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61. 发明授权

US07791012B2 Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes 有权
标题翻译：包括光电转换元件和高电位和低电位电极的半导体器件
公开(公告)号：US07791012B2
公开(公告)日：2010-09-07
申请号：US11898834
申请日：2007-09-17
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01L31/00
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351
摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
摘要翻译：通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性的降低。此外，放大光电转换元件的输出电流的放大电路稳定地工作。半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜电路，与每个薄膜晶体管电连接的高电位电源，以及电连接到每个薄膜晶体管的低电位电源薄膜晶体管。当参考薄膜晶体管是n型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近低电位电源。当参考薄膜晶体管是p型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近高电位电源。

62. 发明授权

US07737478B2 Photoelectric conversion device and electronic device provided with the photoelectric conversion device 失效
标题翻译：配备有光电转换装置的光电转换装置和电子装置
公开(公告)号：US07737478B2
公开(公告)日：2010-06-15
申请号：US12053948
申请日：2008-03-24
申请人： Makoto Yanagisawa , Atsushi Hirose
发明人： Makoto Yanagisawa , Atsushi Hirose
IPC分类号： H01L31/113
CPC分类号： H04N5/35518 , G01J1/4204 , G01J1/44 , H01L27/14609
摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.
摘要翻译：包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到根据在光电转换元件处产生的电流Ip。可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

63. 外观设计

USD589183S1 Rear combination lamp for an automobile 有权
公开(公告)号：USD589183S1
公开(公告)日：2009-03-24
申请号：US29287231
申请日：2007-07-12
申请人： Atsushi Hirose , Nobuaki Mizobe
设计人： Atsushi Hirose , Nobuaki Mizobe

64. 外观设计

USD573512S1 Automobile and toy replica thereof 有权
公开(公告)号：USD573512S1
公开(公告)日：2008-07-22
申请号：US29287234
申请日：2007-07-12
申请人： Saburo Hazumi , Atsushi Hirose , Kenji Tomida
设计人： Saburo Hazumi , Atsushi Hirose , Kenji Tomida

65. 发明授权

US07221470B2 Image output device, image forming device and method for generating video hard copy 失效
标题翻译：图像输出装置，图像形成装置和用于产生视频硬拷贝的方法
公开(公告)号：US07221470B2
公开(公告)日：2007-05-22
申请号：US10309069
申请日：2002-12-04
申请人： Kouichi Takamine , Atsushi Hirose
发明人： Kouichi Takamine , Atsushi Hirose
IPC分类号： G06F15/00
CPC分类号： H04N1/00291 , H04N1/00294 , H04N2201/0039
摘要： A video buffer that updates and holds an inputted video signal by a unit of a frame image includes: an image data holding unit having a first image data holding unit that holds the latest frame image, a second image data holding unit that holds a second frame image that goes back n pieces of frames in time from the first frame image and a third image data holding unit that holds the third frame image that goes back m pieces of frames in time from the first frame image; a moving picture display unit that displays the latest frame image held in the first image data holding unit; a print data selection unit that selects a frame image stored in any of the first to third image data holding units as a print object; a print confirmation display unit that displays the selected frame image; a print data generation unit that converts the image data of the displayed image into print data and so forth.
摘要翻译：一种通过帧图像单元更新和保持输入的视频信号的视频缓冲器包括：具有保存最新帧图像的第一图像数据保持单元的图像数据保持单元，保存第二帧的第二图像数据保持单元从第一帧图像在时间上返回n个帧的图像;以及第三图像数据保持单元，其保持从第一帧图像及时地返回m个帧的第三帧图像; 运动图像显示单元，显示保持在第一图像数据保持单元中的最新帧图像; 打印数据选择单元，选择存储在第一至第三图像数据保持单元中的任何一个中的帧图像作为打印对象; 打印确认显示单元，显示所选择的帧图像; 将显示的图像的图像数据转换为打印数据等的打印数据生成单元。

