二边缘部分的可见光透射率不超过背面的0.2倍。
    • 70. 发明授权
    • Scanning probe microscope
    • 扫描探针显微镜
    • US07404313B2
    • 2008-07-29
    • US11374842
    • 2006-03-14
    • Kazutoshi Watanabe
    • Kazutoshi Watanabe
    • G01B5/28G01N13/16G01N13/20
    • G01Q60/40G01Q20/04G01Q60/30
    • A scanning probe microscope has a self-detection type probe structure including a cantilever having an electrically conductive probe at a distal end thereof, a supporting part, and a piezoresistance element whose resistance value changes depending on the deflection of the cantilever. A detector applies a predetermined voltage to the piezoresistance element and detects the value of the current passing through the piezoresistance element to detect deflection of the cantilever. A sample table mounts a sample such that a surface of the sample confronts a tip of the probe, and a moving mechanism relatively moves the sample table and the probe tip in X, Y and Z directions. A controller controls the moving mechanism to maintain a fixed distance between the probe tip and the sample surface and measures the surface shape of the sample on the basis of the detection result of the detector. A predetermined voltage is applied between the probe and the sample surface, and a measuring part operates simultaneously with the detector and measures electrical property information caused by the applied voltage.
    • 扫描探针显微镜具有自检型探针结构,其包括在其远端具有导电探针的悬臂,支撑部和耐电阻值根据悬臂的偏转而变化的压阻元件。 检测器将预定电压施加到压阻元件,并检测通过压阻元件的电流值,以检测悬臂的偏转。 样品台安装样品,使得样品的表面面对探针的尖端,并且移动机构使样品台和探针尖端在X,Y和Z方向上相对移动。 控制器控制移动机构以在探针尖端和样品表面之间保持固定的距离,并且基于检测器的检测结果测量样品的表面形状。 在探针和样品表面之间施加预定的电压,并且测量部分与检测器同时操作并测量由所施加的电压引起的电特性信息。