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    • 62. 发明授权
    • Image forming method
    • 图像形成方法
    • US07183027B2
    • 2007-02-27
    • US10795395
    • 2004-03-09
    • Ichiro TakegawaTsukasa Matsuda
    • Ichiro TakegawaTsukasa Matsuda
    • G03G1/46
    • G03G7/0013G03G5/0539G03G5/0564G03G5/0578G03G7/0006G03G7/004
    • An image forming method includes a photoreceptor preparation step, a coated paper preparation step, a charging step, an exposure step, a development step, and a transfer step. The electrophotographic photoreceptor has a conductive support and a photosensitive layer disposed on the conductive support. The photosensitive layer on the farthest side from the conductive support, includes a surface layer containing at least one selected from the group consisting of fluorine based resin fine particles, a carbonate resin, an arylate resin. The coated paper has a substrate and a coated layer, disposed on at least one surface of the substrate. The coated layer contains an adhesive containing latex having a glass transition temperature of 20° C. or higher and a pigment, and the surface, opposite to the substrate, of the coated layer has a glossiness of 10% or more.
    • 图像形成方法包括感光体制备步骤,涂布纸制备步骤,充电步骤,曝光步骤,显影步骤和转印步骤。 电子照相感光体具有导电性支持体和配置在导电性支持体上的感光层。 与导电性支持体最远侧的感光层包含含有选自氟系树脂微粒,碳酸酯树脂,芳基化物树脂中的至少一种的表层。 涂布纸具有设置在基板的至少一个表面上的基板和涂层。 涂层含有玻璃化转变温度为20℃以上的粘合剂含胶乳和颜料,并且与涂层相对的与基材相反的表面的光泽度为10%以上。
    • 64. 发明授权
    • Method for forming film
    • 薄膜成膜方法
    • US07060614B2
    • 2006-06-13
    • US10333963
    • 2001-07-25
    • Hotaka IshizukaTsukasa Matsuda
    • Hotaka IshizukaTsukasa Matsuda
    • H01L21/44
    • H01L21/28568C23C16/02C23C16/0218C23C16/14H01L21/28518
    • In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.
    • 在根据本发明的沉积方法中,首先将衬底(10)布置在处理容器中以执行加热步骤。 然后,将含Si的气体,例如SiH 4气体供给到处理容器中,以在基板上执行用作预处理步骤的起始步骤(ST2)。 然后,将沉积气体供给到处理容器中以进行沉积步骤(ST3)。 通过将含Si气体的分压设定为不低于50Pa(不进行加热步骤时不小于100Pa)进行启动步骤(ST2),可以 稳定地生产具有良好表面状态的膜。