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61. 发明专利

JPS6379389A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS6379389A
公开(公告)日：1988-04-09
申请号：JP22352686
申请日：1986-09-24
申请人： HITACHI LTD
发明人： KAYANE NAOKI , MISHIMA TOMOYOSHI , SHIRAKI YASUHIRO
IPC分类号： H01L33/06 , H01L33/24 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/06 , H01S5/183
摘要： PURPOSE:To modulate the output of emitted light, by applying a specified amount of bias to a means, which excites second semiconductor layers having a large forbidden band width that hold a first semiconductor layer having a small forbidden band width, and changing only a voltage, which is applied on semiconductor multilayer films. CONSTITUTION:When a current is applied between an AuGeNi/Au electrode 15 and a Cr/Au electrode 16, light is emitted from a Ga1-yAlyAs layer 10. The emitted light is absorbed in Ga1-uAluAs layer 2. When a voltage is not applied across the AuGeNi/Au electrodes 14 and 15, electrons, which are produced by the absorption of the light, are recombined in the layers 2 in a non-light emitting mode. When the voltage is applied, carriers drop into GaAs layers 1 and the light is emitted. The light is made to radiate to the outside from the upper surface of the element. Thus the output of the light can be modulated by modulating the voltage, which is applied across the electrodes 14 and 15.

62. 发明专利

JPS6360581A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6360581A
公开(公告)日：1988-03-16
申请号：JP20367986
申请日：1986-09-01
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , YAMASHITA SHIGEO , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To control the half-value width of outgoing beams, and to enable predetermined half-value width by forming the shape of the end surface of a laser oscillator to a curved surface form and setting the radius of curvature of the end surface of the laser oscillator at a proper value in a phased array semiconductor laser. CONSTITUTION:Outgoing-angle half-value width in the direction parallel with the plane of an active layer is determined by the radius of curvature of a wave front on the end surface of laser beams projected from the end surface and spot size. Since a wave front at the time of outgoing from the end surface takes a convex shape on the convex end surface 1, the spreading angle of outgoing beams is made larger than a diffraction spreading angle. Since a wave front at the time of outgoing from the end surface takes a concave shape in the concave end surface 2, the spreading angle of outgoing beams is made larger than the diffraction spreading angle. Accordingly, the end surface is formed to a curved surface shape, thus broadening outgoing beam half-value width in the direction parallel with the active layer in a phased array semiconductor laser, then acquiring Outgoing beams approximating to a round circle.

63. 发明专利

JPS6337684A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6337684A
公开(公告)日：1988-02-18
申请号：JP17991686
申请日：1986-08-01
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , ONO YUICHI , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce a reactive current and provide an oscillation at a low threshold by a method wherein the shape of a ridge is composed of two steps of upper and lower inverse trapezoids and the bottom of the upper trapezoid is made to be smaller than the bottom of the lower trapezoid. CONSTITUTION:A current constriction width is made to be narrower than a waveguide width to reduce a reactive current and, moreover, by providing a complex refractive index difference in the waveguide, the interferability of a laser is reduced to make the laser not influenced by a returned light noise. In other words, a current is constricted in a region A where a light absorbing layer does not exist. Although a region B is also excited by the penetration of the current under the light absorbing layer, very little current spreads as far as the outside of the optical waveguide, i.e. a laser region C. Therefore, a semiconductor laser of the present constitution provides an improved current utilization efficiency and an oscillation at a threshold value as low as 20 mA can be realized.

