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61. 发明授权

US08404497B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08404497B2
公开(公告)日：2013-03-26
申请号：US12946131
申请日：2010-11-15
申请人： Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
发明人： Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
IPC分类号： H01L21/66
CPC分类号： H01L23/49838 , H01L22/32 , H01L23/3121 , H01L23/49816 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L2224/05554 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/48228 , H01L2224/48229 , H01L2224/49175 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/078 , H01L2924/10161 , H01L2924/10162 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/3011 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.
摘要翻译：公开了一种表面贴装型半导体器件。半导体器件具有安装在其上的半导体芯片的布线基板的下表面上的测试焊盘。具有与其分别耦合的焊料球的下表面侧焊盘和在其没有耦合的焊球的测试焊盘形成在布线基板的下表面上。为了抑制测试台和设置在探针插座中的接地触针之间的接触不良的发生，每个测试台的直径被设定为大于每个下表面侧的直径。即使布线基板的尺寸减小，也可以高精度地进行使用测试台面的电特性测试。

62. 发明授权

US08338560B2 Polyimide film and use thereof 有权
标题翻译：聚酰亚胺膜及其用途
公开(公告)号：US08338560B2
公开(公告)日：2012-12-25
申请号：US11918558
申请日：2006-04-25
申请人： Hisayasu Kaneshiro , Takashi Kikuchi
发明人： Hisayasu Kaneshiro , Takashi Kikuchi
IPC分类号： C08G73/00 , B32B7/12 , B32B15/08
CPC分类号： H05K1/0346 , B32B15/08 , C08G73/1071 , C08L79/08 , C09J7/22 , C09J7/25 , C09J7/35 , C09J2201/61 , C09J2479/08 , C09J2479/086 , H05K3/022 , H05K3/386 , H05K2201/0154 , Y10T428/2826 , Y10T428/31681
摘要： The present invention provides a polyimide film and its usage. The polyimide film according to the present invention does not cause dimensional change due to thermal stress. The present invention particularly relates to a polyimide film and its usage, which polyimide film has a characteristic of suppressing thermal deformation of the material in lamination of a polyimide film and a metal layer by a laminate method. The polyimide film according to the present invention has the following characteristics: (1) an inflexion point of storage modulus ranges from 270° C. to 340° C.; (2) tan δ, which is a value obtained by dividing a loss elastic modulus by a storage modulus, has a peak-top in a range of 320° C. to 410° C.; (3) a storage modulus at 380° C. ranges from 0.4 GPa to 2.0 GPa; and (4) a storage modulus α1 at the inflexion point (GPa) and a storage modulus α2 at 380° C. (GPa) satisfy: 85≧{(α1−α2)/α1}×100≧65. With these characteristics, the polyimide film gives an effect of suppressing thermal deformation of the material in lamination of a polyimide film and a metal layer by a laminate method.
摘要翻译：本发明提供一种聚酰亚胺薄膜及其用途。根据本发明的聚酰亚胺膜不会由于热应力而引起尺寸变化。本发明特别涉及一种聚酰亚胺薄膜及其用途，该聚酰亚胺薄膜具有通过层叠方法抑制层叠聚酰亚胺薄膜和金属层的材料的热变形的特性。本发明的聚酰亚胺薄膜具有以下特征：（1）储能模量的拐点为270℃〜340℃。（2）作为通过将损失弹性模量除以储能模量而获得的值的tanδ在320℃〜410℃的范围内具有峰顶。（3）380℃下的储能模量为0.4GPa至2.0GPa; （4）在拐点处的储能模量α1（GPa）和380℃下的储能模量α2（GPa）满足：85≥{（α1-α2）/α1}×100≥65。通过这些特性，聚酰亚胺膜具有通过层叠法抑制层叠聚酰亚胺膜和金属层的材料的热变形的效果。

