专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20060189084A1 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US20060189084A1
公开(公告)日：2006-08-24
申请号：US11328049
申请日：2006-01-09
申请人： Tetsuya Mizuguchi , Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama
发明人： Tetsuya Mizuguchi , Katsuhisa Aratani , Akihiro Maesaka , Akira Kouchiyama
IPC分类号： H01L21/8236 , H01L29/76
CPC分类号： H01L45/145 , H01L27/101 , H01L27/115 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory element in which data recording and data readout can be performed stably without difficulties and which can be manufactured with a comparatively simplified method is provided. The memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and the second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and the ion source layer further contains boron (or rare-earth elements and silicon).
摘要翻译：提供了可以稳定地进行数据记录和数据读出的存储元件，其难点并且可以以比较简化的方法制造。存储元件10包括存储层4和位于第一电极2和第二电极6之间的离子源层3，其中离子源层3包含选自Cu，Ag，Zn中的任何元素和选择的任何元素来自Te，S，Se，离子源层还含有硼（或稀土元素和硅）。

62. 发明授权

US07092278B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US07092278B2
公开(公告)日：2006-08-15
申请号：US11071082
申请日：2005-03-03
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C11/00 , G11C19/08 , G11C7/02
CPC分类号： G11C13/0011 , G11C11/5614 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2213/34 , G11C2213/79
摘要： Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations. The load circuit is formed by an element having the same structure as of the memory element of the memory cell.
摘要翻译：通过将特定条件写入选定的存储单元，可以容易且精确地执行数据读取。存储单元具有其中电极间材料层夹在第一电极和第二电极之间的结构。通过第一电极和第二电极之间的电阻值的变化来存储数据。当存储元件处于高电阻状态时的电阻值表示为R_mem_high; 当存储元件处于低电阻状态时的电阻值表示为R_mem_low1; 负载电路的电阻值表示为R_load; 通过将第二电源线的电压设置为参考电压，将读取电压表示为Vread; 阈值电压表示为Vth_critical。在将数据写入存储单元时，产生低电阻状态，使得这些参数满足特定关系。负载电路由具有与存储单元的存储元件相同结构的元件形成。

63. 发明申请

US20060126423A1 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US20060126423A1
公开(公告)日：2006-06-15
申请号：US11302781
申请日：2005-12-14
申请人： Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi
发明人： Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi
IPC分类号： G11C8/02
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer 4 is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.
摘要翻译：提供了稳定地执行诸如数据记录并且具有相对于热量的稳定结构的操作的存储元件。存储元件10包括存储层4和位于第一电极2和第二电极6之间的离子源层3，其中离子源层3包含选自Cu，Ag和Zn中的任何元素，以及选择的任何元素由Te，S，Se构成，记忆层4由氧化钽，氧化铌，氧化铝，氧化铪和氧化锆中的任一种构成，或由其混合材料制成。

64. 发明授权

US07016234B2 Storage device 有权
标题翻译：储存设备
公开(公告)号：US07016234B2
公开(公告)日：2006-03-21
申请号：US10883922
申请日：2004-07-02
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C7/00
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/24
摘要： A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.
摘要翻译：提供存储设备。存储装置包括多个存储单元，每个存储单元具有存储元件和有源元件，该有源元件包括控制对存储元件的访问的MOS晶体管，并且向存储元件施加电压，存储元件的电阻值改变并且记录其中已经写入信息之后的存储元件的电阻值变得低于必要并且可以容易地进行信息写入的信息。

65. 发明申请

US20050226999A1 Method of producing optical disk-use original and method of producing optical disk 有权
标题翻译：制造光盘使用原理的方法和制造光盘的方法
公开(公告)号：US20050226999A1
公开(公告)日：2005-10-13
申请号：US10498044
申请日：2003-09-25
申请人： Akira Kouchiyama , Katsuhisa Aratani
发明人： Akira Kouchiyama , Katsuhisa Aratani
IPC分类号： B05D5/06 , G03F7/004 , G11B7/004 , G11B7/26
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译：一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 根据记录信号图案用激光选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。

