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61. 发明申请

US20110100811A1 Electrochemical Sensor with Diffusion Labyrinth 有权
标题翻译：带扩散迷宫的电化学传感器
公开(公告)号：US20110100811A1
公开(公告)日：2011-05-05
申请号：US12992148
申请日：2009-05-07
申请人： Rolf Eckhardt , Martin Weber
发明人： Rolf Eckhardt , Martin Weber
IPC分类号： G01N27/49
CPC分类号： G01N27/404
摘要： The invention relates to an electrochemical sensor including a housing with a chamber containing an electrolyte, at least one measuring electrode for oxygen detection, at least one counter electrode and at least one reference electrode, wherein the sensor has a two-part diffusion barrier, wherein a first part of the barrier forms a labyrinth with a second part of the barrier disposed between the measuring and the counter electrode.
摘要翻译：本发明涉及一种电化学传感器，其包括具有包含电解质的室的壳体，用于氧气检测的至少一个测量电极，至少一个对电极和至少一个参考电极，其中所述传感器具有两部分扩散阻挡层，其中屏障的第一部分形成迷宫，其中第二部分屏障设置在测量电极和对电极之间。

62. 发明授权

US07708830B2 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
标题翻译：用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置
公开(公告)号：US07708830B2
公开(公告)日：2010-05-04
申请号：US11513701
申请日：2006-08-31
申请人： Wilfried Von Ammon , Janis Virbulis , Martin Weber , Thomas Wetzel , Herbert Schmidt
发明人： Wilfried Von Ammon , Janis Virbulis , Martin Weber , Thomas Wetzel , Herbert Schmidt
IPC分类号： C30B15/10
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/1068
摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.
摘要翻译：通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到通过针对生长前沿的热通量的增长前沿。该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm -3的硅单晶，并且硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。半导体晶片与单晶分离。这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。

63. 发明申请

US20100036043A1 MOLDING COMPOUNDS WITH REDUCED ANISOTROPY REGARDING IMPACT RESISTANCE 有权
标题翻译：具有降低抗反射性的各向异性的成型化合物
公开(公告)号：US20100036043A1
公开(公告)日：2010-02-11
申请号：US12527628
申请日：2008-02-18
申请人： Martin Weber , Hans Hönl , Peter Ittemann , Werner Haensel
发明人： Martin Weber , Hans Hönl , Peter Ittemann , Werner Haensel
IPC分类号： C08L51/00 , C08L51/06
CPC分类号： C08F279/02 , C08F279/04 , C08L21/00 , C08L25/12 , C08L35/06 , C08L51/00 , C08L51/04 , C08L51/085 , C08L53/02 , C08L55/02 , C08L77/00 , C08L2205/03 , C08L2205/035 , C08L2666/02 , C08L2666/04 , C08L2666/14 , C08L2666/24
摘要： A thermoplastic molding composition, comprising the following amounts of components A, B, C, and D: a) from 3 to 91.9% by weight of one or more styrene copolymers A, b) from 3 to 91% by weight of one or more polyamides B, c) from 5 to 50% by weight of one or more graft polymers C, d) from 0.1 to 25% by weight of one or more terpolymers D, whose oligomer content is smaller than 3% by weight, and also, if appropriate, comprising, as further components, a further rubber E, an at least monofunctional anhydride F, fibrous or particulate fillers G, and also further additives H, has markedly reduced anisotropy of impact resistance.
摘要翻译：包含以下量的组分A，B，C和D的热塑性模塑组合物：a）3至91.9重量％的一种或多种苯乙烯共聚物A，b）3至91重量％的一种或多种聚酰胺B，c）5至50重量％的一种或多种接枝聚合物C，d）0.1至25重量％的一种或多种低聚物含量小于3重量％的三元共聚物D，如果合适的话，作为另外的组分，包括另外的橡胶E，至少单官能酐F，纤维或颗粒填料G以及另外的添加剂H具有显着降低的耐冲击性各向异性。

