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    • 61. 发明授权
    • Construction machine
    • 施工机械
    • US07451843B2
    • 2008-11-18
    • US10559709
    • 2004-06-15
    • Hajime NakashimaKazuhiro UedaYasumasa KimuraHideo UtsunoToshiyuki Kobayashi
    • Hajime NakashimaKazuhiro UedaYasumasa KimuraHideo UtsunoToshiyuki Kobayashi
    • B60K11/04
    • E02F9/0866B60K11/08E02F9/00F01P11/12F01P2001/005
    • Engine noise of a construction machine is effectively reduced without reducing cooling performance and with an increase in the height of a body cover kept minimum. To achieve the above, an air-intake opening portion (10) and an air discharge opening portion (11) are arranged in a body cover (8) of an upper rotating body (1), and a cooling fan (5) in an engine room covered by the body cover (8) is driven, taking cooling air in from the air-intake opening portion (10) to cool a heat exchanger (7) in the body cover (8) and discharging the air from the air discharge opening portion (11). The air-intake opening portion (10) is laterally offset from a position facing to a ventilation surface of the heat exchanger (7). Alternatively, plural air-intake opening portions are located in a scattered manner such that the plural air-intake opening portions include the offset air-intake opening portion offset from the ventilation surface of the heat exchanger (7).
    • 在不降低冷却性能的同时,能够有效地减少施工机械的发动机噪音,并且使车身罩的高度保持最小。 为了实现上述目的,在上部旋转体(1)的主体罩(8)中设置有进气口部(10)和排气口部(11) 由主体罩(8)覆盖的发动机室被驱动,从进气口部分(10)吸入冷却空气以冷却车身盖(8)中的热交换器(7)并从空气排出口排出空气 开口部(11)。 进气口部分(10)从面向热交换器(7)的通风表面的位置横向偏移。 或者,多个进气口部分以分散的方式设置,使得多个进气口部分包括从热交换器(7)的通风表面偏移的偏移进气开口部分。
    • 62. 发明申请
    • Data processing circuit
    • 数据处理电路
    • US20070273407A1
    • 2007-11-29
    • US11727270
    • 2007-03-26
    • Kazuhiro Ueda
    • Kazuhiro Ueda
    • H03K19/094
    • H03K19/00384
    • The present invention provides a semiconductor device including a resistive element having a resistance characteristic which is not influenced by fluctuations in power supply voltage and a signal output circuit having a desired output impedance characteristic without being influenced by fluctuations in power supply voltage. A constant current based on a reference voltage corresponding to a ground potential point of a circuit is generated. The constant current is passed to a first resistive element whose one end is connected to a power supply voltage terminal. A voltage generated by the first resistive element is supplied to a first differential amplifier, and the output voltage is supplied to the gate of a first MOSFET of a first conduction type whose source is connected to the power supply voltage terminal. A drain voltage to the first MOSFET is fed back to the other input terminal of the first differential amplifier. A first current source is provided between the drain of the first MOSFET and the ground potential point, of the circuit. A second MOSFET of the first conduction type whose source is connected to the power supply voltage terminal, and whose gate and the gate of the first MOSFET are commonly connected is used as a resistive element.
    • 本发明提供了一种半导体器件,其包括具有不受电源电压波动影响的电阻特性的电阻元件和具有期望输出阻抗特性的信号输出电路,而不受电源电压波动的影响。 产生基于与电路的地电位相对应的基准电压的恒定电流。 恒定电流被传递到其一端连接到电源电压端子的第一电阻元件。 由第一电阻元件产生的电压被提供给第一差分放大器,并且将输出电压提供给源极连接到电源电压端子的第一导电类型的第一MOSFET的栅极。 到第一MOSFET的漏极电压被反馈到第一差分放大器的另一个输入端。 第一电流源设置在电路的第一MOSFET的漏极和地电位点之间。 将源极连接到电源电压端并且其栅极和第一MOSFET的栅极共同连接的第一导电类型的第二MOSFET用作电阻元件。
    • 63. 发明申请
    • Magnetoresistive head and a manufacturing method thereof
    • 磁阻头及其制造方法
    • US20070206333A1
    • 2007-09-06
    • US11706152
    • 2007-02-13
    • Katsuro WatanabeTaku ShintaniKazuhiro UedaMasahiro Osugi
    • Katsuro WatanabeTaku ShintaniKazuhiro UedaMasahiro Osugi
    • G11B5/33
    • G11B5/3903G11B5/3163G11B5/398
    • Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.
    • 根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响,降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性 由屏蔽过程产生,并且在CPP磁阻头中将静电容量维持在较小的值。 在本发明的磁阻头的一个实施例中,钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。 由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度 从磁阻膜的底表面。 传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。