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    • 64. 发明申请
    • MANUFACTURING METHOD OF LIGHT EMITTING DEVICE AND MANUFACTURING DEVICE THEREOF
    • 发光装置的制造方法及其制造装置
    • US20090289548A1
    • 2009-11-26
    • US12512418
    • 2009-07-30
    • Junya MARUYAMAToru TAKAYAMAYumiko OHNO
    • Junya MARUYAMAToru TAKAYAMAYumiko OHNO
    • H01J1/62
    • H01L51/524H01L51/5259H01L51/56
    • It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant.The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    • 本发明的目的是提供一种具有防止氧气和水分到达发光器件的结构的发光器件,并提供其制造方法。 本发明的另一个目的是在不封装干燥剂的情况下以较少的步骤密封发光器件。 本发明提供了一种结构,其中像素区域13被包括间隔物(填料,微小颗粒和/或类似物)的第一密封材料(具有比第二密封材料更高的粘度)16包围, 两个衬底,填充有几滴透明的第二密封材料17a,其在该区域中扩散; 并通过使用第一密封材料16和第二密封材料17密封。
    • 65. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20090275196A1
    • 2009-11-05
    • US12480752
    • 2009-06-09
    • Shunpei YAMAZAKIToru TAKAYAMAJunya MaruyamaYumiko OHNO
    • Shunpei YAMAZAKIToru TAKAYAMAJunya MaruyamaYumiko OHNO
    • H01L21/283
    • H01L27/1218H01L23/291H01L27/1214H01L27/1266H01L27/3244H01L29/66757H01L29/78603H01L51/0002H01L51/0021H01L51/0024H01L51/003H01L2221/68368H01L2924/0002Y10S438/928Y10S438/982H01L2924/00
    • (Object)It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
    • (对象)本发明的目的是提供一种不会对被剥离层造成损害的剥离方法,并且不仅允许以小的表面积剥离层,而且还可以使用剥离层 大的表面积要完全剥离。 此外,本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地,目的是将由TFT表示的各种元素(薄膜二极管,包含硅的PIN结的光电转换元件或硅电阻元件)粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 (解决方案)当在基板上设置金属层11时,设置与金属层11接触的氧化物层12,形成被剥离层13,并且用激光束照射金属层11 进行氧化并形成金属氧化物层16,通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面,可以进行清晰的分离。
    • 66. 发明申请
    • SEMICONDUCTOR DEVICE FORMING METHOD
    • 半导体器件形成方法
    • US20080258147A1
    • 2008-10-23
    • US12143035
    • 2008-06-20
    • Hongyong ZHANGToru TAKAYAMAYasuhiko TAKEMURAAkiharu MIYANAGAHisashi OHTANI
    • Hongyong ZHANGToru TAKAYAMAYasuhiko TAKEMURAAkiharu MIYANAGAHisashi OHTANI
    • H01L29/04
    • H01L29/045G09G2300/0408H01L21/02532H01L21/02672H01L27/1277H01L27/1296H01L29/66757
    • In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
    • 在具有适于批量生产的结晶硅有源层的薄膜晶体管(TFT)中,通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外,形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后,层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面,Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先,将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式,形成具有改善的结晶度的晶体硅膜。