专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20050134147A1 Acoustic resonator device, filter device, manufacturing method for acoustic resonator device, and communication apparatus 失效
标题翻译：声谐振器装置，滤波装置，声谐振器装置的制造方法以及通信装置
公开(公告)号：US20050134147A1
公开(公告)日：2005-06-23
申请号：US10991772
申请日：2004-11-18
申请人： Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
发明人： Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
IPC分类号： H01L41/08 , H03H9/58
CPC分类号： H03H9/586 , H03H9/587 , H03H9/589
摘要： An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.
摘要翻译：声谐振器装置包括基板，第一声谐振器和第二声谐振器。第一声谐振器形成在基板上，并且具有第一上电极，第一压电层和第一下电极层，并以λ/ 4模式以第一谐振频率谐振。第二声谐振器形成在基板上，并且具有第二上电极层，第二压电层和第二下电极层，并且以不同于第一频率的第二谐振频率以λ/ 2模式谐振。在声谐振器装置中，第一下电极层和第二下电极层的材料和厚度是共同的并且基本上相等，并且第一压电层和第二压电层的材料和厚度是共同的并且基本相等。

62. 发明申请

US20100156554A1 ANTENNA DUPLEXER, AND RF MODULE AND COMMUNICATION APPARATUS USING THE SAME 审中-公开
标题翻译：天线双工器，以及RF模块和通信设备
公开(公告)号：US20100156554A1
公开(公告)日：2010-06-24
申请号：US12717464
申请日：2010-03-04
申请人： Hiroyuki Nakamura , Keiji Onishi , Tomohiro Iwasaki
发明人： Hiroyuki Nakamura , Keiji Onishi , Tomohiro Iwasaki
IPC分类号： H03H9/00
CPC分类号： H03H9/706 , H03H9/0038 , H03H9/0042 , H03H9/0576 , H03H9/14588 , H03H9/72 , H03H9/725
摘要： One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.
摘要翻译：连接到发送滤波器的多个发送终端中的一个和连接到接收滤波器的接收终端是平衡型终端，另一个是不平衡型终端。传输滤波器和接收滤波器包括表面声波谐振器或薄膜体声共振器。平衡型端子连接到纵模耦合表面声波滤波器。

63. 发明申请

US20100052476A1 PIEZOELECTRIC FILTER AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：压电过滤器及其制造方法
公开(公告)号：US20100052476A1
公开(公告)日：2010-03-04
申请号：US12523798
申请日：2008-11-19
申请人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi
发明人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi
IPC分类号： H01L41/04 , H01L41/22 , H01Q1/50
CPC分类号： H03H3/04 , H03H9/02086 , H03H9/0519 , H03H9/13 , H03H9/131 , H03H9/56 , H03H9/564 , H03H2003/0428 , Y10T29/42
摘要： A piezoelectric filter of the present invention is provided with first and second piezoelectric vibrators, each having a substrate, a lower load film formed on the substrate, a lower electrode formed on the lower load film, a piezoelectric element formed on the lower electrode, an upper electrode formed on the piezoelectric element and an upper load film formed on the upper electrode, and the piezoelectric filter is configured by electrically connecting the first and second piezoelectric vibrators to each other, and the piezoelectric element of the first piezoelectric vibrator and the piezoelectric element of the second piezoelectric vibrator correspond to respectively different areas of the same piezoelectric element; thus, the resonance frequencies of the first and second piezoelectric vibrators are adjusted by the respective lower load films and upper load films of the first piezoelectric vibrator and the second piezoelectric vibrator so that the resonance frequencies of the first and second piezoelectric vibrators are made different from each other.
摘要翻译：本发明的压电滤波器设置有第一和第二压电振动器，每个具有基板，形成在基板上的下载荷膜，形成在下载荷膜上的下电极，形成在下电极上的压电元件，形成在压电元件上的上电极和形成在上电极上的上载荷膜，并且压电滤波器通过将第一和第二压电振动器彼此电连接而构成，并且第一压电振动器的压电元件和压电元件的第二压电振子分别对应于同一压电元件的不同区域; 因此，第一和第二压电振动器的谐振频率由第一压电振动器和第二压电振动器的相应的下负载薄膜和上载荷薄膜调节，使得第一和第二压电振动器的谐振频率不同于彼此。

