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61. 发明授权

US06853520B2 Magnetoresistance effect element 有权
标题翻译：磁阻效应元件
公开(公告)号：US06853520B2
公开(公告)日：2005-02-08
申请号：US09944075
申请日：2001-09-04
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译：提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。

62. 发明授权

US6052262A Magneto-resistance effect element and magnetic head 失效
标题翻译：磁阻效应元件和磁头
公开(公告)号：US6052262A
公开(公告)日：2000-04-18
申请号：US38848
申请日：1998-03-12
申请人： Yuzo Kamiguchi , Akiko Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , H01L43/08 , G11B2005/3996 , G11B5/012
摘要： A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.
摘要翻译：一种磁电阻效应元件，包括自旋阀膜，该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和非磁性层。在第一和第二磁性层中，在至少一个磁性层中，构成磁性层的晶粒的紧密堆积面各向同性地分散。通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下，通过使构成下层的晶粒的各向同性紧密堆积面分散，可以得到这样的磁性层。根据包含这种自旋阀膜的磁阻效应元件，在保持大的MR变化率的同时，例如，磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。此外，可以提供优异的软磁性。

63. 发明授权

US07130163B2 Magnetoresistance effect element 有权
公开(公告)号：US07130163B2
公开(公告)日：2006-10-31
申请号：US10958250
申请日：2004-10-06
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

64. 发明授权

US06348274B1 Magnetoresistive element and magnetic recording apparatus 失效
标题翻译：磁阻元件和磁记录装置
公开(公告)号：US06348274B1
公开(公告)日：2002-02-19
申请号：US09472144
申请日：1999-12-27
申请人： Yuzo Kamiguchi , Hiromi Yuasa , Masashi Sahashi , Hitoshi Iwasaki
发明人： Yuzo Kamiguchi , Hiromi Yuasa , Masashi Sahashi , Hitoshi Iwasaki
IPC分类号： G11B566
CPC分类号： H01F10/3263 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/66 , G11B2005/3996 , H01F10/3259 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1171
摘要： A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.
摘要翻译：磁阻元件包括它们之间的钉扎层，自由层和非磁性间隔膜。被钉扎层由第一强磁性金属层，第一铁磁金属层上的第一非金属层，第一非金属层上的第二非金属层和第一非金属层的组成不同而构成，以及第二非铁金属层上的第二铁磁金属层。因此，可以用于磁记录装置的磁头中的磁阻元件确保了被钉扎膜的良好的偏置特性，同时保持了镜面自旋阀结构的大的MR变化率，同时在软的磁性。

65. 发明授权

US6111729A Magnetoresistance effect element 有权
标题翻译：磁阻效应元件
公开(公告)号：US6111729A
公开(公告)日：2000-08-29
申请号：US313767
申请日：1999-05-18
申请人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/00 , G11B5/3967
摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.
摘要翻译：设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。

66. 发明授权

US08259419B2 Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen 有权
标题翻译：磁阻效应元件具有含有氧化物作为主要成分且含有不与氧结合的磁性过渡金属元素的层
公开(公告)号：US08259419B2
公开(公告)日：2012-09-04
申请号：US13242190
申请日：2011-09-23
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译：提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。

67. 发明申请

US20090109581A1 MAGNETORESISTANCE EFFECT ELEMENT 有权
标题翻译：磁阻效应元素
公开(公告)号：US20090109581A1
公开(公告)日：2009-04-30
申请号：US12347543
申请日：2008-12-31
申请人： Hideaki FUKUZAWA , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki FUKUZAWA , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译：提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。

68. 发明授权

US07476414B2 Magnetoresistance effect element 有权
公开(公告)号：US07476414B2
公开(公告)日：2009-01-13
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： B05B5/12 , H05H1/24
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

69. 发明申请

US20050094322A1 Magnetoresistance effect element 有权
公开(公告)号：US20050094322A1
公开(公告)日：2005-05-05
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , G11B5/127 , C23C14/00
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

70. 发明授权

US06088195A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06088195A
公开(公告)日：2000-07-11
申请号：US827122
申请日：1997-03-27
申请人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/18 , H01F10/187 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/3281 , H01L43/08 , G11B2005/3996 , G11B5/3916 , G11B5/3932 , G11B5/3967 , H01F10/3295
摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).
摘要翻译：磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜，设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向磁化彼此不同。此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

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