64. 发明申请

US20090317906A1 GENE SILENCING USING SENSE DNA AND ANTISENSE RNA HYBRID CONSTRUCTS COUPLED TO PEPTIDES FACILITATING THE UPTAKE INTO CELLS 审中-公开
标题翻译：使用感染DNA的基因沉默和与促进细胞摄取的肽连接的抗体RNA混合构建体
公开(公告)号：US20090317906A1
公开(公告)日：2009-12-24
申请号：US11719235
申请日：2005-11-11
申请人： Martin Weber , Ioanna Andreou , Nicole Bezay
发明人： Martin Weber , Ioanna Andreou , Nicole Bezay
IPC分类号： C12N5/06 , C07K9/00
CPC分类号： C12N15/115 , C12N15/111 , C12N15/87 , C12N2310/14 , C12N2310/321 , C12N2310/322 , C12N2310/3513 , C12N2320/32
摘要： The present invention generally relates to gene silencing using sense DNA (sDNA)-antisense RNA (aRNA) hybrids wherein the sense DNA strand is coupled to a peptide which facilitates the uptake of the hybrid into cells.
摘要翻译：本发明一般涉及使用有义DNA（sDNA） - 异义RNA（aRNA）杂交体的基因沉默，其中有义DNA链与促进杂交体进入细胞的肽偶联。

65. 发明申请

US20090275725A1 POLYSULPHONES AND POLYETHER SULPHONES WITH REDUCED YELLOW INDEX AND PROCESSES FOR THEIR PREPARATION 审中-公开
标题翻译：具有减少黄色指数的聚硅氧烷和聚醚砜及其制备方法
公开(公告)号：US20090275725A1
公开(公告)日：2009-11-05
申请号：US12306152
申请日：2007-06-13
申请人： Christian Dienes , Marco Krüger , Stefan Müssig , Jörg Erbes , Achim Stammer , Martin Weber , Karl-Heinz Wassmer , Gerhard Lange
发明人： Christian Dienes , Marco Krüger , Stefan Müssig , Jörg Erbes , Achim Stammer , Martin Weber , Karl-Heinz Wassmer , Gerhard Lange
IPC分类号： C08G75/20 , C08G75/23
CPC分类号： C08G75/20 , C08G75/23
摘要： The present invention relates to a process for the preparation of polysulfones having a yellowness index according to DIN 6167 of less than 19 and polyether sulfones having a yellowness index according to DIN 6167 of less than 30, wherein the polymerization is carried out in basic, aprotic solvents with the use of a positively conveying stirrer passing close to the wall. The present invention also relates to the polyether sulfones and polysulfones obtainable for the first time by this process and to the use of such polymers for the production of moldings, films, membranes and foams.
摘要翻译：本发明涉及一种制备根据DIN 6167的黄度指数小于19的聚砜的方法，其具有根据DIN 6167的黄度指数小于30的聚醚砜，其中聚合以碱性，非质子使用正向输送的搅拌器通过靠近壁的溶剂。本发明还涉及通过该方法首次获得的聚醚砜和聚砜以及这种聚合物用于生产模制品，膜，膜和泡沫体的用途。

66. 发明申请

US20090012222A1 LOW INDIVIDUAL COLOUR THERMOPLASTIC MOLDING COMPOSITION 审中-公开
标题翻译：低个人颜色热塑性成型组合物
公开(公告)号：US20090012222A1
公开(公告)日：2009-01-08
申请号：US12162231
申请日：2007-01-24
申请人： Wil Duijzings , Davy Roger Suwier , Martin Weber , Michel Pepers
发明人： Wil Duijzings , Davy Roger Suwier , Martin Weber , Michel Pepers
IPC分类号： C08K3/38
CPC分类号： C08L69/00 , C08K3/38 , C08L51/04 , C08L55/02 , C08L2666/24
摘要： A thermoplastic molding composition comprising A) 2.5 to 50 wt. % of a rubber modified styrenic resin; B) 50 to 97.5 wt. % of a polycarbonate resin; C) 0.001 to 1 wt. % of an inorganic boron compound; D) 0 to 25 wt. % of further polymer resins; and E) 0 to 45 wt. % additives, shows excellent thermal stability at high temperatures and impact resistance, and no thermal discolouration during processing.
摘要翻译：一种热塑性模塑组合物，其包含A）2.5至50wt。％的橡胶改性苯乙烯树脂; B）50〜97.5重量％％的聚碳酸酯树脂; C）0.001〜1重量％％的无机硼化合物; D）0-25重量份％的其他聚合物树脂; 和E）0至45wt。％添加剂，在高温下显示出优异的热稳定性和耐冲击性，并且在加工过程中不发生热变色。