64. 发明授权

US07531943B2 Acoustic resonator and filter 失效
标题翻译：声谐振器和滤波器
公开(公告)号：US07531943B2
公开(公告)日：2009-05-12
申请号：US11092722
申请日：2005-03-30
申请人： Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura , Tomohiro Iwasaki
发明人： Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura , Tomohiro Iwasaki
IPC分类号： H01L41/08
CPC分类号： H03H9/02157 , H03H9/02149 , H03H9/174 , H03H9/585 , H03H9/588
摘要： The area of an opening C of a cavity is equal to or greater than the area of a horizontal cross section D of a vibrating section. The vibrating section is placed on a support section at a position such that a vertical projection of the vibrating section onto a substrate is accommodated within the opening C of the cavity. Moreover, the sum of a vertical thickness t1 of the vibrating section and a vertical thickness t2 of the support section is equal to one wavelength of a resonance frequency fr of an acoustic resonator (one wavelength=t1+t2), while the thickness t1 of the vibrating section and the thickness t2 of the support section are different from each other (t1≠t2). Thus, neither the thickness t1 of the vibrating section nor the thickness t2 of the support section is equal to the half wavelength of the resonance frequency fr.
摘要翻译：空腔的开口C的面积等于或大于振动部分的水平横截面D的面积。振动部分放置在支撑部分上，使得振动部分在基底上的垂直突起容纳在腔体的开口C内。此外，振动部的垂直厚度t1和支撑部的垂直厚度t2的和等于声谐振器的谐振频率fr的一个波长（一个波长= t1 + t2），而厚度t1 振动部分和支撑部分的厚度t2彼此不同（t1

65. 发明授权

US07408429B2 Coupled FBAR filter 失效
标题翻译：耦合FBAR滤波器
公开(公告)号：US07408429B2
公开(公告)日：2008-08-05
申请号：US11453064
申请日：2006-06-15
申请人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
发明人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
IPC分类号： H03H9/00
CPC分类号： H03H9/564 , H03H9/0207
摘要： A coupled FBAR filter 100 includes first and second input/output vibration portions 110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.
摘要翻译：耦合的FBAR滤波器100包括分别包括第一和第二下部电极104和106的第一和第二输入/输出振动部分110和111，第一和第二上部电极105和107以及介于其间的压电薄膜103; 以及用于共同地保证第一和第二输入/输出振动部分110和111的振动以便耦合振动的空腔102。第一和第二输入/输出振动部分110和111彼此相邻地彼此接触地定位，使得第一和第二下部电极104和106彼此不电连接，并且使得第一和第二输入/输出振动部分110和111 上电极105和107彼此不电连接。绝缘体108和109设置在台阶附近。

66. 发明申请

US20060284702A1 Coupled FBAR filter 失效
标题翻译：耦合FBAR滤波器
公开(公告)号：US20060284702A1
公开(公告)日：2006-12-21
申请号：US11453064
申请日：2006-06-15
申请人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
发明人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/564 , H03H9/0207
摘要： A coupled FBAR filter 100 includes first and second input/output vibration portions110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.
摘要翻译：耦合的FBAR滤波器100包括分别包括第一和第二下部电极104和106的第一和第二输入/输出振动部分110和111，第一和第二上部电极105和107以及介于其间的压电薄膜103; 以及用于共同地保证第一和第二输入/输出振动部分110和111的振动以便耦合振动的空腔102。第一和第二输入/输出振动部分110和111彼此相邻地彼此接触地定位，使得第一和第二下部电极104和106彼此不电连接，并且使得第一和第二输入/输出振动部分110和111 上电极105和107彼此不电连接。绝缘体108和109设置在台阶附近。

67. 发明申请

US20060028298A1 Antenna duplexer, and RF module and communication apparatus using the same 有权
标题翻译：天线双工器，以及使用其的RF模块和通信设备
公开(公告)号：US20060028298A1
公开(公告)日：2006-02-09
申请号：US11195820
申请日：2005-08-03
申请人： Hiroyuki Nakamura , Keiji Onishi , Tomohiro Iwasaki
发明人： Hiroyuki Nakamura , Keiji Onishi , Tomohiro Iwasaki
IPC分类号： H03H9/70
CPC分类号： H03H9/706 , H03H9/0038 , H03H9/0042 , H03H9/0576 , H03H9/14588 , H03H9/72 , H03H9/725
摘要： Either one of a transmission terminal connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and the other is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.
摘要翻译：连接到发送滤波器的发送终端和连接到接收滤波器的接收终端中的任一个是平衡型终端，而另一个是不平衡型终端。传输滤波器和接收滤波器包括表面声波谐振器或薄膜体声共振器。平衡型端子连接到纵模耦合表面声波滤波器。

