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61. 发明授权

US08052142B2 Paper transport apparatus with inverting turn guide having range of curvature radius 有权
标题翻译：具有反转转向导轨的纸张传送装置具有曲率半径的范围
公开(公告)号：US08052142B2
公开(公告)日：2011-11-08
申请号：US12221716
申请日：2008-08-06
申请人： Yoshihide Sugiyama , Nobuki Tanimoto , Kazuya Yamamoto , Katsunori Takahashi
发明人： Yoshihide Sugiyama , Nobuki Tanimoto , Kazuya Yamamoto , Katsunori Takahashi
IPC分类号： B65H5/00
CPC分类号： B65H5/224 , B65H11/007 , B65H15/00 , B65H29/242 , B65H29/52 , B65H29/58 , B65H2301/3423 , B65H2404/693 , B65H2511/12 , B65H2511/13 , B65H2511/20 , B65H2220/01 , B65H2220/02 , B65H2220/11
摘要： A turn guide is disposed between a first transport surface and a second transport surface on which a sheet is transported while being sucked. The turn guide has a plurality of guide ribs. The plurality of guide ribs have curved inverting transfer surfaces from an inversion start point corresponding to a first transport surface to an inversion end point corresponding to a second transport surface.
摘要翻译：转向引导件设置在第一输送表面和第二输送表面之间，在该第一输送表面和第二输送表面之间输送纸张同时被吸入。转动导向件具有多个导向肋。多个引导肋具有从对应于第一输送面的反转开始点到对应于第二输送面的反转端点的弯曲反转转移面。

62. 发明申请

US20110057746A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20110057746A1
公开(公告)日：2011-03-10
申请号：US12781848
申请日：2010-05-18
申请人： Kazuya Yamamoto , Miyo Miyashita , Hitoshi Kurusu , Tomoyuki Asada
发明人： Kazuya Yamamoto , Miyo Miyashita , Hitoshi Kurusu , Tomoyuki Asada
IPC分类号： H01P5/18
CPC分类号： H01P5/184 , H01P5/18
摘要： A directional coupler includes capacitive elements electrically connected to a coupled port and an isolated port, respectively, for a coupled line on a chip (on-chip). The capacitive elements serve as matching capacitive elements and may be MIM (Metal Insulator Metal) capacitors on a substrate. A first end of a first of the capacitive elements is connected between the coupled port and the coupled line and a second end is grounded. A first end of a second of the capacitive elements is connected between the isolated port and the coupled line and a second end is grounded.
摘要翻译：定向耦合器包括分别电连接到芯片上（芯片上）上的耦合线的耦合端口和隔离端口的电容元件。电容元件用作匹配的电容元件，并且可以是衬底上的MIM（金属绝缘体金属）电容器。第一电容元件的第一端连接在耦合端口和耦合线路之间，第二端接地。第二电容元件的第一端连接在隔离端口和耦合线之间，第二端接地。

63. 发明申请

US20100127689A1 REFERENCE VOLTAGE GENERATION CIRCUIT AND BIAS CIRCUIT 有权
标题翻译：参考电压发生电路和偏置电路
公开(公告)号：US20100127689A1
公开(公告)日：2010-05-27
申请号：US12417730
申请日：2009-04-03
申请人： Kazuya Yamamoto , Miyo Miyashita
发明人： Kazuya Yamamoto , Miyo Miyashita
IPC分类号： G05F3/16 , G05F1/10
CPC分类号： G05F3/185
摘要： A reference voltage generation circuit comprises: a first depletion mode FET; a second depletion mode FET; a first resistor; a first bipolar transistor; a second resistor; a second bipolar transistor; a third bipolar transistor; a third resistor; a third depletion mode FET having its drain connected to a second end of the first resistor and to the collector of the first bipolar transistor; and a fourth bipolar transistor having its base and collector connected to the gate and the source of the third depletion mode FET, and its emitter grounded, wherein source voltage of the second depletion mode FET is output as a reference voltage.
摘要翻译：参考电压产生电路包括：第一耗尽型FET; 第二耗尽型FET; 第一个电阻; 第一双极晶体管; 第二电阻器; 第二双极晶体管; 第三双极晶体管; 第三电阻; 第三耗尽型FET，其漏极连接到第一电阻器的第二端和第一双极晶体管的集电极; 以及第四双极晶体管，其基极和集电极连接到第三耗尽型FET的栅极和源极，并且其发射极接地，其中第二耗尽型FET的源极电压作为参考电压输出。

