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    • 61. 发明专利
    • IMAGE SENSOR STRUCTURE
    • SG11201911653UA
    • 2020-01-30
    • SG11201911653U
    • 2018-11-02
    • ILLUMINA INC
    • CAI XIUYUAGAH ALIFUNG TRACY HDEHLINGER DIETRICH
    • H01L27/146
    • An example image sensor structure (100) includes an image layer (108) with an array of light detectors (112) disposed therein. A device stack (126) is disposed over the image layer (108), with an array of light guides (130) disposed therein. Each light guide (130) is associated with at least one light detector of the array of light detectors (112). A passivation stack (104) is disposed over the device stack (126), comprising a passivation layer (142) and a chemical protection layer (144) disposed over the passivation layer (142), and preferably including a bottom surface (140) in direct contact with a top surface (132) of the light guides (130). An array of nanowells (120) is disposed in a top layer (144) of the passivation stack (104), with the contours of the nanowells (120) formed by a top layer (144) of the passivation stack (104). Each nanowell (120) is associated with a light guide (130). A crosstalk blocking metal structure (102/106) is disposed in the passivation stack (104), which reduces crosstalk within the passivation stack (104).
    • 66. 发明专利
    • SENSORS HAVING INTEGRATED PROTECTION CIRCUITRY
    • FI3615922T3
    • 2022-09-30
    • FI18791184
    • 2018-04-19
    • ILLUMINA INC
    • FUNG TRACY HELENCAI XIUYUKWOK LISATRAN HAISAMIEE KEVANQIANG LIANGLIANGBOYANOV BOYAN
    • G01N33/543B01L3/00C12Q1/68G01N21/62G01N21/64G01N21/77
    • An example sensor includes a detection device, including an optical waveguide, an optical sensor operatively associated with the optical waveguide and a device circuitry, including a reagent electrode, a first embedded metal layer electrically connected to the reagent electrode; and a second embedded metal layer electrically connected to the optical sensor wherein the first embedded metal layer is spaced from the second embedded metal layer by an electrically isolating gap, at least a portion of a passivation layer being in contact with the first embedded metal layer and an input region of the optical waveguide, the at least the portion of the passivation layer having a reaction site at least partially adjacent to the input region of the optical waveguide; and a lid operatively connected to the passivation layer to partially define a flow channel between the lid and the reaction site, wherein the reagent electrode is positioned to be in contact with a reagent to be introduced into the flow channel. A method for performing a sensing operation of a sensor in response to a reaction at the reaction site involving at least some reaction component of the reagent and during the sensing operation, applying an electrical bias that renders the reagent electrode one of an anode or a cathode and the embedded metal layer the other of the cathode or the anode, thereby providing cathodic protection or anodic protection to the embedded metal layer, is also disclosed.