64. 发明专利

JPS62188390A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS62188390A
公开(公告)日：1987-08-17
申请号：JP2880686
申请日：1986-02-14
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , KAYANE NAOKI , OTOSHI SO , MORIOKA MAKOTO , MISHIMA TOMOYOSHI
IPC分类号： H04B10/60 , B82Y20/00 , H01S5/00 , H01S5/343 , H04B10/00 , H04B10/40 , H04B10/50
摘要： PURPOSE:To obtain a high speed semiconductor laser element capable of performing direct modulation exceeding 10GHz of threshold frequency by a method wherein the barrier layer of the quantum well active layer of the quantum well type laser is doped with high concentration P-type impurities. CONSTITUTION:At a semiconductor laser device having a multiple quantum well active layer formed by piling up alternately a well layer 3 of thickness thinner than de Broglie wavelength of electrons and a barrier layer 4 having forbidden bandwidth larger than that of the well layer 3, the type of conduction of the barrier layer 4 is made to be a P-type. For example, an N-type Ga1-xAlxAs clad layer 2 is grown according to the organic metal vapor growth method on an N-type GaAs substrate 1, and a multiple quantum well construction is grown thereon. The multiple quantum well layer is formed by growing alternately an undoped Ga1-yAlyAs well layer (y=0-0.2, thickness is 3-10nm) 3 and a P-type Ga1-zAlzAs barrier layer (z>y, thickness is 3-20nm) 4 to the 2-10 layers. Then a P-type Ga1-xAlxAs layer 5 and a P-type GaAs layer 6 are grown, a P-side electrode Cr-Au 7 and an N-side electrode AuGeNi-Au 8 are evaporated, and the unit is cut off to obtain a laser element.

65. 发明专利

JPS6261382A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6261382A
公开(公告)日：1987-03-18
申请号：JP19941785
申请日：1985-09-11
申请人： HITACHI LTD
发明人： FUKUZAWA TADASHI , KAYANE NAOKI , NAKATSUKA SHINICHI , SAITO KATSUTOSHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser which is controlled in a lateral mode with longitudinal multimode with excellent beam shape by forming the active region near a laser light outlet as a refractive index waveguide laser and the active region except that as a gain waveguide laser. CONSTITUTION:An N-type Ga0.65Al0.35As clad layer 10, an undoped GaAs/Ga0.5 Al0.5As superlattice laser active layer 11, a P-type Ga0.65Al0.35As clad layer 12 and a P-type GaAs cap layer 13 are sequentially crystalline grown by a molecular beam epitaxial method on a GaAs substrate (N-type) 9. Si ions are implanted to a region 14 with a mask 7, the mask 8 is opened to implant Si ions to a region 15. The region 15 acts as a hole blocking film, and a region 16 is annealed to eliminate superlattice, thereby providing a refractive index smaller than the superlattice.

66. 发明专利

JPS61256782A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61256782A
公开(公告)日：1986-11-14
申请号：JP9776085
申请日：1985-05-10
申请人： HITACHI LTD
发明人： OTOSHI SO , FUKUZAWA TADASHI , UOMI KAZUHISA , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To make low noise property and no-aberration state compatible, in the vicinity of the end surface of a gain waveguide type laser, by introducing impurities until the impurities penetrate through an active layer at both sides of a stripe. CONSTITUTION:On an N-GaAs substrate 1, an N-GaAlAs clad layer 3, an active layer 3 incorporating a quantum well structure, a P-GaAlAs clad layer 4 and an N-GaAs current blocking layer 5 are sequentially grown. Then, Zn is diffused only in the vicinity of the end surface. At this time, the depth of diffusion is set so that Zn penetrates through the layer 3. Ga and Al are mixed in the layer 3, and a disorganized region 9 is formed. A groove 10 is formed by removing a part of the layer 5. Thereafter, a P-GaAlAs embedded layer 6 and an N-GaAs cap layer 7 are formed. Then, Zn is diffused so as to reach the layer 6 in the region other than the vicinity of the end surface, and a Zn diffused region 11 is formed. In this constitution, since refractive index type wave-guiding is provided in the vicinity of the end surface, low noises and no-aberration state can be made compatible.

67. 发明专利

JPS61256781A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61256781A
公开(公告)日：1986-11-14
申请号：JP9775985
申请日：1985-05-10
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , KAYANE NAOKI , NAKATSUKA SHINICHI , OTOSHI SO , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To achieve low aberration, high output and low noises, by setting the concentration of Se of impurities in an N-type GaAlAs clad layer in a quantum well semiconductor laser at a specified value or more. CONSTITUTION:On an N-type GaAlAs substrate crystal 1, an N-type GaAlAs clad layer 2, a multiplex quantum well active layer 3, a P-type GaAlAs clad layer 4 and an N-type GaAs current narrowing layer 5 are sequentially formed. Then, a groove stripe, by which the surface of the layer 4 is exposed, is formed. Thereafter, a P-type GaAs clad layer 6 and a P-type GaAs cap layer 7 are formed. At this time, the impurities in the layer 2 comprise Se, and the concen tration of the impurities is 1X10 (cm ) or more. Under these conditions, the waveguide structure becomes a refractive index waveguide type. Low aberration is obtained, and the lateral mode at the time of high output operation can be stabilized.

