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    • 62. 发明授权
    • Gate configuration for nanowire electronic devices
    • 纳米线电子器件的栅极配置
    • US07473943B2
    • 2009-01-06
    • US11233398
    • 2005-09-22
    • Shahriar MostarshedJian ChenFrancisco LeonYaoling PanLinda T. Romano
    • Shahriar MostarshedJian ChenFrancisco LeonYaoling PanLinda T. Romano
    • H01L29/80
    • H01L29/0665B82Y10/00H01L29/0673H01L29/42384H01L29/42392H01L29/775H01L29/785H01L29/78645H01L29/78681H01L29/7869Y10S977/762Y10S977/932Y10S977/938
    • Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
    • 描述了具有改进的门结构的电子设备的方法,系统和装置。 电子装置包括至少一个纳米线。 栅极接触沿至少一个纳米线的长度的至少一部分定位。 介电材料层在栅极接触和至少一个纳米线之间。 源极触点和漏极触点与至少一个纳米线接触。 源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。 另一方面,一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。 环形第一栅极区域沿着纳米线长度的一部分包围纳米线。 第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。 源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。
    • 63. 发明授权
    • Providing stress uniformity in a semiconductor device
    • 在半导体器件中提供应力均匀性
    • US07473623B2
    • 2009-01-06
    • US11428022
    • 2006-06-30
    • Jian ChenMark W. Michael
    • Jian ChenMark W. Michael
    • H01L21/3205H01L21/4763
    • H01L21/823418H01L21/823814H01L29/7843H01L29/7848
    • A method includes forming a plurality of functional features on a semiconductor layer in a first region. A non-functional feature corresponding to the functional feature is formed adjacent at least one of the functional features disposed on a periphery of the region. A stress-inducing layer is formed over at least a portion of the functional features and the non-functional feature. A device includes a semiconductor layer, a first dummy gate electrode, and a stress-inducing layer. The plurality of transistor gate electrodes is formed above the semiconductor layer. The plurality includes at least a first end gate electrode, a second end gate electrode, and at least one interior gate electrode. The first dummy gate electrode is disposed proximate the first end gate electrode. The stress-inducing layer is disposed over at least a portion of the plurality of transistor gate electrodes and the first dummy gate electrode.
    • 一种方法包括在第一区域中的半导体层上形成多个功能特征。 相邻于功能特征的非功能特征形成在邻近设置在区域周边的功能特征中的至少一个功能特征。 在功能特征和非功能特征的至少一部分上形成应力诱导层。 一种器件包括半导体层,第一伪栅电极和应力诱导层。 多个晶体管栅电极形成在半导体层的上方。 多个至少包括第一端栅极电极,第二端栅极电极和至少一个内部栅极电极。 第一虚拟栅电极设置在第一端栅电极附近。 应力感应层设置在多个晶体管栅极电极和第一虚拟栅电极的至少一部分上。
    • 67. 发明申请
    • MICROWAVE SEWAGE TREATING APPARATUS
    • 微波炉污水处理设备
    • US20080170974A1
    • 2008-07-17
    • US12014753
    • 2008-01-15
    • Jian Chen
    • Jian Chen
    • B01J19/08
    • C02F1/302C02F2303/24
    • A microwave sewage treating apparatus is disclosed. The apparatus comprises: a sewage source for supplying sewage; a microwave radiation system for irradiating the sewage with microwave, the microwave radiation system including a microwave generator for generating microwave, a microwave radiation chamber in which the sewage is irradiated with the microwave generated by the microwave generator, and a microwave radiation part for inputting the microwave generated by the microwave generator into the microwave radiation chamber; and a sewage pipe disposed in the microwave radiation chamber and having one end connected with the sewage source and the other end for outputting the sewage irradiated with the microwave. The microwave sewage treating apparatus according to the present disclosure is high in sewage treatment and low in operational cost and can treat various sewages. Indexes of water outputted by treating the sewage with the microwave sewage treating apparatus can completely reach discharge standards.
    • 公开了一种微波污水处理装置。 该设备包括:用于供应污水的污水源; 用微波照射污水的微波辐射系统,微波辐射系统包括微波发生器,用于产生微波;微波辐射室,其中污水用微波发生器产生的微波照射;微波辐射部分,用于输入微波辐射部分, 由微波发生器产生的微波进入微波辐射室; 以及设置在微波辐射室中的污水管,其一端与污水源连接,另一端用于输出用微波照射的污水。 根据本公开的微波污水处理装置,污水处理量高,运行成本低,可以处理各种污水。 用微波污水处理设备处理污水输出的水指标可以完全达到排放标准。