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61. 发明授权

US07692323B2 Wind turbine generator system 有权
公开(公告)号：US07692323B2
公开(公告)日：2010-04-06
申请号：US12042257
申请日：2008-03-04
申请人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
发明人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
IPC分类号： H02P9/00 , H02P9/44
CPC分类号： H02P9/007 , F03D7/026 , F03D9/255 , F05B2270/337 , H02P9/10 , H02P2101/15 , Y02E10/723 , Y10T307/735
摘要： To shorten a startup interval to reach a synchronizing condition, a phase difference and an amplitude difference between the grid voltage and the stator voltage of one phase of a winding are obtained. The difference in amplitude is decreased prior to or in parallel to synchronizing the stator voltage with the grid voltage. The calculated compensation phase compensation value is used as an initial value for synchronizing at the next synchronizing operation.

62. 发明申请

US20090278354A1 Wind turbine generator system 失效
标题翻译：风力发电系统
公开(公告)号：US20090278354A1
公开(公告)日：2009-11-12
申请号：US12453312
申请日：2009-05-06
申请人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
发明人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
IPC分类号： F03D7/00 , F03D9/00
CPC分类号： F03D7/0284 , F03D9/255 , F05B2270/10711 , F05B2270/337 , H02P9/007 , H02P9/10 , H02P29/0241 , H02P29/032 , H02P2101/15 , Y02E10/72 , Y02P80/158
摘要： In a wind turbine generator system including an AC exciting converter a grid side converter, and a controller configured to control the AC-exciting converter and the grid side converter, the controller operates a short-circuiting circuit when decrease in the grid voltage and increase in the DC voltage are detected.
摘要翻译：在包括AC励磁转换器，电网侧转换器和被配置为控制AC励磁转换器和电网侧转换器的控制器的风力涡轮发电机系统中，控制器在电网电压降低时运行短路电路，并且增加检测直流电压。

63. 发明申请

US20070080369A1 Group III nitride semiconductor stacked structure and production method thereof 有权
标题翻译： III族氮化物半导体层叠结构及其制造方法
公开(公告)号：US20070080369A1
公开(公告)日：2007-04-12
申请号：US11543950
申请日：2006-10-06
申请人： Hiromitsu Sakai
发明人： Hiromitsu Sakai
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/16
摘要： An object of the present invention is to provide a group III nitride semiconductor stacked structure having a high-quality A-plane group III nitride semiconductor layer on an R-plane sapphire substrate. The inventive group III nitride semiconductor stacked structure comprises a substrate composed of R-plane sapphire (α-Al2O3), a buffer layer composed of aluminum gallium nitride (AlxGa1−xN: 0≦X≦1) formed on said substrate and an underlying layer composed of an A-plane group III nitride semiconductor (AlxGayInzN1−aMa: 0≦X≦1, 0≦Y≦1, 0≦Z≦1, and X+Y+Z=1; wherein, M represents a group V element other than nitrogen (N), and 0≦a≦1) formed on said buffer layer, wherein the pit density of the surface of said underlying layer is 1×1010 cm−2 or less.
摘要翻译：本发明的目的是提供一种在R平面蓝宝石衬底上具有高质量A面III族氮化物半导体层的III族氮化物半导体层叠结构。本发明的III族氮化物半导体层叠结构包括由R平面蓝宝石（α-Al 2 O 3 N 3）构成的衬底，由氮化镓铝（Al 形成在所述基板上的由下列层构成的基底层：由A面III族氮化物半导体构成的基底层（Al < 在＆lt; z＆gt; N＆lt; 1＆gt; 1＆lt;＆lt;＆lt;＆lt; <= 1，0 <= Y <= 1，0 <= Z <= 1，X + Y + Z = 1;其中，M表示氮（N）以外的V族元素，0 < = 1），其中所述下层的表面的凹坑密度为1×10 -2 cm -2以下。

64. 发明授权

US07095130B2 Wind turbine generator system 有权
标题翻译：风力发电系统
公开(公告)号：US07095130B2
公开(公告)日：2006-08-22
申请号：US10996645
申请日：2004-11-23
申请人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
发明人： Masaya Ichinose , Motoo Futami , Hiromitsu Sakai
IPC分类号： H02P9/00 , H02P9/46
CPC分类号： H02P9/007 , F03D7/026 , F03D9/255 , F05B2270/337 , H02P9/10 , H02P2101/15 , Y02E10/723 , Y10T307/735
摘要： To shorten a startup interval to reach a synchronizing condition, a phase difference and an amplitude difference between the grid voltage and the stator voltage of one phase of a winding are obtained. The difference in amplitude is decreased prior to or in parallel to synchronizing the stator voltage with the grid voltage. The calculated compensation phase compensation value is used as an initial value for synchronizing at the next synchronizing operation.
摘要翻译：为了缩短启动间隔以达到同步状态，获得了绕组的一相的电网电压和定子电压之间的相位差和振幅差。在使定子电压与电网电压同步之前或之后，振幅的差异减小。计算出的补偿相位补偿值用作在下一个同步操作下进行同步的初始值。

