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    • 61. 发明专利
    • MANUFACTURE OF PHOTOVOLTAIC DEVICE
    • JPH0397273A
    • 1991-04-23
    • JP23669489
    • 1989-09-11
    • SANYO ELECTRIC CO
    • MURATA KENJITANAKA HIROYUKIKAMITSUMA SHINICHIINOUE HIROSHIKISHI YASUO
    • H01L31/04
    • PURPOSE:To simplify the processing by a method wherein a conductor and an insulator are formed adjacent each other, an amorphous semiconductor layer and a rear electrode are laminated on the conductor and the insulator and these are cut in a simultaneous manner using an energy beam shaped asymmetrically with respect to the border line between the conductor and the insulator. CONSTITUTION:A transparent electrode 2 is laminatedly formed on the whole surface of a light-transmitting insulating substrate 1 and thereafter, with the electrode 2 cut and separated into two by laser scribing, a conductor 3 and an insulator 4 are formed in parallel with each other on the separated transparent electrodes 2 and 2 in a state that they are in contact with each other. Then, a lens 7 is arranged in the optical path of a laser beam LB and the laser beam LB is projected in a pulse status with width to cover both of the conductor 3 and the insulator 4. An open pattern of an iris 8, that is, a laser beam projection pattern 9 is an asymmetric pattern with respect to the border line between the conductor 3 and the insulator 4, for example. An amorphous semiconductor layer 5 and a rear electrode 6, which are located on the insulator 4, are both made to transpire and divided and the at the same time, the edge part of the electrode 6 is made to solidify at the trace of the transpired layer 5 in a state that is contacts with the surface of the insulator 4.
    • 64. 发明专利
    • MOUNTING PROCESS OF ELECTRONIC COMPONENT
    • JPH01236636A
    • 1989-09-21
    • JP6430288
    • 1988-03-17
    • SANYO ELECTRIC CO
    • MURATA KENJIINOUE HIROSHITANAKA TOSHIYAKAMITSUMA SHINICHIKISHI YASUO
    • H01L21/60H05K3/30H05K3/34
    • PURPOSE:To simplify the mounting process by a method wherein the substrate of an electronic component and a wiring substrate are fixed with a thermoplastic resin of a melting point lower than that of solder bumps and then the electronic component and the wiring substrate are heated at a temperature higher than the melting point of the solder bumps to connect the electronic component with the wiring substrate. CONSTITUTION:A substrate 2 of an electronic component 1 and a wiring substrate 8 are fixed by a thermoplastic resin 15 in lower melting point than that of solder bumps 11a, 11b in the state where the solder bumps 11a, 11b formed on the electronic component 1 are brought into contact with the input terminals 10a, 10b of the wiring substrate 8 and then the electronic component 1 and the wiring substrate 8 are heated at the temperature higher than the melting point of the solder bumps 11a, 11b to connect the electronic component 1 with the wiring substrate 8. The softened thermoplastic resin 15 enters into the gap between the electronic component 1 and the wiring substrate 8 not to decrease said gap exceeding the required amount while the thermoplastic resin 15 sets to become a reinforcement when the heating process is terminated thus eliminating any later reinforcing process. Through these procedures, the mounting process can be simplified.
    • 65. 发明专利
    • MODULARIZATION OF SOLAR BATTERY
    • JPH01212480A
    • 1989-08-25
    • JP3796288
    • 1988-02-19
    • SANYO ELECTRIC CO
    • MURATA KENJIINOUE HIROSHITANAKA TOSHIYAKAMITSUMA SHINICHIKISHI YASUO
    • H01L31/042H01L31/04
    • PURPOSE:To enable the modularization of a solar battery easily even by a nonskilled worker by a method wherein a surface material is combined with the solar battery through the intermediary of a thermosetting resin sheet and the wiring of the solar battery, a rear material and the solar battery are joined together with a heat-treatment type conductive bonding agent at the same time. CONSTITUTION:A transparent surface material 2, a thermosetting resin sheet 4a, solar cells 1, 1,..., a current collecting plate, a rear plate 3 are placed on a hot press in this sequence. Output terminals 1a, 1b,... of the solar cells 1, 1... and current collecting electrodes 5a, 5b are made to bear on required wirings 7a and 7b of the rear material 3 and heated as air is evacuated to combine the surface material 2 and the solar cells 1, 1,... together without gaps. In this process, the output terminals 1a, 1b,... of the solar cells 1, 1,... and the current collecting electrodes 5a and 5b bearing on the wirings 7a and 7b are electrically and mechanically connected with the wirings 7a and 7b at the same time. By these processes a modularizing operation is simplified, so that the need for the skillness is alleviated.