63. 发明授权

US08298366B2 Adhesive sheet and copper-clad laminate 有权
标题翻译：粘合片和覆铜层压板
公开(公告)号：US08298366B2
公开(公告)日：2012-10-30
申请号：US13221358
申请日：2011-08-30
申请人： Hisayasu Kaneshiro , Takashi Kikuchi
发明人： Hisayasu Kaneshiro , Takashi Kikuchi
IPC分类号： B32B37/00 , B29C65/00
CPC分类号： H05K1/0346 , C09J7/25 , C09J2479/086 , H05K1/0393 , H05K3/386 , H05K2201/0154 , H05K2201/068 , Y10T428/2852 , Y10T428/31678
摘要： Disclosed is an adhesive film having high dimensional stability which can be suitably used for two layer FPCs. Specifically, disclosed is an adhesive sheet composed of an insulating layer and an adhesive layer arranged on one side or both sides of the insulating layer. This adhesive sheet is characterized in that the insulating layer has a ratio E′2/E′1 between the storage elasticity modulus E′1 at 25° C. and the storage elasticity modulus E′2 at 380° C. of not more than 0.2 and a coefficient of thermal expansion in the MD direction of 5-15 ppm at 100-200° C. It is further characterized in that the change in the coefficient of thermal expansion of the adhesive sheet at 100-250° C. after heat treatment at 380° C. for 30 seconds under tension of 20 kg/m is not more than 2.5 ppm in the tension direction and not more than 10 ppm in the direction perpendicular to the tension direction.
摘要翻译：公开了一种具有高尺寸稳定性的粘合膜，其可以适用于两层FPC。具体地，公开了由绝缘层和布置在绝缘层的一侧或两侧上的粘合层构成的粘合片。该粘合片的特征在于绝缘层在25℃下的储能弹性模量E'1与380℃下的储能弹性模量E'2之间的比率E'2 / E'1不大于 0.2，在100〜200℃下MD方向的热膨胀系数为5〜15ppm。其特征还在于，热处理后的粘合片的热膨胀系数在100〜250℃的变化在拉伸方向下，在380℃，30秒的张力下处理30分钟，在拉伸方向垂直的方向为不大于10ppm。

64. 发明授权

US08293575B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US08293575B2
公开(公告)日：2012-10-23
申请号：US12834937
申请日：2010-07-13
申请人： Tatsuya Hirai , Tomoaki Hashimoto , Takashi Kikuchi , Masatoshi Yasunaga , Michiaki Sugiyama
发明人： Tatsuya Hirai , Tomoaki Hashimoto , Takashi Kikuchi , Masatoshi Yasunaga , Michiaki Sugiyama
IPC分类号： H01L23/28
CPC分类号： H01L25/50 , H01L21/561 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49833 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/16 , H01L2224/05553 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/3511 , H01L2924/00014 , H01L2224/85 , H01L2924/00 , H01L2924/00012
摘要： The reliability of a semiconductor device is improved. A sealing resin (sealed body) is formed between a sub-substrate (first base member) and a base substrate (second base member) that are provided individually and distinctly to be integrated therewith, and then, the sub-substrate is electrically coupled to the second base member. As a means for electrically coupling the sub-substrate to the base substrate, lands (first lands) formed on the sub-substrate and lands (second lands) formed on the base substrate are disposed such that the respective positions thereof are aligned. After through holes are formed from the lands of the sub-substrate toward the lands of the base substrate, a solder member (conductive member) is formed in each of the through holes.
摘要翻译：提高了半导体器件的可靠性。在单独且明显地与其一体化设置的子基板（第一基底构件）和基底基板（第二基底构件）之间形成密封树脂（密封体），然后，将辅助基板电耦合到第二个基础成员。作为将基板与基板电连接的装置，在基板上形成的焊盘（第一焊盘）和基板上形成的焊盘（第二焊盘）配置成使其各自的位置对齐。在从底基板的台阶朝向基板的焊盘形成通孔之后，在每个通孔中形成焊料部件（导电部件）。