64. 发明申请

US20100109235A1 SHEET TRANSPORT APPARATUS 有权
标题翻译：板材运输设备
公开(公告)号：US20100109235A1
公开(公告)日：2010-05-06
申请号：US12450243
申请日：2008-08-28
申请人： Yoshihide Sugiyama , Kazuya Yamamoto , Katsunori Takahashi , Hidemasa Kanada , Junichi Kakuta
发明人： Yoshihide Sugiyama , Kazuya Yamamoto , Katsunori Takahashi , Hidemasa Kanada , Junichi Kakuta
IPC分类号： B65H3/12
CPC分类号： B65H15/00 , B65H5/224 , B65H5/38 , B65H29/242 , B65H29/245 , B65H2220/09 , B65H2301/3423 , B65H2404/612 , B65H2406/122 , B65H2406/3662 , B65H2406/42
摘要： Provided is a sheet inverting apparatus wherein members, such as a roller, are not brought into contact with the printed surface of a sheet at all, and the occurrence of dirt can be prevented by eliminating friction of ink on the surface of the sheet. A first transport apparatus and a second transport apparatus each have a plurality of transport belts which move on transport tracks along sheet transport directions and a suction box which sucks the sheet on the transport belts through suction holes formed on the transport belts. A turn guide arranged between the first transport apparatus and the second transport apparatus has a plurality of guide ribs disposed between the transport belts. Each of the guide ribs coming into slidable contact with the sheet forms a curved inverting transfer surface from an inversion starting point side to an inversion end point side.
摘要翻译：提供了一种片材翻转装置，其中诸如辊的构件根本不与片材的印刷表面接触，并且可以通过消除片材表面上的墨水的摩擦来防止污垢的发生。第一输送装置和第二输送装置分别具有沿着输送方向在输送轨道上移动的多个输送带，以及通过形成在输送带上的吸孔将纸张吸附在输送带上的吸引箱。布置在第一输送装置和第二输送装置之间的转向引导件具有设置在输送带之间的多个引导肋。与片材滑动接触的每个引导肋从反转起点侧到反转端点侧形成弯曲的反转转移面。

65. 发明申请

US20090295540A1 Facsimile machine, facsimile notification system, and communication terminal device 有权
标题翻译：传真机，传真通知系统和通信终端设备
公开(公告)号：US20090295540A1
公开(公告)日：2009-12-03
申请号：US12385857
申请日：2009-04-22
申请人： Kazuya Yamamoto
发明人： Kazuya Yamamoto
IPC分类号： H04L9/32 , H04N1/00
CPC分类号： H04N1/4413 , H04N1/32021 , H04N1/32133 , H04N1/32363 , H04N1/32395 , H04N1/444 , H04N2201/0093 , H04N2201/3208 , H04N2201/3209
摘要： A facsimile machine receives image data, generates a password for received image data, assigns the generated password to the received image data, and stores the received image data. Information indicating a notification destination is extracted from the received image data, and the notification destination is notified of the password. The received image data are output responsive to subsequent input of the password at the facsimile machine. This scheme provides password protection without forcing users to register and remember passwords, and without the risk that a compromised password may be used for unauthorized output of facsimile data received later.
摘要翻译：传真机接收图像数据，生成接收到的图像数据的密码，将生成的密码分配给接收到的图像数据，并存储接收到的图像数据。从接收到的图像数据中提取表示通知目的地的信息，通知密码。接收到的图像数据是响应于在传真机上随后输入密码输出的。该方案提供密码保护，而不强制用户注册和记住密码，并且没有风险，密码可能被用于未经授权输出稍后收到的传真数据。