66. 发明申请

US20050174840A1 Memory device 有权
标题翻译：内存设备
公开(公告)号：US20050174840A1
公开(公告)日：2005-08-11
申请号：US11037554
申请日：2005-01-18
申请人： Tomohito Tsushima , Katsuhisa Aratani , Akira Kouchiyama
发明人： Tomohito Tsushima , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C11/15 , G11C8/00 , G11C11/56 , G11C13/02 , G11C16/02 , G11C16/04 , G11C16/10
CPC分类号： G11C11/5685 , G11C11/5614 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C13/0097 , G11C2013/0071 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A memory device is provided in which recording of multi-valued data can be performed at a high speed and the recording of multi-valued data can be performed with a drive circuit having comparatively simple configuration. The memory device is formed of a memory cell including a memory element which stores information according to a state of electric resistance and a MIS transistor as a load connected in series to the memory element; and when an operation to change the memory cell from a state of high resistance value to a state of low resistance value is defined as writing and when an operation to change the memory cell from the state of low resistance value to the state of high resistance value is defined as erasing respectively, a resistance value of the memory element after writing is set to a plurality of different levels by controlling gate voltages VG1, VG2 and VG3, or the like, which are applied to the MIS transistor at the time of writing, so that different information is respectively assigned to each of the plurality of levels and to the state of high resistance value after erasing to store information of three values or more respectively into a memory element of each memory cell.
摘要翻译：提供一种存储器件，其中可以高速度执行多值数据的记录，并且可以用具有相对简单配置的驱动电路来执行多值数据的记录。存储器件由存储单元形成，该存储单元包括存储元件，该存储单元根据电阻状态存储信息，并将MIS晶体管作为负载与存储元件串联连接; 并且当将存储单元从高电阻值状态改变为低电阻值状态的操作被定义为写入时，并且当将存储单元从低电阻值状态改变为高电阻值状态的操作分别定义为擦除，通过控制此时施加到MIS晶体管的栅极电压VG 1，VG 2和VG 3等将写入后的存储元件的电阻值设置为多个不同的电平的写入，使得不同的信息分别分配给多个电平中的每个电平，并且分别分配给擦除之后的高电阻值的状态以将三个值或更多个的信息分别存储到每个存储器单元的存储元件中。

67. 发明申请

US20050035373A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050035373A1
公开(公告)日：2005-02-17
申请号：US10883922
申请日：2004-07-02
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C13/00 , G11C7/00 , G11C11/00 , G11C16/02 , H01L27/10 , H01L27/105 , H01L27/24 , H01L29/94
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/24
摘要： A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.
摘要翻译：提供存储设备。存储装置包括多个存储单元，每个存储单元具有存储元件和有源元件，该有源元件包括控制对存储元件的访问的MOS晶体管，并且向存储元件施加电压，存储元件的电阻值改变并且记录其中已经写入信息之后的存储元件的电阻值变得低于必要并且可以容易地进行信息写入的信息。

68. 发明授权

US6101071A MR film with upper and lower magnetic layers with resistivity greater than that of MR film magnetic layers 失效
标题翻译： MR膜具有比MR膜磁性层大的电阻率的上下磁性层
公开(公告)号：US6101071A
公开(公告)日：2000-08-08
申请号：US905400
申请日：1997-08-04
申请人： Akira Kouchiyama
发明人： Akira Kouchiyama
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01L43/08 , G11B2005/3996
摘要： A multi-layered magnetoresistance effect film, a magnetoresistance effect device and a magnetoresistance effect magnetic head of high sensitivity not affected by the sense current magnetic field. The multi-layered magnetoresistance effect film 1 includes a multi-layered film 4 of a pattern made up of magnetic layers 10 and non-magnetic electrically conductive layers 11, repeatedly layered together, and electrically conductive layers 3, 5 formed on at least one end face in the layering direction of the multi-layered film 4. The resistivity of the electrically conductive layers 3, 5 is selected to be larger than that of the magnetic layer 10. The magnetoresistance effect device has the above-defined multi-layered magnetoresistance effect film 1, while the magnetoresistance effect magnetic head has the above-defined magnetoresistance effect device.
摘要翻译：高灵敏度的多层磁阻效应膜，磁阻效应器件和磁阻效应磁头不受感测电流磁场的影响。多层磁阻效应膜1包括由磁性层10和非磁性导电层11重复层叠在一起的图案的多层膜4和形成在至少一端的导电层3,5 面对多层膜4的层叠方向。导电层3,5的电阻率被选择为大于磁性层10的电阻率。磁阻效应器件具有上述多层磁阻效应薄膜1，而磁阻效应磁头具有上述的磁阻效应器件。