65. 发明授权

US08293331B2 Metal-coated polyimide film 有权
公开(公告)号：US08293331B2
公开(公告)日：2012-10-23
申请号：US13369957
申请日：2012-02-09
申请人： Hisayasu Kaneshiro , Takashi Kikuchi , Shogo Fujimoto
发明人： Hisayasu Kaneshiro , Takashi Kikuchi , Shogo Fujimoto
IPC分类号： B05D3/00 , B05D1/36 , C23C14/14
CPC分类号： H05K1/0346 , B32B15/08 , B32B27/28 , C08G73/101 , C08L79/08 , H05K1/0393 , H05K3/388 , H05K2201/0154 , H05K2203/065 , Y10T428/31681 , Y10T428/31721
摘要： A metal-coated polyimide film is excellent in long-term adhesion reliability, exhibits various dimensional stabilities, and is particularly suitable for FPC, COF and TAB applications. The metal-coated polyimide film comprises a non-thermoplastic polyimide film; and a metal layer being directly formed on one surface or both surfaces of the non-thermoplastic polyimide film without using an adhesive, wherein the non-thermoplastic polyimide film contains a non-thermoplastic polyimide resin having a thermoplastic polyimide block component.

66. 发明授权

US08113716B2 Bearing with lubrication oil filter 有权
标题翻译：轴承带润滑油过滤器
公开(公告)号：US08113716B2
公开(公告)日：2012-02-14
申请号：US12066934
申请日：2007-06-29
申请人： Takashi Kikuchi , Yutaka Matsuyama
发明人： Takashi Kikuchi , Yutaka Matsuyama
IPC分类号： F16C33/10 , F16C33/66 , F16C33/02
CPC分类号： F01M11/03 , F02F7/0053 , F16C9/02 , F16C17/022 , F16C33/105
摘要： A bearing (crank bearing 6) is constituted of an upper bearing (61) that is attached to a cylinder block, a lower bearing (67) that is attached to a crank cap, and a bearing filter (71) for filtering engine oil. The bearing filter (71) is fitted in an oil hole (62A) of the upper bearing (61).
摘要翻译：轴承（曲轴轴承6）由附接到气缸体的上轴承（61），附接到曲柄盖的下轴承（67）和用于过滤机油的轴承过滤器（71）构成。轴承过滤器（71）装配在上轴承（61）的油孔（62A）中。

67. 发明申请

US20120022271A1 NOVEL METHOD FOR PRODUCING OPTICALLY ACTIVE PYRROLIDINE COMPOUND 审中-公开
标题翻译：用于生产光学活性吡咯烷酮化合物的新方法
公开(公告)号：US20120022271A1
公开(公告)日：2012-01-26
申请号：US13259640
申请日：2010-04-13
申请人： Atsushi Ohigashi , Takashi Kikuchi
发明人： Atsushi Ohigashi , Takashi Kikuchi
IPC分类号： C07C253/30 , C07D207/08 , C07D207/16
CPC分类号： C07D207/12 , C07B53/00 , C07C253/30 , C07D207/16 , C07C255/24
摘要： [Object]A novel method for producing an optically active pyrrolidine compound, which is useful as a production intermediate of a pharmaceutical, and a production intermediate thereof, is provided.[Means for Solution]According to the production method of the present invention, a chloro compound that is a key intermediate can be produced efficiently industrially by subjecting a mixture of regioisomers obtained by reacting an optically active epoxy compound substituted with aryl, which is easily available, with an amine compound, to chlorination. Furthermore, an optically active pyrrolidine compound can be produced industrially efficiently with the key intermediate.[Selected Figure] None
摘要翻译：本发明提供了可用作药物的生产中间体的光学活性吡咯烷化合物及其制备中间体的新方法。 [解决方案]根据本发明的制造方法，作为关键中间体的氯化合物可以通过使由易于获得的光取代的芳基取代的光学活性环氧化合物反应获得的区域异构体的混合物在工业上有效地制造与胺化合物进行氯化反应。此外，光学活性吡咯烷化合物可以用关键中间体在工业上有效地制备。 [已选图]无

