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    • 65. 发明申请
    • INTERFACE DEVICE
    • 接口设备
    • WO1996034332A1
    • 1996-10-31
    • PCT/JP1996001124
    • 1996-04-25
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.MARUNO, SusumuIMAGAWA, TaroMORIYA, MichiyoKONDO, Kenji
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • G06F03/033
    • G06F3/017H04N21/4223
    • This invention relates to an interface device for executing input/output operations of information equipment such as computers and word processors, and equipment having a display such as a television receiver, and this interface device comprises recognition means for recognizing the shape of a hand of an operator or its movement, display means for displaying the shape of the hand recognized by the recognition means and/or the characteristic feature of its movement as a specific shape, on the screen, and control means for controlling the information displayed on the screen according to the specific shape displayed on the screen by the display means. This interface device can select, indicate and move two-dimensional or three-dimensional information displayed on the screen to control it by merely changing or moving the shape of the hand, and provides an interface device that has a good operation feature and has high versatility.
    • 本发明涉及一种用于执行诸如计算机和文字处理器之类的信息设备的输入/输出操作的接口设备,以及具有诸如电视接收机的显示器的设备,该接口设备包括:识别装置,用于识别 操作者或其移动,用于在屏幕上显示由识别装置识别的手的形状和/或其移动的特征作为特定形状的显示装置,以及用于控制根据屏幕上显示的信息的控制装置 通过显示装置在屏幕上显示的具体形状。 该接口装置可以通过仅仅改变或移动手形来选择,指示和移动显示在屏幕上的二维或三维信息,并提供具有良好操作特征并具有高通用性的接口装置 。
    • 70. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    • 半导体器件及其制造方法
    • WO1996016432A2
    • 1996-05-30
    • PCT/JP1995002329
    • 1995-11-15
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.HIROKI, AkiraODANAKA, Shinji
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • H01L00/00
    • H01L29/0847H01L21/26586H01L29/1045H01L29/1083H01L29/66575H01L29/66659
    • A semiconductor device of the invention is formed so that the impurity concentration of a semiconductor substrate (1) under a source diffusion layer (2) is lower than the impurity concentration on a source side of a p-type impurity diffusion layer (6). Therefore, in the semiconductor device of the invention, the junction capacitance of the p-n junction between the source and the substrate is smaller as compared with a conventional LDC structure. In general, the speed of a device is proportional to the product obtained by multiplying together a load capacitance and an inverse of a current value of the device. Accordingly, in the case of applying the present invention to a circuit such as a NAND type CMOS circuit in which a voltage is applied to a region between the source and the substrate, the speed of the device is not decreased. On the other hand, the power consumption of a device is proportional to the product obtained by multiplying together a load capacitance and the square of an applied voltage. Consequently, according to the present invention, a semiconductor device which can be operated at a low power consumption is realized.
    • 本发明的半导体器件形成为使得源极扩散层(2)下方的半导体衬底(1)的杂质浓度低于p型杂质扩散层(6)的源极侧的杂质浓度。 因此,在本发明的半导体器件中,与传统的LDC结构相比,源极和衬底之间的p-n结的结电容较小。 通常,器件的速度与通过将负载电容和器件的当前值的反相相乘得到的乘积成比例。 因此,在将本发明应用于其中向源极和基板之间的区域施加电压的NAND型CMOS电路的电路的情况下,器件的速度不降低。 另一方面,器件的功耗与​​通过将负载电容和施加电压的平方相乘获得的乘积成比例。 因此,根据本发明,实现了能够以低功耗工作的半导体装置。