68. 发明授权

US07446455B2 Thin film elastic wave resonator 失效
标题翻译：薄膜弹性波谐振器
公开(公告)号：US07446455B2
公开(公告)日：2008-11-04
申请号：US11666135
申请日：2005-12-06
申请人： Tomohiro Iwasaki , Keiji Onishi , Hiroshi Nakatsuka
发明人： Tomohiro Iwasaki , Keiji Onishi , Hiroshi Nakatsuka
IPC分类号： H01L41/08
CPC分类号： H03H9/0095 , H03H9/02118 , H03H9/132 , H03H9/564 , H03H9/566
摘要： An upper electrode (50) includes a first electrode section (51) formed in a circular shape and a second electrode section (52) and a third electrode section (53) formed in a fan-shaped manner outside of the first electrode section (51). The first, second, and third electrode sections (51 to 53) are electrically separated from one another via an insulating region. A lower electrode (30) includes a fourth electrode section (31) formed in a circular shape and a fifth electrode section (32) and a sixth electrode section (33) formed in a fan-shaped manner outside of the fourth electrode section (31). Similarly, the fourth, fifth, and sixth electrode sections (31 to 33) are electrically separated from one another via an insulating region. Further, the fourth electrode section (31) is provided so as to face the first electrode section (51) via the piezoelectric body (40), the fifth electrode section (32) is provided so as to face the second electrode section (52) via the piezoelectric body (40), and the sixth electrode section (33) is provided so as to face the third electrode section (53) via the piezoelectric body (40), respectively.
摘要翻译：上部电极（50）包括形成为圆形的第一电极部（51）和第二电极部（52）以及第三电极部（53），第一电极部（51）以扇形形成在第一电极部）。第一，第二和第三电极部分（51至53）经由绝缘区域彼此电分离。下电极30包括形成为圆形的第四电极部31和第四电极部31的扇形状的第五电极部32和第六电极部33，）。类似地，第四，第五和第六电极部分（31至33）经由绝缘区域彼此电分离。此外，第四电极部（31）经由压电体（40）与第一电极部（51）相对设置，第五电极部（32）设置成与第二电极部（52）相对，经由压电体（40），第六电极部（33）分别经由压电体（40）与第三电极部（53）相对。

69. 发明授权

US07235915B2 Acoustic resonator device, filter device, manufacturing method for acoustic resonator device, and communication apparatus 失效
标题翻译：声谐振器装置，滤波装置，声谐振器装置的制造方法以及通信装置
公开(公告)号：US07235915B2
公开(公告)日：2007-06-26
申请号：US10991772
申请日：2004-11-18
申请人： Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
发明人： Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H03H9/586 , H03H9/587 , H03H9/589
摘要： An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.
摘要翻译：声谐振器装置包括基板，第一声谐振器和第二声谐振器。第一声谐振器形成在基板上，并且具有第一上电极，第一压电层和第一下电极层，并以λ/ 4模式以第一谐振频率谐振。第二声谐振器形成在基板上，并且具有第二上电极层，第二压电层和第二下电极层，并且以不同于第一频率的第二谐振频率以λ/ 2模式谐振。在声谐振器装置中，第一下电极层和第二下电极层的材料和厚度是共同的并且基本上相等，并且第一压电层和第二压电层的材料和厚度是共同的并且基本相等。

70. 发明申请

US20060220763A1 Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same 审中-公开
标题翻译：声镜式薄膜体声波谐振器，以及包括其的滤波器，双工器和通信装置
公开(公告)号：US20060220763A1
公开(公告)日：2006-10-05
申请号：US10552582
申请日：2005-03-31
申请人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
发明人： Tomohiro Iwasaki , Hiroshi Nakatsuka , Keiji Onishi , Hiroyuki Nakamura
IPC分类号： H03H9/00
CPC分类号： H03H9/175 , H03H9/02157
摘要： A thin film bulk acoustic resonator (507b) comprises a substrate (101b), an acoustic mirror layer (508b) provided on the substrate (101b), including a plurality of impedance layers (502b, 503b) alternatively having a high acoustic impedance and a low acoustic impedance, and a piezoelectric thin film vibrator (509b) provided on the acoustic mirror layer (508b), including a lower electrode (504b), a piezoelectric thin film (105b) and an upper electrode (506b). The sum of a thickness of the lower electrode (504b) and a thickness of the upper electrode (506b) is 5% or more and 60% or less of a whole thickness of the piezoelectric thin film vibrator (509b), and the thickness of the lower electrode (504b) is larger than the thickness of the upper electrode (506b).
摘要翻译：薄膜体声波谐振器（507b）包括衬底（101b），设置在衬底（101b）上的声镜层（508b）），包括多个阻抗层（502b，503b），交替地具有高声阻抗和低声阻抗，以及设置在声镜层（508b）上的压电薄膜振子（509b），包括下电极（504b），压电薄膜（105b）和上电极（506b）。下部电极（504b）的厚度与上部电极（506b）的厚度之和为压电薄膜振子（509b）的整体厚度的5％以上且60％以下，下电极（504b）的厚度大于上电极（506b）的厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式