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    • 68. 发明专利
    • METHOD OF TRANSFERRING THIN PLATE WORK TO PROCESSING HOLDER
    • JPH11219998A
    • 1999-08-10
    • JP2295498
    • 1998-02-04
    • HITACHI LTD
    • ISHIDA YOSHIHIROMORIYAMA SHIGEOHARADA KUNIOSUGAYA MASAKAZUKUGAYA TAKASHIOTSUKI SHIGEOKAWAI AKINARINISHIMURA SADAYUKI
    • H01L21/677H01L21/68
    • PROBLEM TO BE SOLVED: To keep the centers of a processing holder and a transfer pad aligned with each other by a method wherein a wafer is restrained from moving sideways in a horizontal direction by a surface tension layer formed between the upside of the transfer pad and the underside of the water, and a main centering operation is carried out resting on the basis of the outer shape of a control ring provided to the underside of a processing holder. SOLUTION: A small amount of pure water 4 is made to flow constantly over the upside of a transfer pad 2 to form a surface tension layer 4a. In this state, when a wafer 1 is placed thereon, the wafer 1 is prevented from moving sideways in a horizontal direction by the physical action of a surface tension. Then, the transfer pad 2 is made to descend according to the timing of a processing holder 3, and a tapered ring 5 and a press pin 23 are made to descend last. When the tapered ring 5 descends, a plate cam 19 descends together through the intermediary of a finger support 17 engaged with the tapered ring 5, a finger 6 moves in a closing direction along the shape of the plate cam 19 and stops when the upper inner wall 6a of the finger 6 is brought into contact with the outer shape of a control ring 7. At this point, the diameter of an inscribed circle formed with the middle inner wall 6b of the finger 6 is so set as to satisfy a formula, diameter of wafer
    • 69. 发明专利
    • SUBSTRATE MANIPULATOR
    • JPH08330395A
    • 1996-12-13
    • JP12999995
    • 1995-05-29
    • HITACHI LTD
    • MIYATA TOSHIMITSUHARADA KUNIOFUJITA MINORUMURAKAMI HIDEKAZU
    • C30B25/10C30B25/12H01L21/203H01L21/205H01L21/68H01L21/683
    • PURPOSE: To reduce a heavy metal contamination to a substrate and make the quality of a semiconductor thin film formed on the substrate good, by covering with quartz a heating source and the portions of their temperatures being increased through the heating source. CONSTITUTION: In a substrate manipulator for performing the substrate heating of the device for forming a semiconductor thin film in a vacuum, a heating source 3 opposed to a substrate 6 and the portions of their temperatures being increased by the heating source 3 are covered with quartz to reduce a heavy metal contamination to the substrate 6. For example, the heating portion of the substrate manipulator has several sheets of thermal shield plates 9 on an SiC heater 3, and is fastened to a thermal insulation plate 10 made of alumina. The thermal insulation plate 10 is fastened to a metallic plate 12 via a spacer 11, and the whole of the heating portion has the structure of it being held by a holder 13. Further, the whole of the heating portion comprising the SiC heater 3 and the thermal shield plates 9, etc., is covered with a quartz cover 5, and the substrate 6 is mounted on a substrate holder 7 made of quartz to be heated by the SiC heater 3 via the quartz cover 5.