    • 66. 发明专利
    • MANUFACTURE OF PHOTOVOLTAIC DEVICE
    • JPS63194370A
    • 1988-08-11
    • JP2672187
    • 1987-02-06
    • SANYO ELECTRIC CO
    • INOUE HIROSHIKISHI YASUO
    • H01L31/04
    • PURPOSE:To decrease the number of manufacturing processes by a method wherein the laminate of a semiconductor film and a second electrode film is etched from the second electrode film side, the second electrode film is divided into a plurality of photoelectric conversion regions while being dispersed to the laminates of the photoelectric conversion regions, the second electrode film section having a small area is removed and a through-hole through which one part of incident beams is transmitted is formed through the division process of the second electrode film. CONSTITUTION:Second electrode films 2a, 2b, 2c... as discrete light-receiving surface electrode are isolated and shaped onto the whole surface on a substrate 1 consisting of an insulating material such as transparent glass. Conductive members 3ab, 3bc... are formed in a beltlike manner while being deviated to sections near one adjacent space sections ab, bc.... An amorphous semiconductor film 4 effectively contributing to photoelectric conversion is formed onto approximately the whole surface on the substrate 1 including said surfaces. A second electrode film 5 is applied onto the whole surface on the substrate 1 including the semiconductor film 4 and each exposed section of the transparent electrode films 2a, 2b, 2c.... The laminate section of the amorphous semiconductor film 5 and a second electrode film 6 positioned on the surfaces of the conductive members 3ab, 3bc... is irradiated with pulse output type laser beams LB from the surface side of the laminate section, and second electrode films 5a, 5b... and the first electrode films 2b, 2c... are connected electrically.
    • 67. 发明专利
    • FORMATION OF FILM
    • JPS62127474A
    • 1987-06-09
    • JP26795685
    • 1985-11-28
    • SANYO ELECTRIC CO
    • HIRATANI TOSHIHIKOKISHI YASUO
    • C23C16/24C23C16/50
    • PURPOSE:To simultaneously form films uniform in film thickness and film quantity on many supports by arranging plural pieces of cylindrical supports between a couple of cylindrical discharge electrodes concentrically arranged and forming the films while rotating the supports on these axes and revolving the supports. CONSTITUTION:The cylindrical supports 3a-3h made of Al are fitted on the holding members 9 planted on a turntable in the prescribed intervals, and the inside of a reaction chamber 1 is decompressed and exhausted by an exhausting system 16 and the supports 3a-3h are heated at the prescribed temp. While introducing reaction gas into the trap chambers 14a, 14b through the gas feed pipes 12a-12h and feeding uniformly it to the inside of the reaction chamber 1 through the discharge holes 15, high frequency electric power is imparted between the electrodes 2a, 2b and the supports 3a-3h from an electric power source 20 and reaction gas is decomposed by exciting plasma. At this time, the supports 3a-3h are revolved by the turntable 4 by means of a motor 5 and also rotated on these axes by the fixed inner gears 11 and the spur gears 10 of the rotational mechanisms 8. Thereby films uniform in film thickness and film quality are formed in excellent productivity on the outside circumferential surfaces of every supports 3a-3h.
