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61. 发明授权

US06358793B1 Method for localized masking for semiconductor structure development 失效
标题翻译：半导体结构开发的局部掩蔽方法
公开(公告)号：US06358793B1
公开(公告)日：2002-03-19
申请号：US09258471
申请日：1999-02-26
申请人： Donald L. Yates , Garry A. Mercaldi
发明人： Donald L. Yates , Garry A. Mercaldi
IPC分类号： H01L218242
CPC分类号： H01L28/92 , G03F7/0035 , G03F7/201 , H01L21/0273 , H01L21/0274 , H01L21/0275 , H01L21/32139 , H01L27/10852 , H01L28/84 , H01L28/91
摘要： Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
摘要翻译：用于集成电路的容器结构及其制造方法，而不使用机械平面化（例如化学机械平面化（CMP）），从而消除了CMP引起的缺陷和变化。该方法利用在非机械去除暴露的表面层期间的孔的局部掩蔽来保护孔的内部。通过将抗蚀剂层与电磁或热能的差分曝光来实现局部掩蔽。容器结构适用于并入这种存储单元的存储器单元和装置以及其它集成电路。

62. 发明授权

US06350322B1 Method of reducing water spotting and oxide growth on a semiconductor structure 失效
标题翻译：减少半导体结构上的水斑和氧化物生长的方法
公开(公告)号：US06350322B1
公开(公告)日：2002-02-26
申请号：US08814900
申请日：1997-03-21
申请人： Donald L. Yates
发明人： Donald L. Yates
IPC分类号： B08B700
CPC分类号： H01L21/67034 , H01L21/02052 , H01L21/02057 , H01L21/67028 , H01L21/67057 , Y10S134/902
摘要： The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface. The semiconductor structure is drawn out of the DI water bath at a rate that allows substantially all DI water, and contaminants therein, to be entrained beneath the IPA-DI water interface. In a second embodiment of the present invention, chemical treatment, rinsing, and drying are carried out in a single vessel. In a third embodiment of the present invention, a retrofit spray/dump rinser with a lid is used for rinsing and drying according to the method of the present invention.
摘要翻译：本发明涉及一种在改进的常规气体蚀刻/漂洗或干燥容器中清洗和干燥半导体结构的方法。在本发明的第一实施例中，将半导体结构放置在第一处理容器中并进行化学处理。化学处理后，将半导体结构直接转移到第二处理容器，在其中用DI水冲洗然后干燥。第二处理容器充满了DI水和对环境如氮气是惰性的气体，以形成在洗涤期间保持惰性气氛的去离子水浴。接下来，将载有IPA蒸气的惰性气体载体进料到第二处理容器中。在足够的时间之后，在去离子水浴表面上形成一层IPA以形成IPA-DI水界面。将半导体结构从DI水浴中抽出，其速率允许基本上所有的去离子水和其中的污染物被夹带在IPA-DI水界面下面。在本发明的第二个实施方案中，化学处理，漂洗和干燥在单个容器中进行。在本发明的第三实施例中，根据本发明的方法，使用具有盖的改型喷雾/倾倒式冲洗机进行漂洗和干燥。

63. 发明授权

US5939336A Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates 有权
公开(公告)号：US5939336A
公开(公告)日：1999-08-17
申请号：US138045
申请日：1998-08-21
申请人： Donald L. Yates
发明人： Donald L. Yates
IPC分类号： C09K13/00 , H01L21/306
CPC分类号： H01L21/02052 , C09K13/00
摘要： Compositions of ammonium fluoride, propylene glycol, and water and methods of using these compositions to remove etch residues from silicon substrates which result from plasma or reactive ion etching of silicon substrate are provided. Not only do the compositions of the present invention overcome the environmental concerns associated with the use of ethylene glycol, but unlike previous compositions of ammonium fluoride in propylene glycol which are acidic, the compositions of the present invention are neutral to slightly basic (i.e., pH 7 to about pH 8). Hence, they remove etch residues from silicon substrates with minimal attack on other features on the silicon substrates.

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