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62. 发明授权

US5508536A Heterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction region 失效
标题翻译：在发射极 - 基极结区域具有低电子和空穴浓度的异质结双极晶体管
公开(公告)号：US5508536A
公开(公告)日：1996-04-16
申请号：US224650
申请日：1994-04-07
申请人： John K. Twynam , Katsuhiko Kishimoto , Toshiaki Kinosada
发明人： John K. Twynam , Katsuhiko Kishimoto , Toshiaki Kinosada
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/7371
摘要： The present invention provides a heterojunction bipolar transister includes: a collector layer, a base layer, an emitter layer, a transition layer formed between the base layer and the emitter layer, a collector electrode connected to the collector layer, a base electrode connected to the base layer, and an emitter electrode connected to the emitter layer, wherein the emitter layer and the transition layer are formed of a composition including elements forming the base layer and at least one element different from the elements forming the base layer, a composition of the different element in the transition layer at the emitter side is substantially equal to that of the emitter layer, a composition of the different element in the transition layer at the base side is smaller than that of the emitter side and varies abruptly towards the base layer, and the composition of the transition layer gradingly varies from the base side to the emitter side.
摘要翻译：本发明提供一种异质结双极转换器，包括：集电极层，基极层，发射极层，形成在基极层和发射极层之间的过渡层，连接到集电极层的集电极，连接到集电极层的基极基底层和连接到发射极层的发射极，其中发射极层和过渡层由包含形成基底层的元素和与形成基底层的元素不同的至少一个元素的组合物形成，在发射极侧的过渡层中的不同元素基本上等于发射极层的不同元素，基极侧的过渡层中的不同元素的组成小于发射极侧的过渡层中的不同元素的组成，并且朝向基极层突然变化，并且过渡层的组成从基极侧到发射极侧分级变化。

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