67. 发明授权

US07265172B2 Polycarbonate styrene copolymer blends with improved properties 失效
标题翻译：具有改进性能的聚碳酸酯苯乙烯共聚物共混物
公开(公告)号：US07265172B2
公开(公告)日：2007-09-04
申请号：US10510478
申请日：2003-04-08
申请人： Martin Weber , Xaver Hopfenspirger , Reinhard Jakobi , Walter Heckmann
发明人： Martin Weber , Xaver Hopfenspirger , Reinhard Jakobi , Walter Heckmann
IPC分类号： C08L69/00 , C08L51/04
CPC分类号： C08L55/02 , C08F265/04 , C08L25/12 , C08L51/04 , C08L69/00 , C08L2205/035 , C08L2666/02 , C08L2666/14 , C08L2666/04
摘要： Thermoplastic molding composition comprising components A, B, C and D and, if appropriate, E, F, G and H, A) from 1 to 97.5% by weight of at least one aromatic polycarbonate A, B) from 1 to 97.5% by weight of at least one graft polymer B made from b1) from 40 to 80% by weight of a graft base made from an elastomeric polymer B1, b2) from 20 to 60% by weight of a graft B2 made from b21) from 60 to 95% by weight of styrene or of substituted styrenes B21 and b22) from 5 to 40% by weight of at least one unsaturated nitrile B22, C) from 1 to 97.5% by weight of at least one thermoplastic copolymer C made from c1) from 60 to 85% by weight of styrene or of substituted styrenes C1 or mixtures thereof and c2) from 15 to 40% by weight of at least one unsaturated nitrile C2, D) from 0.5 to 50% by weight of at least one copolymer D, obtainable via reaction of d1) from 5 to 95% by weight of at least one thermoplastic methacrylate polymer D1 containing at least one type of functional groups selected from epoxy, carboxy, hydroxy, anhydride and oxazoline, with d2) from 5 to 95% by weight of at least one thermoplastic polyester D2, E) from 0 to 40% by weight of at least one filler E, F) from 0 to 2% by weight of at least one organic acid F, G) from 0 to 25% by weight of at least one halogen-free phosphorus compound G, H) from 0 to 45% by weight of other additives H.
摘要翻译：包含组分A，B，C和D以及如果合适的话，E，F，G和H的热塑性模塑组合物，A）1至97.5重量％的至少一种芳族聚碳酸酯A，B）1至97.5％由b1）制成的至少一种接枝聚合物B的重量为40〜80重量％的由弹性体聚合物B1制成的接枝基料，b2）20〜60重量％的由b21制得的接枝体B2从60〜 95重量％的苯乙烯或取代的苯乙烯B21和b22）5至40重量％的至少一种不饱和腈B22，C）1至97.5重量％的至少一种由c1）制成的热塑性共聚物C 60至85重量％的苯乙烯或取代的苯乙烯或其混合物，c2）15至40重量％的至少一种不饱和腈C2，D）0.5至50重量％的至少一种共聚物D，可通过d1）5至95重量％的至少一种含至少一种选自以下的官能团的热塑性甲基丙烯酸酯聚合物D1 环氧基，羧基，羟基，酸酐和恶唑啉，d2）5至95重量％的至少一种热塑性聚酯D2，E）0至40重量％的至少一种填料E，F）0至 2重量％的至少一种有机酸F，G）0至25重量％的至少一种无卤素磷化合物G，H）0至45重量％的其它添加剂H.