66. 外观设计

USD518194S1 Front combination lamp for an automobile 有权
公开(公告)号：USD518194S1
公开(公告)日：2006-03-28
申请号：US29218965
申请日：2004-12-09
申请人： Atsushi Hirose
设计人： Atsushi Hirose

67. 发明授权

US06724574B2 Head gimbal assembly having an encased drive IC chip 失效
标题翻译：头万向节组件具有封装的驱动IC芯片
公开(公告)号：US06724574B2
公开(公告)日：2004-04-20
申请号：US09781227
申请日：2001-02-13
申请人： Takeshi Wada , Mitsuyoshi Kawai , Takao Matsumoto , Atsushi Hirose , Masashi Shiraishi
发明人： Takeshi Wada , Mitsuyoshi Kawai , Takao Matsumoto , Atsushi Hirose , Masashi Shiraishi
IPC分类号： G11B548
CPC分类号： G11B5/486 , G11B5/484
摘要： A HGA includes a magnetic head slider having at least one thin-film magnetic head element, an IC chip having a circuit for the at least one thin-film magnetic head element, and a suspension for supporting the magnetic head slider and the IC chip. All surfaces of the IC chip are coated by additional insulation layers.
摘要翻译： HGA包括具有至少一个薄膜磁头元件的磁头滑动器，具有用于至少一个薄膜磁头元件的电路的IC芯片和用于支撑磁头滑块和IC芯片的悬架。 IC芯片的所有表面均涂有额外的绝缘层。

68. 外观设计

USD853919S1 Instrument panel for an automobile 有权
公开(公告)号：USD853919S1
公开(公告)日：2019-07-16
申请号：US29645112
申请日：2018-04-24
申请人： Saburo Hazumi , Atsushi Hirose , Ben Uk Chang
设计人： Saburo Hazumi , Atsushi Hirose , Ben Uk Chang
摘要： FIG. 1 is a perspective view of an instrument panel for an automobile showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The claimed design is indicated by the relatively dark portions in the figures. The relatively light portions form no part of the claimed design.

69. 发明授权

US09209209B2 Photoelectric conversion device and method for operating the same 有权
标题翻译：光电转换装置及其操作方法
公开(公告)号：US09209209B2
公开(公告)日：2015-12-08
申请号：US13277244
申请日：2011-10-20
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01J40/14 , H01L31/112 , H01L27/144 , G01J1/46 , H04N5/374
CPC分类号： H01L27/1443 , G01J1/46 , H04N5/374
摘要： To provide a photoelectric conversion device with low power consumption and a method for operating the photoelectric conversion device. The photoelectric conversion device includes a charge storage capacitor portion, a photodiode, and a plurality of transistors. The charge storage capacitor portion is charged after being reset. Then, the charge storage capacitor portion is discharged through the photodiode or a current mirror circuit connected to the photodiode for a given period of time, and after that, the potential of the charge storage capacitor portion is read. Since power is consumed only at the time of charging, power consumption can be reduced.
摘要翻译：提供具有低功耗的光电转换装置和用于操作光电转换装置的方法。光电转换装置包括电荷存储电容器部分，光电二极管和多个晶体管。复位后，对电荷存储电容部进行充电。然后，通过光电二极管或连接到光电二极管的电流镜电路给定电荷存储电容器部分放电一定时间，然后读取电荷存储电容器部分的电位。由于仅在充电时消耗电力，因此可以降低功耗。

70. 发明授权

US08772752B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08772752B2
公开(公告)日：2014-07-08
申请号：US13477373
申请日：2012-05-22
申请人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
发明人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
IPC分类号： H01L47/00
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/78633 , H01L29/78648
摘要： An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.
摘要翻译：目的是防止黑色矩阵层的宽度未扩大到设计值以上的情况下由于配准不良引起的漏光。本发明的一个实施例是一种包括单栅极薄膜晶体管的半导体器件，其中第一半导体层夹在底栅电极和第一黑矩阵层之间。第一半导体层和第一黑矩阵层彼此重叠。

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