69. 发明授权

US08546782B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08546782B2
公开(公告)日：2013-10-01
申请号：US13164956
申请日：2011-06-21
申请人： Shuichiro Yasuda , Hiroaki Sei , Akira Kouchiyama , Masayuki Shimuta , Naomi Yamada
发明人： Shuichiro Yasuda , Hiroaki Sei , Akira Kouchiyama , Masayuki Shimuta , Naomi Yamada
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , G11C13/0007 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144
摘要： A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.
摘要翻译：提供了一种通过施加电压改善电阻改变的可控性的存储元件和存储器件。存储元件依次包括第一电极，存储层和第二电极。存储层包括设置在第一电极侧的电阻变化层和设置在第二电极侧的电阻值比电阻变化层高的电阻值。响应于施加到第一和第二电极的电压的组成变化，电阻变化层的电阻值是可变化的。

70. 发明授权

US08119043B2 Method of making master for manufacturing optical disc and method of manufacturing optical disc 失效
标题翻译：制造光盘的制造方法和制造光盘的方法
公开(公告)号：US08119043B2
公开(公告)日：2012-02-21
申请号：US10505455
申请日：2003-12-24
申请人： Shinichi Kai , Katsuhisa Aratani , Akira Kouchiyama , Kenzo Nakagawa , Yoshihiro Takemoto
发明人： Shinichi Kai , Katsuhisa Aratani , Akira Kouchiyama , Kenzo Nakagawa , Yoshihiro Takemoto
IPC分类号： B29D11/00 , B29D17/00
CPC分类号： G11B7/261 , Y10S425/81
摘要： The method of the present invention includes: an exposing process in which an inorganic resist layer 101 formed on a substrate 100 is irradiated with recording laser light modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on an optical disc to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and after the above process a development process in which development processing is performed on the inorganic resist layer to form a concave and convex pattern corresponding to the information concave and convex pattern of the inorganic resist layer; in the above exposing process, after a trial exposure is performed on a non-recording area of the above resist layer, the exposed portion is irradiated with evaluation laser light and a recording signal characteristic of the above resist layer is evaluated from the reflected light to determine based on the evaluation result an optimum focus position of recording laser light which is later performed; and accordingly the recording signal characteristic (jitter value) of the optical disc is predicted and evaluated in the exposing process from the recording characteristic of the exposed portion on the resist to appropriately adjust an exposure focusing position based on the evaluation result and thus, a master having an appropriate concave and convex pattern and consequently an optical disc having an excellent characteristic can be manufactured.
摘要翻译：本发明的方法包括：曝光处理，其中形成在基板100上的无机抗蚀剂层101被记录激光照射，该记录激光由对应于在光学上形成的信息凹凸图案的信息信号的信息信号调制形成对应于光盘上的信息凹凸图案的曝光图案，在上述处理之后，对无机抗蚀剂层进行显影处理以形成对应于信息凹部的凹凸图案的显影处理和无机抗蚀剂层的凸起图案; 在上述曝光处理中，在对上述抗蚀剂层的非记录区域进行试验曝光之后，用评价激光照射曝光部分，并将上述抗蚀剂层的记录信号从反射光评估为基于评价结果确定记录稍后进行的激光的最佳聚焦位置; 因此根据曝光部分的抗蚀剂的记录特性，在曝光处理中预测和评估光盘的记录信号特性（抖动值），以根据评估结果适当地调整曝光聚焦位置，因此，主具有适当的凹凸图案，因此可以制造具有优异特性的光盘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式