68. 发明申请

US20070161746A1 Thermoplastic Molding Masses Made From Styrol Copolymers And Polyamides 审中-公开
标题翻译：由苯乙烯共聚物和聚酰胺制成的热塑性成型体
公开(公告)号：US20070161746A1
公开(公告)日：2007-07-12
申请号：US10586384
申请日：2005-01-15
申请人： Martin Weber
发明人： Martin Weber
IPC分类号： C08L77/00
CPC分类号： C08L55/02 , C08F279/02 , C08F279/04 , C08L25/08 , C08L25/10 , C08L25/12 , C08L25/14 , C08L51/003 , C08L51/04 , C08L77/00 , C08L77/02 , C08L77/06 , C08L2205/02 , C08L2205/03 , C08L2666/02 , C08L51/00 , C08L2666/14 , C08L2666/24
摘要： Thermoplastic molding compositions composed of A) a polyamide having amino or carboxy end groups or a mixture of these end groups, B) a mixture composed of at least two graft copolymers, each comprising a rubber as graft base and a graft based on an unsaturated monomer, where these differ at least 5% by weight from one another in their rubber contents, C) a rubber-free copolymer, comprising c1) at least 30% by weight, based on the total weight of all of the units present in C), of units which derive from a vinylaromatic monomer, c2) units which derive from a monomer which comprises a functional group which can react with the end groups of the polyamide A), and c3) units which derive from a monomer which comprises no functional groups which react with the end groups of the polyamide A), and also moreover, if desired, D) a rubber-free matrix polymer, E) a low-molecular-weight compound which comprises a dicarboxylic anhydride group, and F) an additive, or a mixture of various additives.
摘要翻译：由A）具有氨基或羧基端基的聚酰胺或这些端基的混合物组成的热塑性模塑组合物，B）由至少两种接枝共聚物组成的混合物，每种接枝共聚物包含作为接枝基质的橡胶和基于不饱和单体的接枝，其中它们的橡胶含量彼此不同至少5重量％，C）无橡胶共聚物，其包含c1）至少30重量％，基于C）中存在的所有单元的总重量，来自乙烯基芳族单体的单元，c2）衍生自包含可与聚酰胺A的端基反应的官能团的单体的单元）和c3）衍生自不含官能团的单体的单元其与聚酰胺A）的端基反应，并且如果需要，D）无橡胶基质聚合物E）包含二羧酸酐基团的低分子量化合物和F）添加剂，或各种添加剂的混合物。

69. 发明申请

US20060292890A1 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
标题翻译：用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置
公开(公告)号：US20060292890A1
公开(公告)日：2006-12-28
申请号：US11513701
申请日：2006-08-31
申请人： Wilfried Ammon , Janis Virbulis , Martin Weber , Thomas Wetzel , Herbert Schmidt
发明人： Wilfried Ammon , Janis Virbulis , Martin Weber , Thomas Wetzel , Herbert Schmidt
IPC分类号： H01L21/31
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/1068
摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.
摘要翻译：通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到通过针对生长前沿的热通量的增长前沿。该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm 3的硅单晶， -3和硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。半导体晶片与单晶分离。这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。

70. 发明授权

US07070649B2 Process for producing a silicon single crystal which is doped with highly volatile foreign substances 有权
标题翻译：用于制造掺杂有高挥发性异物的硅单晶的方法
公开(公告)号：US07070649B2
公开(公告)日：2006-07-04
申请号：US10690415
申请日：2003-10-21
申请人： Martin Weber , Peter Vilzmann , Erich Gmeilbauer , Robert Vorbuchner
发明人： Martin Weber , Peter Vilzmann , Erich Gmeilbauer , Robert Vorbuchner
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equation ΔN(t)=N0−N(t)=N0·(1−e−λa·t) or according to the approximation equation ΔN(t)=N0·λa·t where λa is an evaporation coefficient which describes process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and calculated according to the equation R(t)=R0·eλa·t, where R0 is a starting resistivity and the further single crystal is pulled under the same process conditions without being after-doped with the foreign substance.
摘要翻译：一种制造掺杂硅单晶的方法，包括在拉伸过程中用一定量的挥发性掺杂剂ΔN（t）对熔体进行后掺杂，根据方程式<？in-line-formula description =“In-Line Formulas “end =”lead“？> DeltaN（t）= N 0 -N（t）= N 0（1-e-O） > ^{a ^{.t ）<？in-line-formula description =“In-line Formulas”end =“tail”？>或根据到近似方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaN（t）= N <？in-line-formula description =“In-line Formulas”end =“tail”？>其中lambda是一个蒸发系数，它描述异物的过程特定的蒸发行为，已经根据方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> R（t）= 1）测量并计算另一单晶的电阻分布R（t） R＆lt; 0＆lt;＆lt; SU _{> .t ，<？in-line-formula description =“In-line Formulas”end =“ 尾“→其中R 0 <0>是起始电阻率，并且在相同的工艺条件下拉伸另外的单晶而不用异物进行后掺杂。}}}

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