68. 发明专利

JPS61253881A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
公开(公告)号：JPS61253881A
公开(公告)日：1986-11-11
申请号：JP9543385
申请日：1985-05-07
申请人： HITACHI LTD
发明人： KANAI MIYO , KAYANE NAOKI , OISHI AKIO , TSUJI SHINJI
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12
摘要： PURPOSE:To enable to regulate the projecting angle of laser projection light, by making the shape of at least one of light projecting end faces a paraboloid or circle including an ellipse. CONSTITUTION:After a mesa is formed, a P-type InP buried layer 7, N-type InP buried layer 8 and P-type InGaAsP cap layer 9 are sequentially grown by liquid phase growing. After a Cr-Au electrode 10 and AuGeNi-Cr-Au electrode 11 are deposited, the section of the end face projection laser light is made curved 12. In this way, by making the shape of the light projecting end face a paraboloid or circle including an ellipse, a lens effect for the laser projecting light at this section can be utilized to reduce the projecting angle. Moreover, by varying the form such as the curvature of the curved section of the light projecting face, the projecting angle can be regulated.

69. 发明专利

JPS61201492A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61201492A
公开(公告)日：1986-09-06
申请号：JP4111585
申请日：1985-03-04
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , KAYANE NAOKI , ONO YUICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To confine particles in a semiconductor in a two-dimensional manner by forming multiple quantum well structure in which quantum well layers consisting of thin-films thinner than the de Broglie wavelength of electrons and barrier layers having forbidden band width wider than the quantum well layers are laminated alternately on a periodical irregular surface tilted to the main surface of a substrate. CONSTITUTION:Structure having a second layer (superlattice structure), which is held between first 2 and third 8 semiconductor layers formed onto a compound semiconductor substrate 1 and a composition thereof periodically changes to fourth 4 and fifth 5 compositions at a period shorter than the de Broglie wavelength of electrons, is shaped, and a section having the structure is exposed at an angle, where 0 is not formed to the surface of the substrate. Fourth 4 or fifth 5 semiconductor layers are etched selectively on the exposed surface 16 of the second layer, thus manufacturing fine periodic structure. Quantum well layers 14 consisting of ultra-thin-film laminated structure having forbidden band width narrower than the fourth and fifth composition semiconductor layers and thinner than the de Broglie wavelength of electrons and layers 15 having forbidden band width wider than the quantum well layers are formed onto the periodic structure.

70. 发明专利

JPS61189502A METHOD AND DEVICE FOR FORMING DIFFRACTION GRATING 失效
公开(公告)号：JPS61189502A
公开(公告)日：1986-08-23
申请号：JP2931085
申请日：1985-02-19
申请人： HITACHI LTD
发明人： TSUJI SHINJI , OKAI MAKOTO , MATSUMURA HIROYOSHI , NAKAMURA HITOSHI , SAKANO SHINJI , HIRAO MOTONAO , KAYANE NAOKI , OISHI AKIO
IPC分类号： G02B5/18
摘要： PURPOSE:To form diffraction gratings which have the same period and are out of phase with each other on the same substrate with good reproducibility by providing an optical path length varying means which varies the phase of light in an adjustable state at least one luminous flux side in luminous flux after splitting. CONSTITUTION:A mechanism for phase adjustment is provided at one of positions 21-23 or to a mirror 142 to obtain the diffraction gratings which has the same grating intervals and are out of phase on the same substrate. This mechanism for phase adjustment employs the rotation of an optical parallel plate 2a which differs in reflective index from an ambient atmosphere, the reflection of a multiple reflecting mirror 2b which moves in parallel, the parallel movement of a prism 2c, or the electrooptic effect of a dielectric 2d. Consequently, the diffraction gratings which has the same period and are out of phase with each other are formed on the same substrate with good reproducibility and a single longitudinal mode laser is obtained with good reproducibility.

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