65. 发明授权

US06703874B2 Gate driver for MOS control semiconductor devices 失效
标题翻译：用于MOS控制半导体器件的栅极驱动器
公开(公告)号：US06703874B2
公开(公告)日：2004-03-09
申请号：US10436265
申请日：2003-05-13
申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
发明人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
IPC分类号： H03K300
CPC分类号： H02M1/32 , H03K17/0828 , H03K17/107
摘要： A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
摘要翻译：提供一种栅极驱动器，用于控制半导体功率转换器中的多个MOS控制半导体器件（例如IGBT或金属氧化物MOS晶体管）中的每一个的栅极电压，其中所述MOS控制半导体彼此串联连接，栅极驱动器包括在稳定导通状态时具有比每个所述MOS控制半导体器件上的栅极电位高的电位的电源线，以及用于将电流从电源线提供给每个所述MOS控制的栅极的装置半导体，当所述电源线和所述MOS控制半导体的每一个的发射极之间的电位差恒定时，以及当所述MOS控制半导体器件的集电极电压在ON时超过预定值时，增加所述MOS控制半导体器件的栅极电压 MOS控制半导体器件的状态。

66. 发明授权

US06380796B2 Semiconductor power converting apparatus 失效
标题翻译：半导体电力转换装置
公开(公告)号：US06380796B2
公开(公告)日：2002-04-30
申请号：US09838470
申请日：2001-04-20
申请人： Hiromitsu Sakai , Hidetoshi Aizawa , Shuji Katoh , Ryuji Iyotani , Masahiro Nagasu
发明人： Hiromitsu Sakai , Hidetoshi Aizawa , Shuji Katoh , Ryuji Iyotani , Masahiro Nagasu
IPC分类号： H03K17687
CPC分类号： H02M1/08 , H03K4/00 , H03K17/166 , H03K17/168
摘要： A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
摘要翻译：半导体功率转换装置包括：半导体元件，用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置，用于响应输入的驱动信号驱动栅极;电压施加装置，用于向栅极施加正向偏压和反向偏压，以将半导体元件的发射极设置为中性电位;以及分压装置，用于分割半导体元件的集电极和发射极之间的电压，其中驱动信号处于OFF状态，将通过分压装置分压的电压产生的电压施加到栅极，并且响应于集电极和发射极之间出现的电压来控制栅极电压半导体元件，从而减少缓冲损耗。

67. 发明授权

US06242968B1 Semiconductor power converting apparatus 有权
标题翻译：半导体电力转换装置
公开(公告)号：US06242968B1
公开(公告)日：2001-06-05
申请号：US09642816
申请日：2000-08-22
申请人： Hiromitsu Sakai , Hidetoshi Aizawa , Shuji Katoh , Ryuji Iyotani , Masahiro Nagasu
发明人： Hiromitsu Sakai , Hidetoshi Aizawa , Shuji Katoh , Ryuji Iyotani , Masahiro Nagasu
IPC分类号： H03K17687
CPC分类号： H02M1/08 , H03K4/00 , H03K17/166 , H03K17/168
摘要： A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
摘要翻译：半导体功率转换装置包括：半导体元件，用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置，用于响应输入的驱动信号驱动栅极;电压施加装置，用于向栅极施加正向偏压和反向偏压，以将半导体元件的发射极设置为中性电位;以及分压装置，用于分割半导体元件的集电极和发射极之间的电压，其中驱动信号处于OFF状态，将通过分压装置分压的电压产生的电压施加到栅极，并且响应于集电极和发射极之间出现的电压来控制栅极电压半导体元件，从而减少缓冲损耗。

68. 发明授权

US4353933A Method for controlling electroless plating bath 失效
标题翻译：控制化学镀浴的方法
公开(公告)号：US4353933A
公开(公告)日：1982-10-12
申请号：US204046
申请日：1980-11-04
申请人： Ken Araki , Hiromitsu Sakai , Yutaka Sugiura
发明人： Ken Araki , Hiromitsu Sakai , Yutaka Sugiura
IPC分类号： C23C18/16 , G05D21/02 , B05D1/18
CPC分类号： G05D21/02 , C23C18/1617 , C23C18/1683 , C23C18/36 , C23C18/40
摘要： A method and an apparatus for controlling an electroless plating bath such as an electroless nickel plating bath such that the bath is useable for an extended period of time without remaking are disclosed. The method comprises the steps of:continuously or intermittently measuring the concentration of at least one consumable ingredient of the electroless plating bath, andautomatically adding to the plating bath a first replenishing composition essentially consisting of the consumable ingredient after detecting that the measured value has reached a predetermined concentration; whilecontinuously or intermittently measuring one physical property of the electroless plating bath to determine the degree of aging of the bath, andautomatically discharging a predetermined volume of the plating solution and automatically adding to the plating bath a second replenishing composition containing unconsumable ingredients in an amount essentially corresponding to the lost amount by the discharging after detecting that the measured value has reached a predetermined value of the physical property.
摘要翻译：公开了一种用于控制化学镀浴的方法和装置，例如化学镀镍浴，使得浴可长时间使用而不需要重新制造。该方法包括以下步骤：连续或间歇地测量化学镀浴中至少一种可消耗成分的浓度，并且在检测到测量值已达到之后，自动向电镀槽中添加基本由消耗成分组成的第一补充组合物预定浓度; 同时连续地或间歇地测量化学镀浴的一个物理性质以确定浴的老化程度，并自动排出预定体积的镀液，并自动地向镀液中添加含有不可消耗的成分的第二补充组合物基本上对应于在检测到测量值达到物理特性的预定值之后通过放电的损失量。

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