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    • 64. 发明授权
    • Zinc oxide semiconductor member formed on silicon substrate
    • 形成在硅衬底上的氧化锌半导体部件
    • US06589362B2
    • 2003-07-08
    • US09973149
    • 2001-10-09
    • Koichi Haga
    • Koichi Haga
    • H01L2912
    • H01L33/28H01L31/109H01L31/1836H01L33/16Y02E10/50Y10T29/41
    • The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen fluoride (HF) diluted with pure water to 10% (process(1)). The surface of the silicon substrate from which the oxide film has been removed is covered with hydrogen atoms. A large amount of plasma energy is applied to the silicon substrate in a process (2) for depositing a ZnO thin film thereon by sputtering. Hydrogen is dissociated by this energy at low temperature as well as a thin film buffer layer, in which an amorphous material and fine crystals are mixed, is formed by easing the difference of lattice intervals between silicon and zinc oxide. Next, in a process (3), a ZnO thin film of high quality is formed on the buffer layer by MO-CVD using it as a seed crystal. With this arrangement, a zinc oxide semiconductor member suitable for a light receiving element can be formed on a silicon substrate.
    • 硅衬底的表面覆盖有几十埃厚度的天然氧化物膜。 在初始过程中,用纯水稀释至10%的氟化氢(HF)除去天然氧化物膜(工艺(1))。 已除去氧化膜的硅衬底的表面被氢原子覆盖。 在用于通过溅射在其上沉积ZnO薄膜的工艺(2)中,大量的等离子体能量被施加到硅衬底。 通过缓解硅和氧化锌之间的晶格间隔的差异,形成了通过低温下的能量解离氢以及混合无定形材料和微细晶体的薄膜缓冲层。 接下来,在工序(3)中,通过使用它作为晶种的MO-CVD在缓冲层上形成高品质的ZnO薄膜。 利用这种布置,可以在硅衬底上形成适合于光接收元件的氧化锌半导体元件。