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61. 发明授权

US07515388B2 Composite hard bias design with a soft magnetic underlayer for sensor applications 有权
标题翻译：复合硬偏置设计与传感器应用的软磁底层
公开(公告)号：US07515388B2
公开(公告)日：2009-04-07
申请号：US11016506
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏置结构由诸如NiFe的软磁性底层和由Co78.6Cr5.2Pt16.2或Co65Cr15Pt20构成的硬偏置层组成，其刚性交换耦合到确保具有最小分散度的良好对齐的纵向偏置方向。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总HC，Mrt和S值最优化的厚度。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。

62. 发明授权

US07359150B2 Self-aligned trimmed pole 失效
标题翻译：自对准修边杆
公开(公告)号：US07359150B2
公开(公告)日：2008-04-15
申请号：US11091160
申请日：2005-03-28
申请人： Cherng-Chyi Han , Mao-Min Chen , Fenglin Liu
发明人： Cherng-Chyi Han , Mao-Min Chen , Fenglin Liu
IPC分类号： G11B5/39 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/23 , G11B5/3163
摘要： A trimmed upper pole piece for a magnetic write head is presented, said pole piece having a uniform width above and below a write gap layer and said pole piece being formed on a pedestal of uniform width projecting from a planar surface of a magnetic shield layer. Prior art methods of trimming pole pieces to a final width using ion-beam etches produce pole pieces with thickness differentials due to the etch resistant nature of the typical alumina write-gap filling material. The present pole piece uses NiCr, NiFeCr or Ru as write gap filling materials because they have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and allow a uniform trimming to occur.
摘要翻译：提出了一种用于磁性写入头的修整的上极片，所述极片在写间隙层上方和下方具有均匀的宽度，并且所述极片形成在从磁屏蔽层的平坦表面突出的均匀宽度的基座上。使用离子束蚀刻将极片修剪到最终宽度的现有技术方法由于典型的氧化铝写入间隙填充材料的耐蚀刻性质而产生具有厚度差异的极片。本极极片使用NiCr，NiFeCr或Ru作为写入间隙填充材料，因为它们的蚀刻速率基本上等于形成极片的其它层的蚀刻速率，并允许发生均匀的修整。

63. 发明授权

US07320168B2 Method to improve heat dissipation in a magnetic shield 有权
标题翻译：改善磁屏蔽散热的方法
公开(公告)号：US07320168B2
公开(公告)日：2008-01-22
申请号：US10696431
申请日：2003-10-29
申请人： Cherng-Chyi Han , Rod Lee , Mao-Min Chen , Pokang Wang
发明人： Cherng-Chyi Han , Rod Lee , Mao-Min Chen , Pokang Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3136 , G11B5/3133 , Y10T29/49039 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Problems such as thermal pole tip protrusion result from thermal mismatch between the alumina and pole material during the writing process. This, and similar problems due to inadequate heat dissipation, have been overcome by dividing the bottom shield into two pieces both of which sit on top of a non-magnetic heat sink. Heat generated by the coil during writing is transferred to the non-magnetic heat sink whence it gets transferred to the substrate. With this approach, the head not only benefits from less field disturbance due to the small shield but also improves heat dissipation from the additional heat sink.
摘要翻译：在写入过程中，由于氧化铝和极材料之间的热失配，导致热极尖突出的问题。通过将底部屏蔽分成两个位于非磁性散热器顶部的两个部件，已经克服了由于不充分散热引起的这种和类似的问题。在写入期间由线圈产生的热量被传递到非磁性散热器，因为它被传送到基板。采用这种方法，由于小屏蔽，头部不但受益于较少的场干扰，还可以改善附加散热器的散热。

64. 发明授权

US07211447B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07211447B2
公开(公告)日：2007-05-01
申请号：US11080868
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.
摘要翻译：公开了一种在MRAM阵列中形成高性能MTJ的方法。溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

65. 发明申请

US20070015294A1 Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的新型结构/方法
公开(公告)号：US20070015294A1
公开(公告)日：2007-01-18
申请号：US11522663
申请日：2006-09-18
申请人： Cheng Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层）其超薄，光滑，并具有高击穿电压。在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

66. 发明申请

US20060211198A1 Novel structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：用于制造用于MRAM应用的高性能MTJ器件的新型结构和方法
公开(公告)号：US20060211198A1
公开(公告)日：2006-09-21
申请号：US11080868
申请日：2005-03-15
申请人： Cheng Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L21/336
CPC分类号： H01L43/12
摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.
摘要翻译：公开了一种在MRAM阵列中形成高性能MTJ的方法。溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层得到大于40％的dR / R和约4000欧姆 - 姆2的RA。

67. 发明授权

US07022383B2 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US07022383B2
公开(公告)日：2006-04-04
申请号：US10277477
申请日：2002-10-22
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： B05D3/06 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

68. 发明申请

US20050254293A1 Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的新型结构/方法
公开(公告)号：US20050254293A1
公开(公告)日：2005-11-17
申请号：US10844171
申请日：2004-05-12
申请人： Cheng Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： G11C11/00 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta层具有光滑的表面，并且光滑的表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层），其中具有超薄，光滑，且具有较高的击穿电压。在Ta的溅射蚀刻层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

69. 发明申请

US20050122621A1 High data rate writer with low resistance coil an short yoke 失效
标题翻译：高数据率写入器具有低电阻线圈短轭
公开(公告)号：US20050122621A1
公开(公告)日：2005-06-09
申请号：US11042487
申请日：2005-01-25
申请人： Cherng Han , Mao-Min Chen , Pokang Wang , Yimin Guo
发明人： Cherng Han , Mao-Min Chen , Pokang Wang , Yimin Guo
IPC分类号： G11B5/127 , G11B5/17 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/313 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： One of the major requirements for higher frequency extendability is to reduce yoke length and inductance in order to have fast saturation. This has been accomplished by using a design that provides a cavity in the lower pole piece inside which is located at least two coils, one on top of the other. A process for manufacturing the device is also described.
摘要翻译：更高频率可扩展性的主要要求之一是减少磁轭长度和电感以获得快速饱和。这已经通过使用在下极片中提供空腔的设计来实现，其中位于至少两个线圈之间，一个在另一个之上。还描述了用于制造该装置的方法。

70. 发明授权

US06887355B2 Self-aligned pole trim process 失效
标题翻译：自对准极修整过程
公开(公告)号：US06887355B2
公开(公告)日：2005-05-03
申请号：US10284848
申请日：2002-10-31
申请人： Cherng-Chyi Han , Mao-Min Chen , Fenglin Liu
发明人： Cherng-Chyi Han , Mao-Min Chen , Fenglin Liu
IPC分类号： G11B5/31 , C23C14/34 , B05D1/40 , B05D3/00
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/23 , G11B5/3163
摘要： A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a uniform width above and below a write gap layer. Prior art methods of trimming pole pieces to a final width using ion-beam etches produce pole pieces with thickness differentials due to the etch resistant nature of the alumina write-gap filling material. The present method uses NiCr, NiFeCr or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant.
摘要翻译：一种用于形成用于磁性写入头的修整的上极片的方法，所述极片在写间隙层上方和下方具有均匀的宽度。使用离子束蚀刻将极片修剪到最终宽度的现有技术方法由于氧化铝写入间隙填充材料的耐蚀刻性质而产生具有厚度差异的极片。本方法使用NiCr，NiFeCr或Ru作为写入间隙填充材料，其蚀刻速率基本上等于形成极片的其它层的蚀刻速率，并且具有高度耐腐蚀性。

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