    • 69. 发明专利
    • Photovoltaic device
    • 光电器件
    • JPS6130083A
    • 1986-02-12
    • JP15170684
    • 1984-07-20
    • Sanyo Electric Co Ltd
    • KISHI YASUOTANIGUCHI HIROYUKI
    • H01L31/042H01L31/0224
    • H01L31/022425Y02E10/50
    • PURPOSE:To enable photoelectric transducer elements which are adjacent to each other to be electrically connected in series without causing disconnection attributable to a steep slope, by forming a connecting electrode film in such a manner that it once comes down along the inclined surface of the photoactive layer of each element at an adjacent spacing part. CONSTITUTION:The opposing surfaces of photoactive layers 3a, 3b at an adjacent spacing part respectively define inclined surfaces 3ai, 3bi which circularly slant in such a manner that, as the opposing surfaces come closer to a substrate 1, they come closer to each other. Connecting electrode films 6ab, 6bc respectively connect with second electrode film 4a, 4b of photoelectric transducer elements 5a, 5b and with end surfaces 4as, 4bs in the ineffective regions of the elements 5a, 5b and first lower so as to extend along the exposed inclined surfaces 3ai, 3bi of the layers 3a, 3b and then come down to the exposed parts 2ba, 2cb of first electrode films 2b, 2c which project from the layer 3b, 3c and which extend into adjacent spacing parts ab, bc. Accordingly, each of the connecting electrode films 6ab, 6bc is inclined, and the steep slope in made gentle by this configuration.
    • 目的:使得彼此相邻的光电传感器元件串联电连接,而不会引起由于陡坡引起的断开,通过以这样的方式形成连接电极膜,使得它一旦沿着光活性的倾斜表面下降 每个元件在相邻间隔部分的层。 构成:相邻间隔部分处的光敏层3a,3b的相对表面分别限定倾斜表面3ai,3bi,其以相对的表面更靠近基板1的方式圆形倾斜,使得它们彼此靠近。 连接电极膜6ab,6bc分别与元件5a,5b的无效区域中的光电转换元件5a,5b的第二电极膜4a,4b以及端面4as,4b连接,并且沿着暴露的倾斜 层3a,3b的表面3a,3b,然后下降到从层3b,3c突出并延伸到相邻间隔部分ab,bc的第一电极膜2b,2c的暴露部分2ba,2cb。 因此,连接电极膜6ab,6bc中的每一个都是倾斜的,并且通过这种构造使得陡峭的斜面变得平缓。
    • 70. 发明专利
    • Adhesion of film
    • 电影粘合
    • JPS59177921A
    • 1984-10-08
    • JP5299583
    • 1983-03-28
    • Sanyo Electric Co Ltd
    • KISHI YASUOMIZUKAMI ATSUO
    • H01L31/04H01L21/205
    • H01L31/022466
    • PURPOSE:To enable to make a mask to be adhered closely and to cover the surface of an insulating substrate even in a heated condition, to enable to prevent a film from oozing at the edge part, and to contrive to enhance precision of a process by a method wherein a material having nearly the same coefficient of linear expansion is used as a mask to cover the surface of the insulating substrate. CONSTITUTION:One main surface of an insulating substrate 10 manufactured of transparent glass is covered with a mask 11 having nearly the same coefficient of linear expansion with the substrate 10. First electrode layers 13a, 13b, 13c consisting of a transparent oxide electrode material of SnO2, In203-SnO2, etc. patterned in the previously decided pattern are adhered according to electron beam evaporation on the insulating substrate 10 through opening parts 12a, 12b, 12c dug in the mask 11. The temperature of the substrate at this time is held to the degree of 300 deg.C to obtain the desired transparency.
    • 目的:即使在加热条件下,也能够使掩模紧密地覆盖绝缘基板的表面,以防止膜在边缘部分渗出,并且旨在提高工艺的精度 使用具有几乎相同的线膨胀系数的材料作为掩模来覆盖绝缘基板的表面的方法。 构成:由透明玻璃制成的绝缘基板10的一个主表面用与基板10几乎相同的线性膨胀系数的掩模11覆盖。由SnO2的透明氧化物电极材料构成的第一电极层13a,13b,13c 通过在掩模11中挖出的开口部分12a,12b,12c,根据电子束蒸发,在绝缘基板10上粘贴以先前确定的图案形成的In 2 O 3 -SnO 2等。此时的基板温度保持 程度为300摄氏度,以获得所需的透明度。