66. 发明授权

US07602238B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US07602238B2
公开(公告)日：2009-10-13
申请号：US12098538
申请日：2008-04-07
申请人： Takayuki Matsuzuka , Kazuya Yamamoto
发明人： Takayuki Matsuzuka , Kazuya Yamamoto
IPC分类号： H03F1/14
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/302 , H03F1/303 , H03F3/19 , H03F2200/165 , H03F2200/168 , H03F2200/171 , H03F2200/18 , H03F2200/411 , H03F2200/451
摘要： An amplifier element amplifies RF signals. An emitter follower unit drives the amplifier element at a constant voltage corresponding to a reference voltage supplied to a reference terminal from outside. A current injection unit drives the amplifier element at a constant current corresponding to the reference voltage. An analog control unit analogically controls the output voltage of the emitter follower unit in correspondence with the control voltage supplied to a control terminal from outside. A mode switching unit switches whether the emitter follower unit is operated or not in correspondence with the control voltage.
摘要翻译：放大器元件放大RF信号。射极跟随器单元以与从外部提供给参考端子的参考电压相对应的恒定电压来驱动放大器元件。电流注入单元以对应于参考电压的恒定电流驱动放大器元件。模拟控制单元对应于从外部提供给控制端子的控制电压模拟地控制发射极跟随器单元的输出电压。模式切换单元根据控制电压来切换射极跟随器单元是否工作。

67. 发明申请

US20090114156A1 Film formation apparatus for semiconductor process 审中-公开
标题翻译：用于半导体工艺的成膜装置
公开(公告)号：US20090114156A1
公开(公告)日：2009-05-07
申请号：US12285512
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/45525 , H01L21/3185
摘要： A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.
摘要翻译：一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。

68. 发明申请

US20090051437A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20090051437A1
公开(公告)日：2009-02-26
申请号：US11946931
申请日：2007-11-29
申请人： Kazuya Yamamoto , Miyo Miyashita
发明人： Kazuya Yamamoto , Miyo Miyashita
IPC分类号： H03G3/10
CPC分类号： H03F1/302 , H03F3/19 , H03F2200/18 , H03F2200/447 , H03F2200/451 , H03G1/0035
摘要： An emitter follower circuit applies to an input terminal of a second amplifying device a voltage according to a reference voltage applied to a reference terminals. First and second resistors are connected in series between the reference terminal and an input terminal of a first amplifying device. The collector of a first transistor is connected to the reference terminal, and a control voltage is applied to the base of the first transistor. A third resistor is connected between the emitter of the first transistor and a grounding point. A current mirror circuit draws a current proportional to a current input from the collector of the first transistor from a connection point of the first and second resistors.
摘要翻译：射极跟随器电路根据施加到参考端子的参考电压向第二放大器件的输入端子施加电压。第一和第二电阻串联连接在参考端和第一放大器的输入端之间。第一晶体管的集电极连接到参考端子，并且控制电压被施加到第一晶体管的基极。第三电阻连接在第一晶体管的发射极和接地点之间。电流镜电路从第一和第二电阻器的连接点吸取与来自第一晶体管的集电极的电流成比例的电流。

69. 发明授权

US07408412B2 Power amplifier and wireless communication device 有权
标题翻译：功率放大器和无线通信设备
公开(公告)号：US07408412B2
公开(公告)日：2008-08-05
申请号：US11470642
申请日：2006-09-07
申请人： Kazuya Yamamoto , Tomoyuki Asada
发明人： Kazuya Yamamoto , Tomoyuki Asada
IPC分类号： H03G3/30
CPC分类号： H03F1/302 , H03F1/32 , H03F1/52 , H03F3/191 , H03F3/195 , H03F3/24 , H03F3/4508 , H03F3/45475 , H03F2200/18 , H03F2200/207 , H03F2200/393 , H03F2200/411 , H03F2200/435 , H03F2200/451 , H03F2200/462 , H03F2200/471 , H03F2200/474 , H03F2200/78 , H03F2203/45481 , H03F2203/45646 , H03F2203/45672 , H03F2203/45722
摘要： There are provided a power amplifying transistor, a bias circuit which supplies a bias current to the base of the power amplifying transistor, a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor, and a control circuit which, when the peak value of the collector voltage becomes higher than a voltage set in advance, controls the bias circuit to increase the bias current.
摘要翻译：提供了功率放大晶体管，向功率放大晶体管的基极提供偏置电流的偏置电路，检测功率放大晶体管的集电极电压的峰值的电流镜电路，以及控制电路，当集电极电压的峰值变得高于预先设定的电压时，控制偏置电路来增加偏置电流。

70. 发明申请

US20080003362A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080003362A1
公开(公告)日：2008-01-03
申请号：US11819500
申请日：2007-06-27
申请人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
发明人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译：使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

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