68. 发明授权

US07923292B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07923292B2
公开(公告)日：2011-04-12
申请号：US12846616
申请日：2010-07-29
申请人： Takashi Kikuchi , Koichi Kanemoto , Chuichi Miyazaki , Toshihiro Shiotsuki
发明人： Takashi Kikuchi , Koichi Kanemoto , Chuichi Miyazaki , Toshihiro Shiotsuki
IPC分类号： H01L23/49 , H01L21/50
CPC分类号： H01L24/83 , H01L23/3128 , H01L23/49575 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2224/05554 , H01L2224/274 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48175 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/49113 , H01L2224/4912 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/83191 , H01L2224/8385 , H01L2224/85181 , H01L2224/92 , H01L2224/97 , H01L2225/0651 , H01L2225/06562 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/30105 , H01L2924/3511 , H01L2224/85 , H01L2224/83 , H01L2224/92247 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/01028 , H01L2224/29099 , H01L2224/85399 , H01L2224/05599
摘要： In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.
摘要翻译：在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。

69. 发明授权

US07811660B2 Polyimide film having high adhesiveness and method for producing same 有权
标题翻译：具有高粘合性的聚酰亚胺膜及其制造方法
公开(公告)号：US07811660B2
公开(公告)日：2010-10-12
申请号：US11698656
申请日：2007-01-26
申请人： Hisayasu Kaneshiro , Hiroyuki Tsuji , Takashi Kikuchi
发明人： Hisayasu Kaneshiro , Hiroyuki Tsuji , Takashi Kikuchi
IPC分类号： C08J5/18 , C08G73/10 , C08L79/08
CPC分类号： C08G73/1007 , C08G73/10 , C08G73/1042 , C09D179/08 , C09J179/08 , H05K1/0346 , H05K1/0393 , H05K2201/0154 , Y10T428/31721
摘要： A non-thermoplastic polyimide film exhibits high adherability without expensive surface treatment and is made from a precursor solution having high storage stability. The non-thermoplastic polyimide film comprises a non-thermoplastic polyimide resin having a block component derived from a thermoplastic polyimide. Preferably, the block component of the thermoplastic polyimide is present in an amount of 20 to 60 mol % of the entire polyimide so that the precursor solution thereof exhibits high storage stability and that the film can exhibit high adherability, in particular, high adherability to polyimide adhesives.
摘要翻译：非热塑性聚酰亚胺膜表现出高附着性，而不需要昂贵的表面处理，并由具有高储存稳定性的前体溶液制成。非热塑性聚酰亚胺膜包括具有衍生自热塑性聚酰亚胺的嵌段组分的非热塑性聚酰亚胺树脂。优选地，热塑性聚酰亚胺的嵌段组分的存在量为整个聚酰亚胺的20至60摩尔％，使得其前体溶液表现出高的储存稳定性，并且该膜可以表现出高的可粘合性，特别是对聚酰亚胺的高粘合性粘合剂。

70. 发明授权

US07678315B2 Process for producing adhesive film 有权
标题翻译：粘合膜生产工艺
公开(公告)号：US07678315B2
公开(公告)日：2010-03-16
申请号：US11601267
申请日：2006-11-17
申请人： Masami Yanagida , Hisayasu Kaneshiro , Takashi Kikuchi , Hiroyuki Tsuji
发明人： Masami Yanagida , Hisayasu Kaneshiro , Takashi Kikuchi , Hiroyuki Tsuji
IPC分类号： B29C47/06
CPC分类号： B32B27/18 , B32B7/12 , B32B15/08 , B32B15/20 , B32B27/08 , B32B27/281 , B32B2307/306 , B32B2457/00 , B32B2457/08 , C09J7/22 , C09J7/35 , C09J179/08 , C09J2479/08 , C09J2479/086 , Y10T428/31728
摘要： A process for producing an adhesive film includes laminating an adhesive layer containing thermoplastic polyimide onto at least one surface of a highly heat-resistant polyimide layer by coextrusion casting method, wherein a chemical dehydrator and a catalyst are contained in a precursor solution of the highly heat-resistant polyimide and/or a solution containing either the thermoplastic polyimide or a precursor of the thermoplastic polyimide.
摘要翻译：制造粘合膜的方法包括通过共挤出铸造法将含有热塑性聚酰亚胺的粘合层层压到高耐热聚酰亚胺层的至少一个表面上，其中在高热量的前体溶液中含有化学脱水剂和催化剂耐热聚酰亚胺和/或含热塑性聚酰亚胺或热塑性聚酰亚胺前体的溶液。

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