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61. 发明申请

US20050040409A1 Semiconductor light emitting device and its manufacturing method 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050040409A1
公开(公告)日：2005-02-24
申请号：US10932697
申请日：2004-09-02
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.
摘要翻译：在使用氮化物III-V族化合物半导体的半导体激光器等半导体发光装置中，在n侧包覆层和p侧覆层之间具有活性层的结构，p侧包覆层由未掺杂或n型第一层9和p型第二层12，其从有源层更接近地远离沉积。第一层9不比50nm薄。 p型第二层12包括其中插入较大带隙的p型第三层作为电子阻挡层。因此，为了确保良好的光学性能，半导体发光器件的操作电压降低，同时保持p侧覆层的厚度。

62. 发明授权

US06836498B2 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 失效
标题翻译：半导体激光器，半导体器件和氮化物系III-V族复合衬底及其制造方法
公开(公告)号：US06836498B2
公开(公告)日：2004-12-28
申请号：US09874828
申请日：2001-06-05
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.
摘要翻译：提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

63. 发明授权

US06509579B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06509579B2
公开(公告)日：2003-01-21
申请号：US09760959
申请日：2001-01-16
申请人： Motonobu Takeya , Katsunori Yanashima , Masao Ikeda , Takeharu Asano , Shinro Ikeda , Tomonori Hino , Katsuyoshi Shibuya
发明人： Motonobu Takeya , Katsunori Yanashima , Masao Ikeda , Takeharu Asano , Shinro Ikeda , Tomonori Hino , Katsuyoshi Shibuya
IPC分类号： H01L2906
CPC分类号： H01L21/02378 , H01L21/0242 , H01L21/02422 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01S5/32341 , H01S2304/12
摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.
摘要翻译：提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度等于或小于8μm，设置在由蓝宝石制成的基板上。由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

64. 发明授权

US4790913A Method for producing an Sn-based multilayer coated steel strip having improved corrosion resistance, weldability and lacquerability 失效
标题翻译：具有改善的耐腐蚀性，焊接性和可漆性的Sn基多层涂层钢带的制造方法
公开(公告)号：US4790913A
公开(公告)日：1988-12-13
申请号：US71974
申请日：1987-07-10
申请人： Seizun Higuchi , Tomonari Oga , Masao Ikeda , Hirohumi Nakano
发明人： Seizun Higuchi , Tomonari Oga , Masao Ikeda , Hirohumi Nakano
IPC分类号： C23C22/00 , C23C22/24 , C23C28/00 , C25D3/56 , C25D5/10 , C25D5/50 , C25D11/38 , B32B15/01
CPC分类号： C25D11/38 , C25D3/562 , C25D5/10 , C25D5/505 , Y10T428/12583 , Y10T428/12611 , Y10T428/12708 , Y10T428/12722
摘要： The Sn based multilayer coated steel strip for container-use is improved by the provision of a novel underyling coating of ternary Fe-Ni-P alloy which, mainly because of the Ni component, ensures a uniform deposition of the Sn layer, and mainly because of the P and Fe contents ensure a satisfactory remaining amount of free Sn for improving the weldability. The steel strip has a thin Sn plated layer and a chromate coating layer on the underlying coating.

65. 发明授权

US08460958B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US08460958B2
公开(公告)日：2013-06-11
申请号：US13080802
申请日：2011-04-06
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

66. 发明申请

US20100044390A1 BIOCHEMICAL CONTAINER 审中-公开
标题翻译：生化容器
公开(公告)号：US20100044390A1
公开(公告)日：2010-02-25
申请号：US12513970
申请日：2007-12-05
申请人： Hayao Tanaka , Yoshihiro Abe , Masao Ikeda , Tomokazu Nakayama
发明人： Hayao Tanaka , Yoshihiro Abe , Masao Ikeda , Tomokazu Nakayama
IPC分类号： B65D43/16 , B65D43/26
CPC分类号： B01L3/50825 , B01L2200/141 , B01L2300/043 , B65D47/0842
摘要： A biochemical container is provided, which can open a cover member shutting a container member and can release a tightly sealed condition, without a need for displacing the outer edge section of the cover member. In the present invention, an opening in an end of a container member 110 is openably and closably shut by a cover member 120. When an assisting-opening member 140 is pressed from the outside in such shut condition, the stress is changed to the opening direction by the changing-direction mechanism 150 to exert over the cover member 120. Consequently, the tightly sealed condition of the cover member 120 that shuts the container member 110 can be released.
摘要翻译：提供了一种生化容器，其可以打开一个关闭容器构件的盖构件，并且可以释放紧密密封的状态，而不需要移动盖构件的外边缘部分。在本发明中，容器构件110的端部的开口由盖构件120打开和关闭。当在这种关闭状态下从辅助开启构件140被按压时，应力被改变为开口通过改变方向机构150的方向施加在盖构件120上。因此，可以释放关闭容器构件110的盖构件120的紧密密封状态。

67. 发明授权

US06956322B2 Semiconductor light emitting device with stacked light emitting elements 失效
标题翻译：具有堆叠发光元件的半导体发光器件
公开(公告)号：US06956322B2
公开(公告)日：2005-10-18
申请号：US10725918
申请日：2003-12-01
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： G02B6/42 , H01L25/075 , H01L33/06 , H01L33/08 , H01L33/28 , H01L33/32 , H01S5/02 , H01S5/022 , H01S5/323 , H01S5/343 , H01S5/40 , H01J1/62
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347 , H01S5/4043 , H01S5/4087 , H04N9/315 , H01L2924/00
摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.
摘要翻译：可容易地制造并能够精确地控制发光位置的发光器件和光学器件。第一和第二发光元件形成在支撑基座的一个面上。第一发光元件在其上设置有支撑基底的一侧的GaN制的第一基板上具有由GaInN混晶构成的有源层。第二发光元件在其上设置有支撑基底的一侧的GaAs制造的第二基板上具有激光部分。由于第一发光元件和第二发光元件不在同一衬底上生长，所以可以容易地获得具有约400nm的输出波长的多波长激光器。由于第一基板在可见光区域是透明的，因此通过光刻可以精确地控制第一和第二发光元件中的发光区域的位置。

68. 发明授权

US06950451B2 Multi-beam semiconductor laser element 失效
标题翻译：多光束半导体激光元件
公开(公告)号：US06950451B2
公开(公告)日：2005-09-27
申请号：US10480568
申请日：2002-06-14
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/10 , H01S3/082 , H01S3/14 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

69. 发明授权

US06875082B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 失效
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US06875082B2
公开(公告)日：2005-04-05
申请号：US10665483
申请日：2003-09-22
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： B24B37/00 , C30B29/38 , H01L21/20 , H01L21/304 , H01L21/306 , H01L21/02
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。制造和抛光了具有大于45mm直径的圆形氮化物晶片。粗抛光通过抬起上转盘来补偿变形，在压力小于60g / cm 2的无压状态下抛光氮化物晶片。中心处的失真高度H降低到H <= 12 mum。分钟抛光是一种新设计的CMP，它们用包括氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

70. 发明申请

US20050023541A1 Semiconductor light emitting device and its manufacturing method 有权
公开(公告)号：US20050023541A1
公开(公告)日：2005-02-03
申请号：US10930009
申请日：2004-08-30
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

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